JAPAN B-CAS CARD Search Results

jeida dram 88 pin

Contextual Info: MEMORY DRAM CARD JllD A * liR Ä M ö ird Guide Line Ver. 2.0] cöMörrnabie 8 DYNAMIC RANDOM ACCESS MEMORY CARD 16 M/32 M - B Y T E DESCRIPTION The MB98B7515 is a DRAM Card 4,194,304 words x 32 bits with eight MB8117400A’s mounted. The MB98B7516 is a DRAM Card (4,194,304 words x 36 bits) viith eight MB8117400A’s and four MB814100A

Contextual Info: FUJITSU January 1994 Edition 1.0 DATA SHEET MB98B7513-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 16 bits / 2M x 32 bits The Fujitsu MB98B7513 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices. This card is capable of storing and

Contextual Info: December 1993 Edition 1.0 FUpSU DATA SHEET M B 9 8 B 7 5 14-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 18 bits / 2M x 36 bits The Fujitsu MB98B7514 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices and eight MB81C1000AL devices.

j2449

Contextual Info: N EW PRODUCT HB56G136CC Series 1,048,576-Word X 36-Bit High Density Dynamic RAM Card 0H IT A C H I Rev.O Ju l. 03, 1992 Description The HB56G136CC is a 1M X 36 dynamic R A M Card, mounted 8 pieces of 4Mbit D RAM HM514900LTT sealed in T SO P package. An outline of the HB56G13GCC is 88-pin two piece connector package.

Contextual Info: January 1994 Edition 1.0 FUJITSU DATA SHEET MB98B7512-80 DRAM MEMORY CARD D Y N A M IC R A N D O M A C C E S S M EM O RY CARD 2M x 18 bits / 1 M x 36 bits The Fujitsu M B98B7512 is a Dynam ic Random Access Memory DRAM card consisting of eight MB814400AL devices and four MB81C1000AL devices. This

SDHC schematic

Abstract: SDIO CARD Layout EVK1104 sdhc atmel AVR32787 EVK1104 ADC SDHC avr write read to mmc sdio mmc connector TPA152
Contextual Info: AVR32801: UC3A3 Schematic Checklist Features • • • • • • • • Power circuit Reset circuit USB connection External bus interface ABDAC sound DAC interface JTAG and Nexus debug ports Clocks and crystal oscillators MMC, SD-card, SDHC, SDIO and CE-ATA interface

D4104

Abstract: nlpin
Contextual Info: iN E m p R O D u m im m m i HB56G132CC- x x S Series 1,048,576-WordX 32-Bit High Density Dynamic RAM Card Rev.l Dec. 08,1992 0 H IT A C H I D escrip tion The IIB56G132CC-X X S is a 1MX 32 dynamic RAM Card, m ounted 8 pieces of 4M bit DRAM HM51S4800ALTT sealed inTSO P package.

Contextual Info: MITSUBISHI LSIs iia m m a c r y Some of contents are subject to change without notice. MH4V645/6445AXJJ-5,-6,-5S,-6S HYPER PAGE MODE 268435456-BIT 4194304-WQRD BY 64-BIT DYNAMIC RAM DESCRIPTION ADDRESS Refresh Row Add. Col Add. This is family of 4194304 - word by 64 - bit dynam ic RAM

Contextual Info: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.

LE57D111TC

Abstract: Le57D11TC PLCC-48 footprint TISP61089
Contextual Info: P R E L I M I N A R Y Dual SLIC Dual Subscriber Line Interface Circuit Le57D11 Device APPLICATIONS


DESCRIPTION Ideal for low cost, high performance line card applications CO, DLC Meets requirements for countries such as: China, Korea, Japan, Taiwan, and Australia

EBJ17RG4EFWP-GN-F

Abstract: EBJ17RG4EFWP
Contextual Info: COVER DATA SHEET 16GB Registered DDR3L SDRAM DIMM EBJ17RG4EFWD EBJ17RG4EFWP 2048M words 72 bits, 2 Ranks Specifications Features • Density: 16GB • Organization — 2048M words  72 bits, 2 ranks • Mounting 36 pieces of 4G bits DDR3L SDRAM sealed

EBJ81RF4EDWP-GN-F

Abstract: Elpida Memory
Contextual Info: COVER DATA SHEET 8GB Registered DDR3L SDRAM DIMM EBJ81RF4EDWD EBJ81RF4EDWP 1024M words 72 bits, 2 Ranks Specifications Features • Density: 8GB • Organization — 1024M words  72 bits, 2 ranks • Mounting 36 pieces of 2G bits DDR3L SDRAM sealed

mitsubishi year code

Contextual Info: MITSUBISHI LSIs KÄ-atr- MH8V7245BWZTJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245BWZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8

Contextual Info: COVER PRELIMINARY DATA SHEET 4GB Unbuffered DDR3L SDRAM DIMM EBJ40EG8EFWA 512M words  72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3L SDRAM sealed in FBGA

capacitor 56J pF

Contextual Info: MOTOROLA Order this document by 3VEDOB72D~ SEMICONbUCTOR TECHNICAL DATA — lM x72 DRAM Dual-In-Line Memory Module DIMM 3.3 V, EDO, Buffered For Error Correction Code Applications 8 Megab~e JEDEGStandard 168–Lead Dual-In-tine Single 3.3 V Power Supply, LWL<ompatible

Micron 48LC8M16

Abstract: PCI08-DK sam9708 48lc8m16 PCI08-DK sam9708 RAS13-CAS9 MIDI SAM9708 k335 WD-065 ATSAM9708
Contextual Info: Features • One Audio ADC • • • • • – Burr-Brown PCM1800 20bit 95dB SNR Two Audio DACs – Burr-Brown PCM1739 (24bit 105dB SNR) 128Mbit SDRAM – Micron® 48LC8M16 (8M x 16) FPGA for PCI management – XILINX® XCS30XL DIMM socket for SDRAM expansion up to 256 MB

EDJ4208BBBG-DJ-F

Abstract: EDJ4208BBBG-GN-F EDJ4208BBBG EDJ4204BBBG EBJ81UG8BBU0 E1800E
Contextual Info: DATA SHEET 8GB DDR3 SDRAM SO-DIMM EBJ81UG8BBU0 1024M words x 64 bits, 2 Ranks Specifications Features • Density: 8GB • Organization  1024M words × 64 bits, 2 ranks • Mounting 16 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual

IDQ25186

Abstract: MA721 VSS1641NC IMX72 Li-49 39NC60 motorola bq50
Contextual Info: Order ttis document by 5VFPMB72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1Mx72 DRAM Dual-In-Line Memory Module DIMM 5 V, FPM, Buffered For Error Correction Code Applications 8 Megabyte . JEDEC–Standard ● Single 5 V Power Supply, ~L_Compatible ● Fast Page Mode (FPM)

EDJ2108BCSE-DJ-F

Abstract: EDJ2108BCSE-DJ-F rev C udimm 2g EbJ20ef8bcfa-dj-f Elpida DDR3 manual
Contextual Info: DATA SHEET 2GB Unbuffered DDR3 SDRAM DIMM EBJ20EF8BCFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 1 rank • Mounting 9 pieces of 2G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

Contextual Info: COVER DATA SHEET 4GB Unbuffered DDR3 SDRAM DIMM EBJ40EG8BFWB 512M words x 72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words × 72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory

Contextual Info: COVER DATA SHEET 8GB Unbuffered DDR3 SDRAM DIMM EBJ81EG8BFWB 1024M words  72 bits, 2 Ranks Specifications Features • Density: 8GB • Organization — 1024M words  72 bits, 2 ranks • Mounting 18 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory

ELPIDA DDR3L

Contextual Info: COVER DATA SHEET 4GB DDR3L SDRAM SO-DIMM EBJ40UG8EFU0 512M words  64 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  64 bits, 1 rank • Mounting 8 pieces of 4G bits DDR3L SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in-line

Contextual Info: COVER PRELIMINARY DATA SHEET 8GB DDR3L SDRAM SO-DIMM EBJ81EG8EFUA 1024M words  72 bits, 2 Ranks Specifications Features • Density: 8GB • Organization — 1024M words  72 bits, 2 ranks • Mounting 18 pieces of 4G bits DDR3L SDRAM sealed in FBGA

EBJ40UG8EFU0

Abstract: EBJ40UG8EFU0-GN-F
Contextual Info: COVER PRELIMINARY DATA SHEET 4GB DDR3L SDRAM SO-DIMM EBJ40UG8EFU0 512M words  64 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  64 bits, 1 rank • Mounting 8 pieces of 4G bits DDR3L SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in-line