JAPAN LOW NOISE TRANSISTORS Search Results

EEFCX0D221R

Contextual Info: Specialty Polymer Aluminum Electrolytic Chip Capacitors SP–Cap / CX Surface Mount Type Series: CX •Features Japan Excellent Noise-absorbent Characteristics ■ Low profile type (2.0mm Height) ■ Pb free ■ 260ºC reflow ■ ■Specification Operating Temp. Range

transistor motorola 351

Abstract: MRFIC1808 MRFIC1808DMR2 2C46
Contextual Info: Order this document by MRFIC1808/D MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT), Japan’s Personal Handy System (PHS) and the emerging North American

Contextual Info: MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT), Japan’s Personal Handy System (PHS) and the emerging North American systems as a preamp for discrete or integrated downmixers. The

Nec K 872

Abstract: uPC1652 transistor NEC D 586 uPC1658C IC 14511 NEC D 586 PC1658C PC1658G UPC1652G TRANSISTOR K 1507
Contextual Info: Application Note Silicon Low-Noise High-Frequency Amplifier IC Usage of µPC1658G Document No. P10965EJ5V0AN00 5th edition Date Published January 2000 N CP(K) Printed in Japan 1996, 2000 [MEMO] 2 Application Note P10965EJ5V0AN00 The information in this document is subject to change without notice.

uPC1658C

Abstract: uPC1658 uPC1656 1568G uPC1652 pc1658 uPC1658A 80 nf 100 1658C pc1658C
Contextual Info: Application Note LOW-NOISE HIGH-FREQUENCY AMPLIFIERS µPC1658A µPC1658C µPC1658G Document No. P10965EJ3V0AN00 3rd edition Date Published November 1999 N CP(K) Printed in Japan 1996, 1999 [MEMO] 2 Application Note P10965EJ3V0AN00 • The information in this document is subject to change without notice. Before using this document, please

MRF549

Abstract: MRF5711 MRF579 MRF9411 MRF949 MRF9511 MRF959
Contextual Info: Order this document by MRF959IB/D Information Brief New Versions of Three Popular Low-Noise Motorola RF Transistors Will Enable Design Shrinks . . . Has 42% smaller footprint area The new MRF949, MRF959 and MRF579 are re-packaged versions of the popular MRF9411, MRF9511 and MRF5711 silicon NPN RF transistors. The newer

SOT 143 footprint

Abstract: MRF5711 MRF5711 equivalent 602 SOT MRF9511 equivalent MRF9411 MRF949 MRF959 MRF579 MRF9511
Contextual Info: Order this document by MRF579IB/D Information Brief New Versions of Three Popular Low-Noise Motorola RF Transistors Will Enable Design Shrinks . . . Has 42% smaller footprint area The new MRF949, MRF959 and MRF579 are re-packaged versions of the popular MRF9411, MRF9511 and MRF5711 silicon NPN RF transistors. The newer

mrf9411

Abstract: MRF579 low noise transistors rf mrf571 MRF5711 equivalent SOT 143 footprint MRF5711 MRF949 MRF9511 MRF959
Contextual Info: Order this document by MRF949IB/D Information Brief New Versions of Three Popular Low-Noise Motorola RF Transistors Will Enable Design Shrinks . . . Has 42% smaller footprint area The new MRF949, MRF959 and MRF579 are re-packaged versions of the popular MRF9411, MRF9511 and MRF5711 silicon NPN RF transistors. The newer

MRF5711

Abstract: MRF579 MRF9411 MRF949 MRF9511 MRF959
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF949IB/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Information Brief New Versions of Three Popular Low-Noise Motorola RF Transistors Will Enable Design Shrinks . . . Has 42% smaller footprint area

MRF549

Abstract: MRF579 MRF959 MRF5711 MRF9411 MRF949 MRF9511 SOT 143 footprint
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF959IB/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Information Brief New Versions of Three Popular Low-Noise Motorola RF Transistors Will Enable Design Shrinks . . . Has 42% smaller footprint area

a2073

Abstract: 2SA2073 Transistor 2sa2073 2SC5826
Contextual Info: 2SA2073 Transistors High voltage discharge, High speed switching, Low Noise −60V, −3A 2SA2073 zDimensions (Unit : mm) ATV 0.5 4.4 0.9 1.0 0.65Max. (1) (2) (3) 2.54 2.54 (1) Emitter (2) Collector (3) Base zApplications High speed switching, Low noise

2SA2092

Abstract: 2SC5865 2SA20
Contextual Info: 2SC5865 Transistors High voltage discharge, High speed switching, Low Noise 60V, 1A 2SC5865 zApplications High speed switching, Low noise zDimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 0~0.1 0.3~0.6 zFeatures 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A)

A2072

Abstract: 2SC5825 2SA2072 A207-2 Japan Low Noise Transistors
Contextual Info: 2SA2072 Transistors High voltage discharge, High speed switching, Low Noise −60V, −3A 2SA2072 zExternal dimensions (Unit : mm) 6.5 5.1 CPT3 (SC-63) <SOT-428> 2.3 2.5 0.65 0.9 (2) Collector (1) 2.3 (2) (3) 2.3 (3) Emitter 0.8Min. 0.75 (1) Base zApplications

LP1001

Abstract: LP1001A
Contextual Info: MOTOROLA Order this document by LP1001/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors LP1001 LP1001A The LP1001 is designed for CATV and other Broadband linear applications. This Motorola series of small–signal plastic transistors offers superior quality

MRF5711LT1

Abstract: MMBR571LT1 MRF571 11608A ZO 103 MA 75 603
Contextual Info: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This

LM833

Abstract: LM833DR2 lm833 equivalent LM833D LM833N MC33079
Contextual Info: LM833 Dual Low Noise, Audio Amplifier The LM833 is a standard low–cost monolithic dual general–purpose operational amplifier employing Bipolar technology with innovative high–performance concepts for audio systems applications. With high frequency PNP transistors, the LM833 offers low voltage noise

2SC3837K

Abstract: T108 marking X4 UMX4N
Contextual Info: EMX4 / UMX4N / IMX4 Transistors High transition frequency dual transistors EMX4 / UMX4N / IMX4 zExternal dimensions (Unit : mm) zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF)

ic 710

Abstract: BA6809F BA6819AF
Contextual Info: Motor driver ICs 2-phase half-wave motor driver BA6809F / BA6819AF The BA6809F and BA6819AF are motor drivers designed for 3V and 5V fan motors. Built-in output transistors reduce the number of external components required. The ICs have an alarm output pin BA6809F and Hall output pin

MMBT5088

Abstract: MMBT5088LT1 MMBT5088LT1G MMBT5089 MMBT5089LT1 MMBT5089LT1G
Contextual Info: MMBT5088LT1, MMBT5089LT1 MMBT5089LT1 is a Preferred Device Low Noise Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBT5088 MMBT5089

IC built-in 2-phase FAN motor

Abstract: BA6407AF Audio Circuit with IC 701 3 pin 12V Hall IC Fan Driver
Contextual Info: Motor driver ICs 2-phase half-wave motor driver BA6407AF The BA6407AF is a motor driver dedicated to 12V fan motors. Built-in output transistors reduce the number of external components required. The IC has a lock signal output pin. FApplications Fan motors

Contextual Info: MBT6429DW1T1 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol 6429DW1T1 Unit Collector - Emitter Voltage VCEO 45 Vdc Collector - Base Voltage VCBO 55 Vdc Emitter - Base Voltage VEBO 6.0 Vdc IC 200 mAdc Characteristic Symbol Max Unit Total Device Dissipation Note 1

MMBT5088

Abstract: MMBT5088LT1 MMBT5089 MMBT5089LT1
Contextual Info: ON Semiconductort MMBT5088LT1 MMBT5089LT1 Low Noise Transistors NPN Silicon MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating 1 Symbol 5088LT1 5089LT1 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage

Contextual Info: MOTOROLA Order this document by CA901/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF CATV Amplifiers CA901 Designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold metal system.

motorola 7673 A

Abstract: MRF957 MMBR951 MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 sot-23 marking 7z Motorola 8039
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Order this document by MMBR951/D MMBR951 MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.