JAPANESE FET Search Results

128 half-size alphanumeric characters and symbols

Abstract: KSD 302 KSD1 140 4027 ram KSD 303 7 segment display 2003 cc ksd 302 transistor KSD1 105 TRANSISTOR c 5578 B KSD1 65
Contextual Info: HD66732 Graphics Liquid Crystal Display Controller/Driver Supporting JIS Level-1 and Level-2 Kanji ROM Rev 1.0 Jun. 1st, 1998 Description The HD66732 is a dot-matrix liquid crystal display (LCD) controller and driver LSI that displays 11-by-12 dot Japanese characters consisting of kanji and hiragana according to the Japanese Industrial Standard (JIS)

smd diode marking code t056

Abstract: xf075 xf017 tyco igbt module 25A Thermistor PTC 265V* xf017 XF090 raychem* XF090 xf065 PolySwitch Resettable Devices xf250 PTC XF010
Contextual Info: Circuit Protection Business Unit Headquarters 308 Constitution Drive, Building H Menlo Park, CA USA 94025-1164 Tel : 800 227-7040, (650) 361-6900 Fax : (650) 361-4600 www.circuitprotection.com www.circuitprotection.com.hk (Chinese) www.tycoelectronics.com/japan/raychem (Japanese)

3F smd transistor

Abstract: transistor smd 3E smd transistor 3F transistor SMD g 28 smd transistor 3g smd transistor c6 15 TRANSISTOR SMD CODE 6.8 L5 smd transistor transistor smd list smd transistor 68 p
Contextual Info: APPLICATIONS DISCRETE SEMICONDUCTORS Michael Mauer ● Matthias Öttl Power amplifiers for Japanese mobile phone system: Discretes make handies lighter This year, the Personal Handy System PHS , a new local mobile telephone system operating in the 1.9 GHz band, will go into

nec book

Abstract: transister relay book NEC RELAY
Contextual Info: NEC Semiconductor Data Book List NEC Semiconductor Data Book CD-ROM List April 1999 Following is the list of the Semiconductor Data Books NEC has published. If you need a copy, please ask our sales representative. Title / Items Memory (English / Japanese)

high power fet amplifier schematic

Abstract: schematics for a PA amplifier REP006 TRANSMIT CUSTOM DIODE ucc quasi resonant full bridge AN449 APP449 MAX2269 tdma abstract
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: REP, REP006, rapid engineering prototype, J-CDMA, JCDMA, japanese CDMA, PA, linear RF, power amplifier, PAE, efficiency, power added efficiency Nov 01, 2000 APPLICATION NOTE 449 REP006: Linear RF Power Amplifier Matched for High Efficiency at

Contextual Info: Taping - SC-76 SSP Page 1 of 2 [NEC Corporation] Discrete Device Taping Specification What's FET SC-76 (SSP) There are two types (-T1, -T2) of taping depending on the direction of the device. Bipolar Diode -T1, -T2 Japanese Devices are taped in the direction as shown in the figure above, 3000 devices are wound on

Contextual Info: AT86RF212B Features • Fully integrated 769 – 935MHz transceiver including: - Chinese WPAN band from 779 to 787MHz - European SRD band from 863 to 870MHz - North American ISM band from 902 to 928MHz - Japanese band from 915 to 930MHz • Direct Sequence Spread Spectrum with different modulation and data rates:

748431090

Abstract: AT86RF212B CBC 184 transistor AT86RF212B-ZU Siward A207-011 0915L
Contextual Info: AT86RF212B Features • Fully integrated 769 – 935MHz transceiver including: - Chinese WPAN band from 779 to 787MHz - European SRD band from 863 to 870MHz - North American ISM band from 902 to 928MHz - Japanese band from 915 to 930MHz • Direct Sequence Spread Spectrum with different modulation and data rates:

Contextual Info: /IPD75P3216 NEC m b427525 GGÖÖS3Ö 3T4 [MEMO] MS-DOS is a trademark of Microsoft Corporation. IBM DOS, PC/AT, and PC DOS are trademarks of IBM Corporation. The export of this product from Japan is regulated by the Japanese governm ent To export this product may be prohibited

RH A4 2A 250V

Contextual Info: 108-5118 Rev. J1 Product Specification K A £ tt AMP E l Series Connector (AMP EI Following first 10 pages are En g lish version and last 9 pages are Jap an ese version. This top sheet is not p art of the specification but explains both of E n g lish and Japanese

transistor 669A

Abstract: 669A 2SD350A 2SB646A 2SB748A h 669A 2SB546A 2SB547A 2SB566A 2SB647A
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

MIP172

Abstract: MIP173 MIP175 MIP170 MIP9E mip02 MIP814
Contextual Info: Intelligent Power Devices IPDs MIP170, MIP172, MIP173, MIP174, MIP175, MIP176 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)

MIP0222

Abstract: mip0223 MIP0221SP MIP0222SP mip0221 MIP0223SP MIP9E 0224S MIP0223S mip0224
Contextual Info: Intelligent Power Devices IPDs MIP0221SP, MIP0222SP, MIP0223SP, MIP0224SP Silicon MOS IC • Features ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.

MIP161

Abstract: MIP16 mip161 application MIP18 mip3
Contextual Info: Intelligent Power Devices IPDs MIP161 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● An over voltage protection circuit for the secondary side, a pulseby-pulse overcurrent protection circuit and a timer auto-restart circuit are integrated.

MIP0102SY

Abstract: MIP0101SY MIP*0104SY MIP0104SY MIP9E MIP0101 MIP0100SY IPD Converter MIP2 MIP814
Contextual Info: Intelligent Power Devices IPDs MIP0100SY, MIP0101SY, MIP0102SY, MIP0103SY, MIP0104SY Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● An over voltage protection circuit for the secondary side, a pulseby-pulse overcurrent protection circuit and a timer auto-restart circuit are integrated.

MIP0210SY

Abstract: mip0210 MIP16
Contextual Info: Intelligent Power Devices IPDs MIP0210SY Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)

DS1125

Abstract: MOSFET MARKING 3F XN0NE92 FET MARKING
Contextual Info: Composite Transistors XN0NE92 Silicon P-channel MOSFET FET Silicon epitaxial planar type (SBD) Unit: mm 2 10˚ (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 SBD Rating Unit VDSS −12 V VGSS ±15 V Drain current ID −1.2 A Peak drain current IDP −3 A Total power dissipation *

MIP2L50MY

Abstract: TO-220-A2 mip2e mip9l MIP2L5MY MIP2L MIP816 marking aef 3Exx MIP2 panasonic
Contextual Info: MIP2L50MY Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3Exx series to dramatically reduce the average noise and simplify EMI parts.  ILIMIT input correction function to reduce input voltage dependency of

mip160

Abstract: MIP162 mip163 MIP164 MIP166 MIP2 MIP165 mip*163 MIP9E
Contextual Info: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)

MIP53

Abstract: MIP9L marking aef mip2e MIP2L5MY MIP2L50MY MIP2 ipd mip4
Contextual Info: MIP2L50MY Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3Exx series to dramatically reduce the average noise and simplify EMI parts.  ILIMIT input correction function to reduce input voltage dependency of