JB SOT23 Search Results

BAL74

Abstract: SOT23 BAL74 BAR74 sot23 jb DSA003668 50V 0.2uF 02uF
Contextual Info: SOT23 HIGH SPEED SWITCHING DIODES BAL74 BAR74 BAL74 BAR74 ISSUE 3 – FEBRUARY 1997 PIN CONFIGURATION Circuit For Measuring Switching Time IF=10mA ! 0mA Irr VIN VOUT IR=10mA 1kΩ PARTMARKING DETAILS BAL74 – JC BAR74 – JB 0.1µF  +11V Trr2 2 1 0.2µF BAL74

BAR74

Contextual Info: SIEMENS Silicon Switching Diode BAR 74 • For high-speed switching Type Marking Ordering Code tape and reel B A R 74 JB s Q62702-F704 Pin Configuration Package1) SOT-23 °-^ -O 1 EKA07003 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

Contextual Info: JB’SfSSfe VNDS06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • 2N7000, VN0610LL, VN2222LL Single TO-237 • VN2222LM Single SOT-23 • VN0605T, 2N7002 Quad 14-Pin Plastic • VQ1000J Quad 14-Pin Dual-ln-Line • VQ1000P Quad

824022

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to

C5440

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824001 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to

SOT23-6L Marking Code

Abstract: WE-TVS
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824013 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2012-02-22 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to

WE-TVS 824011

Abstract: WE-TVS W11XY
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824011 TVS Diode Array WE-TVS SOT23-5L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 high-speed I/O channels and VDD • Provide ESD protection for each channel to

824022

Abstract: WE-TVS W22XY sot23 marking JB tlp 8a dut79
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to

WE-TVS 824015

Abstract: SOT23-6L Marking Code
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824015 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824014 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to

WE-TVS

Abstract: 824021 74638 marking JB sot23 wetvs
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional

335NV

Abstract: marking A0L 5pin
Contextual Info: I B U R R -B R O W N 1 OPA 642 Wideband, Low Distortion, Low Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: -95dBc at 5MHz • GAIN OF +1 BANDWIDTH: 400MHz • ADC/DAC BUFFER AMPLIFIER • LOW DISTORTION IF AMPLIFIER • AVAILABLE IN SOT23-5 PACKAGE

JB marking transistor

Abstract: transistor marking 3em transistor marking JB MMBTH10 J JB transistor marking 3EM sot-23 C40 SOT23
Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value

Contextual Info: B U R R - BR O W N c [ DCP0105 Series ] Miniature 5V Input, 1W Isolated UNREGULATED DC/DC CONVERTERS FEATURES DESCRIPTION • STANDARD JEDEC PLASTIC PACKAGE The DCP0105 fam ily is a series o f high efficiency, 5V input isolated D C /D C converters. In addition to 1W

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL P M O S FET ISSUE 3 - JANUARY 1996 BSS123 O PARTM ARKING DETAIL - SA DH I SOT23 ABSOLUTE MAXIM UM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Drain-Gate Voltage VALUE UNIT VDs 100 V V dgr 100 V Continuous Drain Current at Tamtj=25°C

MMBTH10

Abstract: MPSH10 MPSH11 sot23 jb jb transistor
Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Ptot 200 mW 1.8 mW / OC Total Device Dissipation FR-5 Board

MMBTH10LT1

Abstract: MPSH10 MPSH11 jb transistor GFB30 MPSH10 S parameters
Contextual Info: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C

MPSH10 s parameters

Abstract: MMBTH10LT1 MPSH10 MPSH11
Contextual Info: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

LMBTH10QLT1

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10PLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 20 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23