JE 800 TRANSISTOR Search Results

npn 222

Abstract: 251bf "AGC Amplifier" AM "AGC Amplifier" AM FM radio AM/FM bf 233 BF222 agc amplifier F VHF amplifier
Contextual Info: CONSUMER TRANSISTORS continued o Q. > i> 0 CL Li] CD >~ < O ÜJ ÜJ JE > > U. o _c s> 0) > X o L» CM II I- rsi X ¡2 ro 1- P A CKAG E cc < NF (dB) h PG (dB) > DESCRIPTIO N TYPE RF amplifiers-mixer/oscillators 3 _E □ o_ 800 200 600 TO-72 6.5 800 175 550 TO-72

702 y TRANSISTOR

Abstract: JE701 JE700 702 P TRANSISTOR je 701
Contextual Info: r n r e n i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic

2N2772

Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
Contextual Info: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT

BUF600

Contextual Info: JR W -B R O W N BUF600/601 Or, Call Customer Servite al 1-800-548-6132 USA Only BUF600/601 OPERATIONAL AMPLIFIERS Q ADVANCE INFORMATION SU B JE C T TO CHANGE HIGH-SPEED BUFFER AMPLIFIER FEATURES APPLICATIONS • OUTSTANDING AC-PERFORMANCE • VIDEO BUFFER/LINE DRIVER

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only i ADVANCED INFORMATION S U B JE C T TO CH ANCE FEATU R ES Q Wideband Voltage Feedback OPERATIONAL AMPLIFIER APPLICATIONS • GAIN-BANDWIDTH: 1.6GHz • COMMUNICATIONS • S T A B L E IN GAINS > 2 • MEDICAL IMAGING

2SA988

Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
Contextual Info: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )

BA 5982

Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X

AC128 transistor

Abstract: bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 AC187
Contextual Info: Transistors germanium low/medium power transistors Dwg. ref. O utline •b z -0 ?î book 1 parts 1 and 2 V CBO V V ceo (V) M axim um Ratings lCM IC(AV) (A ) (A) Ptot at 25PC (°C> <mW) Tj m in. at •c fT ty p . (m A i (MHz) 2.5 h FE max. Special Features

Contextual Info: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz

200D-100

Abstract: 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v
Contextual Info: _ _ - _ 2-Pack BJT 2DI200D-100 '» A * I Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Voltage t 7 ' J “ 7h>f U > *f ¥ 4 KrtJSt Including Free Wheeling Diode • ASO Excellent Safe Operating Area • Insulated Type I A p p licatio n s

BCX33

Abstract: BCX32 BCX31 BCX34 BFQ36 2N1711 Data Sheet BC337 BC338 BFX84 BFX85
Contextual Info: Transistors N-P-N silicon low/medium power transistors book 1 parts 1 and 2 cont. Type No. V c □ O o> ^ Ï o M axim um Ratings Icm I cjavi vceo V ceo (V) (V ) (A) (A) hpE Ptot m in. max. at 25°C <°C) (mW) 50 45 1.0 0.5 150 625 100 30 25 150 730 Ti fT

nf016

Abstract: MA4TF50 gs 069 0605
Contextual Info: an A M P com pany General Purpose 0.5 |jm N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features • • • • • Low Noise Figure High Associated Gain High Maximum Available Gain Designed for Battery Operation Useful to Ku-Band Description

ST 80500 transistor

Abstract: ST 80500 LB 11911 ST 9727 74200 MARKING AG1 NE687 ka 2201 323 IK 9094 cd 9094
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES_ • LOW NOISE: 1.3 dB AT 2.0 GHz 4 fr • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SO T 343 ST Y LE 19(3 PIN ULTRA S U P E R

JE800

Abstract: JE702 mje800 JE700
Contextual Info: f Z 7 SCS-THOMSON ^ 7 # fifflD æ m iC T «! S_G MJ E800/1 /2/3 MJE700/1/2/3 S-TH O M S O N 3GE ]> MEDIUM POWER DARLINGTONS D ESCRIPTIO N The MJE800, MJE801, MJE802 and MJE803 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun­

Contextual Info: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS

Pa75ha

Abstract: upa75 UPA75HA UPA75H 3773 P T108 T460 5551 transistor jsw15
Contextual Info: NEC j í í t / V T jK ÎM 'ê r h =7 > > * 9 C om poun d Transistor J ¿¿PA75HA PN Px ¥ 9 'J n PNP Silicon Epitaxial C om pound T ransistor D ifferential A m p lifie r 4$ di:/F E A T U R E S O 1 c h i p t f i t T ' i , ^ tztb, l ' ' 7 > X l : { , | | L

t636

Abstract: 557 sot143 T636 A S 223 858 015 636
Contextual Info: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

transistor bc557

Abstract: transistor BC558 base collector emitter BC546 BC548 BC556 BC557 BC558 DS21
Contextual Info: BC556 - BC558 VISHAY PNP EPITAXIAL PLANAR TRANSISTORS LITEMZI y POWER SEMICONDUCTOR Features Ideal for Switching and AF Amplifier Applications Divided into Current Gain subgroups Complementary NPN Types Available BC546 thru BC548 TO-92 Dim Min Max A 4.45

uPA77HA

Abstract: upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460
Contextual Info: NEC A. l i T / \ m .'g - h Com pound Transisitor ' i 7 ¿¿PA77HA PNP h = 7 > i> 7 ,5 U f c Jl& jg S & Jif liffl PNP Silicon Epitaxial Compound Transistor Differential Amplifier ^ 0 / P A C K A G E D IM ENSIONS Unit: mm ^ / F E A T U R E S 01 chip nm.'chhtztb, ^ r i 4 ( j v b e = 2 mv t y p . ) ^ c ,

MJE520

Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic

Contextual Info: Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

Contextual Info: Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.

Contextual Info: Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.