JEDEC MO-187 VARIATION DA Search Results

ansi-y14.5m-1994

Abstract: MO-187
Contextual Info: Package Information Vishay Siliconix MSOP: 8-LEADS POWER IC ONLY JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 N N-1 A B C 0.20 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 0.50 1 2 0.60 N/2 0.08 M C B S b Top View A S

5922

Abstract: 72817 ansi-y14.5m-1994 MO-187 JEDEC MO-187 aa MO-187-AA Package
Contextual Info: Package Information Vishay Siliconix MSOP: 10-LEADS POWER IC ONLY JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 N N-1 A B C 0.20 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 0.50 1 2 0.60 N/2 0.08 M C B S b Top View

5867

Abstract: 71244 ansi-y14.5m-1994 MO-187 JEDEC MO-187 ba JEDEC MO-187 Variation BA mo187 MO-187-AA Package
Contextual Info: Package Information Vishay Siliconix MSOP: 8−LEADS JEDEC Part Number: MO-187, Variation AA and BA (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating

ansi-y14.5m-1994

Abstract: MO-187 10-LEADS JEDEC MO-187 Variation BA B.A BSc
Contextual Info: Package Information Vishay Siliconix MSOP: 10−LEADS JEDEC Part Number: MO-187, Variation AA and BA (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating

MO-187

Abstract: R005 JEDEC MO-187
Contextual Info: R E V I S I O N S REV A D E S C R 1P T I O N RELEASE TO DOC U ME NT E.C. M . DATE BY/APP'D 1262 11/18/2003 H R//TLSN CONTROL [ 1 . 85] 8X .040 — [ 1.02] ( 8X .016 ) [ 0 . 41] ( 6X .026 ) [0.65] RECOMMENDED LAND PATTERN NOTES: UNLESS OTHERWI SE SPECIFIED

Contextual Info: Revised February 1999 E M IC O N D U C T G R T M General Description The 74HC423A high speed monostable multivibrators one shots utilize advanced silicon-gate CMOS technology. They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power and high noise

CX20187

Abstract: MM74HC423AM 74hc423a 74HC M16A M16D MM74HC423A MM74HC423AMTC MM74HC423ASJ MTC16
Contextual Info: Revised February 1999 E M IC O N D U C T G R T M General Description T he 7 4H C 423A high speed m onostable m ultivibrators one shots utilize advanced silicon-gate C M O S technology. T h e y feature speeds com parable to low pow er Schottky T T L circuitry w hile retaining the low pow er and high noise

74hc123a

Contextual Info: September 1983 Revised February 1999 E M IC O N D U C T G R T M General Description The MM74HC123A high speed monostable multivibrators one shots utilize advanced silicon-gate CMOS technol­ ogy. They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power and high

74HC

Abstract: M16A M16D MM74HC123A MM74HC123AM MM74HC123AMTC MM74HC123ASJ MTC16
Contextual Info: Revised February 1999 E M IC O N D U C T G R T M General Description T he M M 74H C 123A high speed m onostable m ultivibrators one shots utilize advanced silicon-gate C M O S te ch n ol­ ogy. T h e y feature speeds com parable to low pow er Schottky TTL circuitry w hile retaining the low pow er and high

D006 CMD

Abstract: DN006 15KV IEC1000-4-2
Contextual Info: PAC DN006 CALIFORNIAMICRO MICRODEVICES DEVICES CALIFORNIA 6 CHANNEL ESD PROTECTION ARRAY Features • Six channels of ESD protection • 15KV ESD protection HBM • 8KV contact, 15KV air ESD protection per IEC 1000-4-2 • Low loading capacitance, 3 pF typ.

TLV2252

Abstract: TLV2252AID TLV2254 TLV2432 TLV2442
Contextual Info: TLV225x, TLV225xA Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS SLOS185C – FEBRUARY 1997 – REVISED – MARCH 2001 D D D D D D Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ

MT5VDDT872HG-26A

Abstract: PC2100
Contextual Info: ADVANCE‡ 64MB, 128MB x72 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT5VDDT872H, MT5VDDT1672H For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES • JEDEC standard 200-pin, small-outline, dual inline memory module (DDR SODIMM)

Contextual Info: 64MB, 128MB x64 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT4VDDT864H (64MB) MT4VDDT1664H (128MB) For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM (MO 224) • JEDEC standard 200-pin, small-outline, dual inline memory module (DDR SODIMM)

Contextual Info: 64MB, 128MB x64 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT4VDDT864H (64MB) MT4VDDT1664H (128MB) For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM (MO 224) • JEDEC standard 200-pin, small-outline, dual inline memory module (DDR SODIMM)

Contextual Info: 0: 30 PM PM8355 QuadPHY II Datasheet Released Mo nd ay ,0 QuadPHY® II 9M ay ,2 00 5 11 :3 PM8355 d of ag er rt on Four Channel 2.125-3.125 Gbits/s SERDES by sa tis h Datasheet Do wn lo ad ed Proprietary and Confidential Released Issue 7: June 2003 Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use

Contextual Info: 9: 07 PM PM8355 QuadPHY II Datasheet Released ug Mo nd ay ,0 1A QuadPHY® II us t, 20 05 10 :1 PM8355 rtm in er In co n Four Channel 2.125-3.125 Gbits/s SERDES Proprietary and Confidential Released Issue 8: July 2005 Do wn lo ad ed by C on te n tT ea m of

74HC123AN

Abstract: 74HC123AM 74HC123A
Contextual Info: A I R C H S eptem ber 1983 I L D Revised February 1999 S E M IC O N D U C T O R TM General Description p u t p u ls e e q u a tio n is s im p ly : P W = R e x t ( ^ e x t ) ! w h e re The M M 74H C 123A high speed m onostable m ultivibrators (one shots) utilize advanced silicon-gate C M OS te ch n ol­

Contextual Info: 128MB, 256MB, 512MB, 1GB x72 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT9VDDT1672PH, MT9VDDT3272PH, MT18VDDT6472PH, MT9VDDT6472PH, MT18VDDT12872PH For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES

MT9VDDT1672PHG-265

Abstract: PC2100 MA-405 6571
Contextual Info: 128MB, 256MB, 512MB, 1GB x72 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT9VDDT1672PH, MT9VDDT3272PH, MT18VDDT6472PH, MT9VDDT6472PH, MT18VDDT12872PH For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES

Contextual Info: Mo nd ay ,1 MSP2204 3M ar ch ,2 00 6 10 :1 3: 34 PM MSP2204 Data Sheet Advance rtm in er In co n Multiservice Processor Advance Issue No. 1: January 2006 Do wn l oa de d by C on te nt T ea m of Pa Data Sheet Proprietary and Confidential to PMC-Sierra, Inc., and for its customers’ internal use.

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

Contextual Info: ST72321B 64/44-pin 8-bit MCU with 32 to 60K Flash/ROM, ADC, five timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 32K to 60K dual voltage High Density Flash HDFlash or ROM with read-out protection capability. In-Application Programming and

log sr2 1234

Abstract: ST7232x
Contextual Info: ST72321B 64/44-pin 8-bit MCU with 32 to 60K Flash/ROM, ADC, five timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 32K to 60K dual voltage High Density Flash HDFlash or ROM with read-out protection capability. In-Application Programming and

Contextual Info: ST72321B 64/44-pin 8-bit MCU with 32 to 60K Flash/ROM, ADC, five timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 32K to 60K dual voltage High Density Flash HDFlash or ROM with read-out protection capability. In-Application Programming and