JEDEC MS-026 FOOTPRINT Search Results

jedec MS-026 ABA footprint

Abstract: jedec MS-026 ABA JEDEC MS-026 footprint JEDEC MS-026 ABD HD JEDEC MS-026 ABC N1287 2N176 1141-1 BD-BH HD7x
Contextual Info: i 0 .2 5 GAUGE PLANE 1 FIG 2 SECTION A - A FIGURE 3 SECTION B - B JEDEC SOLID STATE PRODUCT OUTLINES TITLE LOW/THIN PROFILE PLASTIC QUAD FLAT PACKAGE, 2.00 mm FOOTPRINT. OPTIONAL HEAT SLUG ISSU E D ATE C 2 /9 9 PAGE MS-026 2 OF 18 EVEN LEAD SIDES TOP VIEW

JEDEC J-STD-020

Contextual Info: MXO45LV/MXO45HSLV METAL DIP CLOCK OSCILLATOR FEATURES • • • • • Standard 14 Pin or 8 Pin DIP Footprint HCMOS/TTL Compatible Fundamental and 3rd Overtone Crystals Frequency Range 1.0 – 50 MHz Frequency Stability, ±50 ppm Standard ±25 ppm and ±20 ppm available

JEDEC J-STD-020

Abstract: MXO45HSLV-3C-32M7680 MXO45LV MXO45LV-3C-32M7680
Contextual Info: MXO45LV/MXO45HSLV METAL DIP CLOCK OSCILLATOR FEATURES • • • • • Standard 14 Pin or 8 Pin DIP Footprint HCMOS/TTL Compatible Fundamental and 3rd Overtone Crystals Frequency Range 1.0 – 50 MHz Frequency Stability, ±50 ppm Standard ±25 ppm and ±20 ppm available

JEDEC J-STD-020

Abstract: mxo45 application notes MXO45HS MXO45 45HST 10 mhz clock 14 pin dip
Contextual Info: MXO45/MXO45HS METAL DIP CLOCK OSCILLATOR FEATURES • • • • • Standard 14 Pin or 8 Pin DIP Footprint HCMOS/TTL Compatible Fundamental and 3rd Overtone Crystals Frequency Range 1.0 – 105.561 MHz Frequency Stability, ±50 ppm Standard ±25 ppm and ±20 ppm available

JEDEC J-STD-020

Abstract: mxo45 application notes 45HST MXO45HS REV A MXO45HS
Contextual Info: MXO45/MXO45HS METAL DIP CLOCK OSCILLATOR FEATURES • • • • • Standard 14 Pin or 8 Pin DIP Footprint HCMOS/TTL Compatible Fundamental and 3rd Overtone Crystals Frequency Range 1.0 – 105.561 MHz Frequency Stability, ±50 ppm Standard ±25 ppm and ±20 ppm available

SCS521

Abstract: halogen
Contextual Info: WILLAS FM120-M+ THRU SCS521G FM1200-M+ 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723 SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: WILLAS FM120-M+ THRU SCS520G FM1200-M+ 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: WILLAS FM120-M+ THRU SCS751G FM1200-M+ 30mA Surface Mount Schottky Barrier Rectifiers-40V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers

68L SOT 353

Abstract: tip 3035 transistor C04-067 footprint jedec MS-026 TQFP SP-750 footprint jedec MS-026 TQFP 128 C0421 30014 c04090 transistor wm
Contextual Info: SECTION 11 PACKAGING Outlines and Parameters . 1 Product Tape and Reel Specifications . 58

16N170A

Abstract: diode 22 161 smd
Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C

Contextual Info: Advance Technical Information IXGH 35N120C IXGT 35N120C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

ixgh35n120b

Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C

Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C

Contextual Info: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V IC25 = 30 A 3.8 V VCE sat = tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

Contextual Info: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20

Contextual Info: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V IC25 = 30 A VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20

Contextual Info: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

752 J 1600 V CAPACITOR

Abstract: 16N170 BiMOSFET
Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient

IXGH30N60B

Abstract: IXGT30N60B
Contextual Info: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms