JEP147 Search Results

Contextual Info: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

k4b2g1646q

Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Contextual Info: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

Contextual Info: W631GU6KB 8M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

W631GG6KB-12

Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
Contextual Info: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

W631GU8KB15K

Contextual Info: W631GU8KB 16M  8 BANKS  8 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

W632GG6KB

Abstract: W632GG6KB15I
Contextual Info: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

Contextual Info: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility

IDSH51

Contextual Info: April 2008 IDSH51–02A1F1C IDSH51–03A1F1C IDSH51–04A1F1C 512-Mbit Double-Data-Rate-Three SDRAM DDR3 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.92 Advance Internet Data Sheet IDSH51–0[2/3/4]A1F1C 512-Mbit Double-Data-Rate-Three SDRAM

Contextual Info: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07

Contextual Info: April 2008 HYB18M1G160DF–[6/7.5] HYB18M1G320DF–[6/7.5] HYE18M1G160DF–[6/7.5] HYE18M1G320DF–[6/7.5] 1Gbit DDR Mobile-RAM DRAMs for Mobile Applications RoHS Compliant Advance Internet Data Sheet Rev. 0.81 Advance Internet Data Sheet HY[B/E]18M1G[16/32]0DF–[6/7.5]

HYE18L256160BC-7

Contextual Info: Internet Data Sheet, Rev. 1.72, July 2005 HYB18L256160B[C/F]-7.5 HYE18L256160B[C/F]-7.5 HYE18L256160BCL-7.5 HYE18L256160BFL-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-07 Published by Infineon Technologies AG,

HYE18L512320BF-7.5

Abstract: HYB18L512320BF-7.5
Contextual Info: Data Sheet, Rev.1.2, April 2005 HYB18L512320BF-7.5 HYE18L512320BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany

hynix ddr3

Abstract: h5tc2g83 82-ball "2Gb DDR3L SDRAM" CL10 CL11 DDR3L
Contextual Info: 2Gb DDR3L SDRAM 2Gb DDR3L SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TC2G43AFR-xxA H5TC2G83AFR-xxA * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.1 / Nov. 2009 1 Revision History Revision No. History

HYB18L256160B

Contextual Info: September 2006 HYB18L256160B[C/F]-7.5 HYE18L256160B[C/F]-7.5 HYE18L256160BCL-7.5 HYE18L256160BFL-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev. 1.73 Data Sheet HY[B/E]18L256160B[C/F]L-7.5 256-Mbit Mobile-RAM HYB18L256160B[C/F]-7.5, HYE18L256160B[C/F]-7.5, HYE18L256160BCL-7.5, HYE18L256160BFL-7.5

Contextual Info: January 2007 HYB18L256169BFX-7.5 HYE18L256169BFX-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM RoHS Compliant Product Data Sheet R ev . 1 . 01 HY[B/E]18L256169BFX-7.5 256-Mbit Mobile-RAM HYE18L256169BFX-7.5 Revision History: 2007-01 , Rev. 1.01 Page

circuit diagram of ddr ram

Abstract: HYB18M1G320BF
Contextual Info: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00

P-VFBGA 49 package

Abstract: ddr ram optimum recievers smd code a12 HYB18M512160BFX P-VFBGA-60-1
Contextual Info: November 2006 HYB18M512160BFX-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Data S heet Rev. 1.10 HYB18M512160BFX 512-Mbit DDR Mobile-RAM HYB18M512160BFX-7.5, , Revision History: 2006-11, Rev. 1.10 Page Subjects major changes since last revision

HYB25L512160AC

Abstract: HYE25L512160AC
Contextual Info: Data Sheet, Rev. 1.3, April 2004 HYB25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice. Edition 2004-04

Contextual Info: Rev. 1.0, Nov. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

K4B4G0846C

Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Contextual Info: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

216-ball

Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
Contextual Info: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die

K4B4G0846B-HYK0

Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
Contextual Info: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed