JESD21 Search Results

Contextual Info: MX25L2026E MX25L2026E DATASHEET P/N: PM1580 1 REV. 1.4, NOV. 14, 2013 MX25L2026E Contents FEATURES. 4

Contextual Info: MX25L6475E MX25L6475E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1831 1 REV. 1.1, NOV. 11, 2013 MX25L6475E Contents 1. FEATURES. 4

Contextual Info: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4

8-USON

Contextual Info: MX25L512E MX25L512E DATASHEET P/N: PM1669 1 REV. 1.3, DEC. 10, 2013 MX25L512E Contents FEATURES. 4

Serial Flash

Contextual Info: MX25L25735F MX25L25735F DATASHEET P/N: PM1799 MX25L25735F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6

MX25L12873F

Abstract: MXIC MX25l12873f
Contextual Info: MX25L12873F MX25L12873F DATASHEET P/N: PM1914 MX25L12873F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6

Contextual Info: MX25L12875F MX25L12875F DATASHEET P/N: PM1855 MX25L12875F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6

IBM "embedded dram"

Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
Contextual Info: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of

Contextual Info: S25FL512S 512 Mbit 64 Mbyte MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O Data Sheet S25FL512S Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion®

JESD94

Contextual Info: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: S25FL127S 128 Mbit 16 Mbyte MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O Data Sheet (Preliminary) S25FL127S Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion®

S25FL116K

Contextual Info: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: TMS320F28377D, TMS320F28376D www.ti.com SPRS880 – DECEMBER 2013 TMS320F2837xD Dual-Core Delfino Microcontrollers Check for Samples: TMS320F28377D, TMS320F28376D 1 TMS320F2837xD Dual-Core Delfino MCUs 1.1 Features • Dual-Core Architecture – Two TMS320C28x™ 32-Bit CPUs

JESD216

Contextual Info: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial and Automotive Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

W25Q32FV

Abstract: 25Q32FV 25q32fvsig WINBOND 25Q32FVSIG 25Q32F W25Q32FVSSIG W25Q32FV application note W25Q32F W25Q32 25Q32fvsiq
Contextual Info: W25Q32FV 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: April 29, 2013 Revision G W25Q32FV Table of Contents 1. GENERAL DESCRIPTIONS. 5

W25Q128FV

Abstract: winbond 25q128fvsg 25Q128fv 25q128fvsg 25Q128 25Q128FVFG w25q128bv W25Q128F 25Q128F W25Q128FVEIF
Contextual Info: W25Q128FV 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: April 29, 2013 Revision H W25Q128FV Table of Contents 1. GENERAL DESCRIPTIONS. 5

Contextual Info: MX25U8033E MX25U8033E DATASHEET P/N: PM1718 1 REV. 1.7, JUL. 01, 2014 MX25U8033E Contents 1. FEATURES. 5

Contextual Info: Intel Solid-State Drive 520 Series Product Specification             Capacity: 60/120/180/240/480 GB Components: — Intel® 25nm NAND Flash Memory — Multi-Level Cell MLC Form Factor: 2.5-inch Thickness: 7 mm and 9.5 mm

command cathode 7 SEGMENT DISPLAY LT 543

Abstract: 82801IBM intel chipset 845 motherboard repair pml 003 am intel chipset 845 motherboard repair circuit 7 SEGMENT DISPLAY COMMON CATHODE lt 543 82801ibm ich9m PC MOTHERBOARD intel 845 circuit diagram mobile MOTHERBOARD CIRCUIT diagram ICH9
Contextual Info: Intel I/O Controller Hub 9 ICH9 Family Datasheet – For the Intel® 82801IB ICH9, 82801IR ICH9R, 82801IH ICH9DH, 82801IO ICH9DO, 82801IBM ICH9M and 82801IEM ICH9M-E, and ICH9M-SFF ICH9-I/O Controller Hubs August 2008 Document Number: 316972-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR

sdram pcb layout gerber

Abstract: ddr sdram 128Mbit 8Mx16 pc133 sdram 512mb ECC unbuffered pc133 SDRAM DIMM PC133 SDRAM Unbuffered DIMM trace code micron label PC200U-25330B-1 JC42 sdram pc133 pcb layout guide micron sdram pc133 pcb layout guide
Contextual Info: DDR SDRAM Unbuffered DIMM Design Specification Revision 0.6 November 1999 JC-42.5 Item #:_ Prepared By Micron Technology and IBM DDR SDRAM Unbuffered DIMM Design Specification Page 2 Revision 0.6 DDR SDRAM Unbuffered DIMM Design Specification Table of Contents

MT9HTF12872RHY-667E1

Abstract: JESD21-C JESD-21C MT9HTF12872RHY-667
Contextual Info: 512MB, 1GB x72, ECC, SR 200-Pin DDR2 SDRAM SORDIMM Features DDR2 SDRAM SORDIMM MT9HTF6472RH – 512MB MT9HTF12872RH – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 200-pin, small-outline registered dual in-line

MX25L6435

Abstract: MX25L6435EM2I-10G MX25L6435E MX25L6435EZ MX25L64 MX25L6435EZNI MX25L6435EZNI-10G
Contextual Info: MX25L6435E MX25L6435E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1784 1 REV. 1.0, SEP. 06, 2012 MX25L6435E Contents 1. FEATURES. 4

JESD-21C

Contextual Info: PC1600 and PC2100 DDR SDRAM Unbuffered DIMM Design Specification Revision 1.1 October 15, 2001 Table of Contents PC1600/PC2100 DDR SDRAM Unbuffered DIMM Design Specification Table of Contents Table of Contents .2

JESD21-C

Abstract: JESD-21C MT9HTF12872CHY-800
Contextual Info: 512MB, 1GB x72, ECC, SR 200-Pin DDR2 SDRAM SOCDIMM Features DDR2 SDRAM SOCDIMM MT9HTF6472CH – 512MB MT9HTF12872CH – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 200-pin, small-outline clocked dual in-line memory