JFET 401 Search Results

Contextual Info: W IH 401A H A R R IS S E M I C O N D U C T O R QUAD Varafet Analog Switch GENERAL DESCRIPTION FEATURES The IH401A is made up of 4 monolithically constructed combinations of a varactor type diode and an N-channel JFET. The JFET itself is very similar to the popular 2N4391,

dual spst JFET

Contextual Info: IH401A HARRIS S E M I C O N D U C T O R QUAD Varafet Analog Switch GENERAL DESCRIPTION FEATURES The IH401A is made up of 4 monolithically constructed combinations of a varactor type diode and an N-channel JFET. The JFET itself is very similar to the popular 2N4391,

U403

Abstract: U402 U401 U404 U406
Contextual Info: U 401-U 406 Monolithic Dual N-Channel JFET FEATURES • Minimum System Error and Calibration — 5mV Offset Maximum U401 , 95dB Minimum CMRR (U401-04) • Low Drift with Temperature — 10mV/°C Maximum (401, 02) • Operates from Low Power Supply Voltages —

TL075

Abstract: TL075CN IC ATA 2398 ic equivalent TL072CP tl075cn equivalent ic TL074 TL071CJG TL074M IC TL071 tlq74
Contextual Info: TL070, TL070A, TL071, TL071A, TL071B, TL072, TL072A, TL072B, TL074, TL074A, TL074B, TL075 LOW NOISE JFET INPUT OPERATIONAL AMPLIFIERS D2393, SEPTEMBER 1 9 7 8 -REVISED JANUARY 1989 19 DEVICES COVER COMMERCIAL, INDUSTRIAL, AND MILITARY TEMPERATURE RANGES Low Power Consumption

STR G 6351

Abstract: str 6351 000E-12 10747B TLE2161
Contextual Info: TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE iiPOWER OPERATIONAL AMPLIFIERS SLOSD49D - NOVEMBER 1989 - REVISED MAY 1996 • Wide Operating Supply Voltage Range VC C ± = ± 3 . 5 V t o ± 1 8 V Excellent Output Drive Capability V0 = ± 2.5 V Min at RL = 100 a

MOS 4016

Abstract: T4016B T40-16B
Contextual Info: A dvanced P ow er Te c h n o l o g y A P 400 ' 4016 T B V R 27A 0 160 2 V . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: Tem ic SST/U401 Series S e m i c o n d u c t o r s Monolithic N-Channel JFET Duals SST404 SST406 U401 U404 U406 Product Summary Part Number ^GS oft (V) U 401 - 0 .5 t o - 2 .5 -4 0 1 -2 5 S S T /U 4 0 4 - 0 .5 to " 2 .5 -40 I -2 15 S S T /U 4 0 6 - 0 .5 t o - 2 .5

U401

Abstract: D0808 sst406
Contextual Info: T e m ic SST/U401 Series Siliconix Monolithic N-Channel JFET Duals SST404 SST406 U401 U404 U406 Product Summary |VGs i — V q s 2 M a x m V P a rt N um ber v GS(ofl) (V) V (BR)GSS M in (V) gfs M in (m S ) i G i y p (pA ) U401 - 0 .5 to - 2 .5 -4 0 1 -2

transistor U402

Abstract: U402 U401 U401-6 U403 U404 U405 U406
Contextual Info: calodic Dual N-Channel JFET Switch CORPORATION U401-U406 A B S O L U T E M A X IM U M R A T IN G S T a = 2 5 °C u nle ss o th e rw ise specified F E A TU R E S • • • • M in im u m S ys te m E rror and C alibration Lo w D rift W ith Tem p e ra tu re

Contextual Info: Dual N-Channel JFET Switch calocflc CORPORATION \J U401-U406 A B S O L U T E M A X IM U M R A T IN G S T a = 2 5 °C unle ss o th e rw ise specifie d F E A TU R E S • • • • M in im u m S y s te m Erro r an d C alib ra tio n Lo w D rift W ith Tem p e ra tu re

Contextual Info: ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers the advantage of

Contextual Info: * AT&T Preliminary Data Sheet ALA400/401 Linear Array Family Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology

pnp 8 transistor array

Abstract: ALA400 transistor BIPOLAR npn 8 transistor array 1000 volt pnp transistor JFET 401 ARRAY resistor DS87-61LBC kss 216 complementary JFET
Contextual Info: AT&T Preliminary Data Sheet ALA400/401 Linear Array Fam ily Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a

zmd31015

Contextual Info: ZMD31015 RBicdLiteTM Low-Cost Sensor Signal Conditioner with Diagnostics Datasheet PRELIMINARY Features • • • • • • • • • • • • • • • • • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity

Contextual Info: ZMD31010 RBicLiteTM Low-Cost Sensor Signal Conditioner Datasheet Features Benefits • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity • Accommodates differential sensor signal spans from 1.2mV/V to 60mV/V • ZACwireTM one-wire interface.

Contextual Info: ZMD31010 RBicLiteTM Low-Cost Sensor Signal Conditioner Datasheet Features Benefits • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity • Accommodates differential sensor signal spans from 1.2mV/V to 60mV/V • ZACwireTM one-wire interface.

ZACwire

Contextual Info: ZMD31010 RBicLiteTM Low-Cost Sensor Signal Conditioner Datasheet Features Benefits • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity • Accommodates differential sensor signal spans from 1.2mV/V to 60mV/V • ZACwireTM one-wire interface.

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

SMD Codes

Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

Contextual Info: ZMD31010 RBicLiteTM Low-Cost Sensor Signal Conditioner Datasheet Features Benefits • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity • Accommodates differential sensor signal spans from 1.2mV/V to 60mV/V • ZACwireTM one-wire interface.

ZMD31010

Abstract: 5-30V 800H J107 MMBF4392 ZACwire ZMDA
Contextual Info: ZMD31010 RBicLiteTM Low-cost Sensor Signal Conditioner PRELIMINARY Datasheet Features Brief Description • The RBicLiteTM is a CMOS integrated circuit for highlyaccurate amplification and sensor-specific correction of bridge sensor signals. Digital compensation of

Contextual Info: ZMD31010 RBicLiteTM Low-Cost Sensor Signal Conditioner Datasheet Features Benefits • Digital compensation of sensor offset, sensitivity, temperature drift and non-linearity • Accommodates differential sensor signal spans from 1.2mV/V to 60mV/V • ZACwireTM one-wire interface.