JFET MATCHING FIXTURE Search Results

NONLINEAR MODEL LDMOS

Contextual Info: Slide 1 Extracting RF Mosfet Spice Models MTT 1998 - Baltimore Md. by S. K. Leong Polyfet Rf Devices www.polyfet.com This presentation is available on our web site Slide 2 Why simulate? n n n n n n n Simulation - It’s the only way! Fast accurate results. What if analysis.

ad654 spice

Abstract: DARLINGTON TRANSISTOR ARRAY AD75019
Contextual Info: ANALOG DEVICES INC 51E D • OfllbflQQ 0 0 3 7 3 T M b42 ■ ANA - H7.-e>\ i r ■ MIXED SIGNAL M U M ' >Jlil\Ul' J.;! r l □ Q ANALOG DEVICES * ANALOG DEVICES INC 51E D ■ OfllbBOD 0 0 3 7 3 ^ 5 Table of Contents 1 Summary 2 ASIC Processes 5 LC2MOS Cell Library

TL052

Abstract: op tl082 Instrumentation Amplifier circuit with tl082 TL052C
Contextual Info: TL052, TL052A ENHANCED JFET PRECISION DUAL OPERATIONAL AMPLIFIERS D3235, JUNE 1988- REVISED FEBRUARY 1991 • Maximum Offset Voltage . . . 800 |iV TL052A • High Slew Rate . . . 17.8 V/jis Typ at 25°C • Low Total Harmonic Distortion . . . 0.003% Typ at R|_ = 2 kfl

Instrumentation Amplifier IC with tl084

Abstract: u1d diode ic TL074 APPLICATION NOTES
Contextual Info: TL054, TL054A ENHANCED JFET PRECISION QUAD OPERATIONAL AM PLIFIERS D3236, JUNE 1988 - REVISED JANUARY 1991 D, J, o r N PACKAGE Maximum Offset Voltage . . . 1.5 mV TL054A (TOP VIEW) High Slew Rate . . . 15.9 V/fts Typ at 25°C 1 OUT [ 1 U 14 2 4 OUT 13 3 4 IN 1 IN - C 2

Contextual Info: u _ LT1122 m TECHNOLOGY F€ATUR€S Fast Settling, JFET Input O p e ra tio n a l A m plifier D CSCRIPTIOn • 100% Tested Settling Time to 1mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor ■ Slew Rate ■ Gain Bandwidth Product

MARKING 2AM

Contextual Info: □m TECHNOLOGY nppucnnons • Fast 12-Bit D/A Output Amplifiers ■ High Speed Buffers ■ Fast Sample and Hold Amplifiers ■ High Speed Integrators ■ Voltage to Frequency Converters ■ Active Filters ■ Log Amplifiers ■ Peak Detectors Fast Settling, JFET Input

transistor bc 5588

Contextual Info: LT1122 Fast Settling, JFET Input Operational Amplifier FEATURES DESCRIPTION 100% Tested Settling Time 340ns Typ to 1mV at Sum Node, 10V Step 540ns Max Tested with Fixed Feedback Capacitor n Slew Rate 60V/µs Min n Gain-Bandwidth Product 14MHz n Power Bandwidth 20V

Contextual Info: _ LT1122 e r u n t A ß TECHNOLOGY F€ATUR€S • 100% Tested Settling Time to 1 mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor ■ Slew Rate ■ Gain Bandwidth Product ■ Power Bandwidth 20Vp-p ■ Unity Gain Stable; Phase Margin

VTL5C10

Contextual Info: LT1122 Fast Settling, JFET Input Operational Amplifier FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO U ■ 100% Tested Settling Time to 1mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor Slew Rate Gain Bandwidth Product Power Bandwidth 20Vp-p

Vactec VTL5C10

Abstract: VTL5C10 LT1122 Vactec jfet matching fixture LT1122CS8 VTL5C1 LT1122AMJ8 LT1122CCJ8 CLM410
Contextual Info: LT1122 Fast Settling, JFET Input Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 100% Tested Settling Time to 1mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor Slew Rate Gain Bandwidth Product Power Bandwidth 20Vp-p

LT1122ACN8

Contextual Info: rruncAB TECHNOLOGY F€ ATU R €S • 100% Tested Settling Time to 1 mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor ■ Slew Rate ■ Gain Bandwidth Product ■ Power Bandwidth 20Vp-p ■ Unity Gain Stable; Phase Margin ■ Input Offset Voltage

Anaren Microwave

Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter
Contextual Info: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. simon_wood@cree.com Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been

LF400

Contextual Info: High-Speed, Fast-Settling Precision Operational Amplifier OP-42 ANALOG DEVICES □ F EA TU R ES Fast • Slew • Settllng-Tlme 0.01% . 1(isMax

jfet matching fixture

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT NMOS MODEL PARAMETERS SPICE RF Power Transistor spice AN002 ZERO Bias diode "RF MOSFETs" NMOS depletion pspice model depletion MOSFET SPICE AN001
Contextual Info: A tiIxK APPLICATION NOTE #AN001 REV 07/15/91 MICROW AVE POW ER TRANSISTOR IMPEDANCE MEASUREMENT M m /a - c o m p h i , in c . Introduction Calibration The required input and output impedances for M /A-COM PHI microwave power transistors are specified as Z if and Z of respectively. Z if is the test

Contextual Info: JUL 1 * * _ r r u i m TECHNOLOGY F€flTUR€S • 100% Tested Settling Time to 1mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor ■ Slew Rate ■ Gain Bandwidth Product ■ Power Bandwidth 20Vp-p ■ Unity Gain Stable; Phase Margin

Contextual Info: K Series with PFC Data Sheet 150 – 280 Watt AC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available. • Class I equipment • • • • Power factor >0.93, harmonics IEC/EN 61000-3-2 Immunity according to IEC/EN 61000-4-2, -3, -4, -5, -6

LK5660-7R

Abstract: L3032 LK2000
Contextual Info: K Series with PFC Data Sheet 150 – 280 Watt AC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available. • Class I equipment • • • • Power factor >0.93, harmonics IEC/EN 61000-3-2 Immunity according to IEC/EN 61000-4-2, -3, -4, -5, -6

tunable notch filter

Abstract: d0755 sine wave Oscillator jfet circuit ad549 sockets
Contextual Info: 36 V, 19 MHz, Low Noise, Low Bias Current, JFET Operational Amplifier ADA4627-1 PIN CONFIGURATIONS Low offset voltage: 200 V maximum Offset drift: 1 μV/°C typical Very low input bias current: 5 pA maximum Extended temperature range: −40ºC to +125ºC

ada4627

Abstract: ADA4627-1 Ask The Applications Engineer-25 AD8620 ADA4 AD8510 AD8512 AD8610 AD8615 AD8616
Contextual Info: 36 V, 19 MHz, Low Noise, Low Bias Current, JFET Operational Amplifier ADA4627-1 PIN CONFIGURATIONS Low offset voltage: 200 V maximum Offset drift: 1 μV/°C typical Very low input bias current: 5 pA maximum Extended temperature range: −40°C to +125°C

SBOS197E

Contextual Info: OPA657 OPA 657 www.ti.com SBOS197E – DECEMBER 2001 – REVISED DECEMBER 2008 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA657 combines a high gain bandwidth, low distortion, voltage-feedback op amp with a low voltage noise JFET-input

OPA355

Abstract: OPA627 OPA655 OPA656 OPA657 OPA657U THS4601 OPA657 transimpedance amplifier
Contextual Info: OPA657 OPA 657 www.ti.com SBOS197E – DECEMBER 2001 – REVISED DECEMBER 2008 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA657 combines a high gain bandwidth, low distortion, voltage-feedback op amp with a low voltage noise JFET-input

Contextual Info: OPA657 OPA 657 www.ti.com SBOS197E – DECEMBER 2001 – REVISED DECEMBER 2008 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA657 combines a high gain bandwidth, low distortion, voltage-feedback op amp with a low voltage noise JFET-input

OPA657 transimpedance amplifier

Contextual Info: OPA657 OPA 657 SBOS197D – DECEMBER 2001 – REVISED MARCH 2006 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA657 combines a high gain bandwidth, low distortion, voltage-feedback op amp with a low voltage noise JFET-input

OPA657 transimpedance amplifier

Abstract: board opa657 08mV A57 SOT23-5 opa 10MHZ OPA355 OPA627 OPA655 OPA656 OPA657
Contextual Info: OPA657 OPA 657 SBOS197D – DECEMBER 2001 – REVISED MARCH 2006 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA657 combines a high gain bandwidth, low distortion, voltage-feedback op amp with a low voltage noise JFET-input