JG 1028 Search Results

Contextual Info: r i n 4 3 THIS DRAWING IS UNPUBLISHED. R COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 2 ,19 LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 P LTR L DESCRIPTION REV PER OG3C-0099-00 REDRAWN DATE DWN APVD 30MAR00 BH JG D D . 0 0 0 0 3 0 GOLD ON CONTACT AREA,

028027

Abstract: 028026 028029
Contextual Info: 4 T H IS DRAWING R 3 RELEASED FOR P U B L I C A T IO N IS UNPUBLISHED. COPYRIGHT 19 BY AMP INCORPORATED. 2 ,1 9 LOC ALL RIGHTS RESERVED. AD DI ST REVISIONS 00 DES C RI PT IO N LTR REV PER 0G 3C -0099-00 REDRAWN DATE DWN APVD 30M AR00 BH JG D . 0 0 0 0 3 0 GOLD ON CONTACT AREA,

gruner

Abstract: AF125 VEB Funkwerk Erfurt iran Erfurt Planschirm 20/RGI TGL
Contextual Info: Pl.Nr. 1303 26 553 Einsprüche bU 30.6.66 andie durchfdhrende Stelle mit Kopieorrdis beauftragte ZfS Entwurf DDR-Standard OK 6 2 1 .3 8 5 .8 3 2 . Mai 966 TGL, Elektronenröhren OSZILLOGRAPHENRÖHRE B 13 S5 ?^76KTpOHHblB yJ9Mnbi OciiM^viorp^iMsecKaii ipyÍKa 613 55

Contextual Info: m r m m 151 ; 1111 • & i ° i 3 i $ £ j i i B j % « $ 3g RADIAL LEADED MLCC • S T Ä Ä Ä HOWTOORDER CT4 - 0 80 5 Y_ 104 M_ 500 P_ F3 I M W H I G A: H Wtt: B: ! »l Type S I M Tolerance 0805 0 .1 7 X 0 .1 5 B ± 0 .10pF 1206 0 .2 0 X 0 .1 8 C ±0 .25p F

Contextual Info: 4 DRAWING MADE IN T H IR D ANGLE 3 T H I S DRAWING IS UNP0BLI5HED. 0 C O P Y R IG H T RELEASED FOR P Ü B LIC ATIO N BY AMP INCORPORATED. ALL IN T E R N A T IO N A L 19 2 <3> P R O JE C T IO N ,19 R IG H T S AD RESERVED. R EV I 5 I 0 N 5 D I 5T LOC 39 P

2SC4252

Contextual Info: TO SHIBA 2SC4252 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4252 TV TUNER, VHF OSCILLATOR APPLICATIONS COM M ON COLLECTOR • Transition Frequency is High and Dependent on Current Excellently. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

CD 5888 CB

Abstract: CD 5888 el 5730 UPD75P0076GT cd 5888 s D 5888 s
Contextual Info: IC dependence of oscillating characteristfcs uPD 75P0076G T FCR3.58M C5 - STD Room T em p. Vdd CV3 5 I te m a*e UPD75P0076GT - CU-4 V d d - 5 CV] FCR3.58HC5 (F ig.a-e) Typical yf a. V1H/V1L m V2H/V2L [V ] s 3 1 -1 7f a 1 b . • V2II M 5 3 1 -1 e •9 .3

BD536 equivalent

Abstract: B0536 BD535 equivalent BDB38 80614 Motorola 8061 b0538 8D535 BD638 8053
Contextual Info: MOTOROLA SC ÍXSTRS/R F> ^ 6367254 MOTOROLA SC XSTRS/R P E 1 ^ 3 1 . 7 551* QQflQ b l l 96D F 8061 1 D 7 z J3 - J!- 3 2 > - c 2 / MOTOROLA SEM ICONDUCTOR TECHNICAL DATA NPN PNP BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

TA7670P

Abstract: v6425 TA7670 saw filter toshiba T-F
Contextual Info: TOSHIBA TA7670P VI DE O- CH ROMA-DEFLECTION SYSTEM Unit: nsn FOR A COLOR TELEVISION The TA7670P combines the Video-Chroma subsystem and the Deflection combination on a single monolithic integrated circuit to provide a Color Television Video-ChroraaDeflection system.

str g 8656

Abstract: str g 8653
Contextual Info: tysit cnaJ ; 2 2 -2 7 4 22 thru 27. 33 thru 37 . 43 thru 4 8 . 58. 59 thru 63. 67. 68. 69 thru 71.

Contextual Info: NUMERICAL INDEX •jg ; 2 2 -2 2 6 22 thru 2 7 . 33 thru 3 7 . 43 thru 4 8 . 5 2 . 5 5 . 5 8 . 59 thru 6 0 . 61 thru 63 . 6 7 .

AX-RAI01300170-DE

Abstract: cf406 AX-RAO16300038-DE AX-FIJ3011-RE B083 223 JX-A4075 421 B130 I558-E2-02-X solenoid pwm proportional valve AX-FIJ3005-RE
Contextual Info: Cat. No. I558-E2-02-X Cat. No. I558-E2-02-X JX OMRON EUROPE B.V. Wegalaan 67-69, NL-2132 JD, Hoofddorp, The Netherlands. Tel: +31 0 23 568 13 00 Fax: +31 (0) 23 568 13 88 www.industrial.omron.eu Austria Tel: +43 (0) 2236 377 800 www.industrial.omron.at France

80C286

Abstract: 80C286-10 80C286-12 80C286-16 80C286-20 80C286-25 80C86 80C88 CG80C286-12 HARRIS 80286
Contextual Info: 80C286 Semiconductor High Perform ance M icroprocessor w ith M em ory M anagem ent and Protection March 1997 Features Description • Com patible with NMOS 80286 The Harris 80C286 is a static CMOS version of the NMOS 80286 microprocessor. The 80C286 is an advanced, highperformance microprocessor with specially optimized capa­

cs80c286

Abstract: SKD15
Contextual Info: 80C286 HARRIS S E M I C O N D U C T O R High Perform ance M icroprocessor w ith M em ory M anagem ent and Protection March 1997 Features Description • Com patible with NMOS 80286 The Harris 80C286 is a static CMOS version of the NMOS 80286 microprocessor. The 80C286 is an advanced, highperformance microprocessor with specially optimized capa­

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

Contextual Info: OPERATIONAL AMPLIFIERS W9Ê OPA62Q Or, Call Customer Service al 1-8S0-548-6132 USA Only Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • LOW NOISE 8-PIN DIP, SOIC PACKAGES AND DIE

80C286

Abstract: 80C286-10 80C286-12 80C286-16 80C286-20 80C286-25 80C86 80C88 CG80C286-12 HARRIS 80286
Contextual Info: 80C286 H a r r is S E M I C O N D U C T O R High Perform ance M icroprocessor w ith M em ory M anagem ent and Protection March 1997 Features Description • Com patible with NMOS 80286 The Harris 80C286 is a static CMOS version of the NMOS 80286 microprocessor. The 80C286 is an advanced, highperformance microprocessor with specially optimized capa­

80C286F

Abstract: 0C001
Contextual Info: ^ 80C286 HARRIS January 1992 High Performance M icroprocessor With Memory Management and Protection Features Pin Configurations • C o m p a tib le w ith N M O S 8 0 2 8 6 C o m p o n e n t P ad V ie w — As viewed from underside of the com ponent when mounted on the board.

ANA 6681

Abstract: dot matrix 8*8 TOM -1588 tic 246 bd s639b ZZZB KS0070 ci 4303
Contextual Info: KS0070 CMOS DIGITAL INTEGRATED CIRCUIT DOT MATRIX LCD CONTROLLER & DRIVER KS0070 is a do t m atrix LCD driver & c o n tro lle r LSI w hich is fabricated by low pow er CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 80 segment signal

117450

Abstract: TO253 lt941 ltc947 1624i LT 129i5 sm 2178a LT1510CGN sot23 1303 ltbw 83
Contextual Info: PACKAGE PACKAGE CROSSDIMENSIONS REFERENCE SIDE BRAZED PACKAGE OUTLINE DESCRIPTION LTC NSC MOT TI LINFIN MAXIM 8-Lead Side Brazed Hermetic D8 D D ADI/PMI — l — — DA 14-, 16-, 18- and 20-Lead Side Brazed (Hermetic) D D D YB QB XB L — — DD, DE, DN, DP

Contextual Info: TMS370Cx4x 8-BIT MICROCONTROLLERS SP S N O I6- N O V E M B E R 1992 J, N AND N2 PACKAGESt TOP VIEW CMOS/EEPROM/EPROM Technologies on a Single Device - Mask ROM Devices for High Volume Production - One-Time Programmable (OTP) Devices for Low Volume Production

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

JESD22 METHOD JA-104 aluminum electrolytic capacitor

Abstract: LB3900 C1206X X5R EC1002 Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
Contextual Info: Multilayer Ceramic Capacitors Automotive Grade Ceramic Automotive One world. One KEMET. Multilayer Ceramic Capacitors Automotive Grade Table of Contents Page Why Choose KEMET. 3

Contextual Info: High Performance Microprocessor With Memory Management and Protection Features 80C286 80C2Q6 2 HARRIS Pin Configurations • Compatible with NMOS 80286 Component Pad Views — As viewed from underside of the com o on en t when m ounted on ine board • Static CMOS Design for Low Power Operation