Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    JI BIPOLAR Search Results

    JI BIPOLAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S549FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=1.5/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    JI BIPOLAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ASIC Capabilities

    Abstract: Calogic Bipolar Junction Transistor metal detectors circuits JI Bipolar
    Text: Full Custom Analog ASIC Capabilities Calogic designs and manufactures Bipolar Junction Isolated JI and Dielectrically Isolated (DI) products. SPICE models, layout, DRC and ERC are available. These processes are executed in Calogic’s state of the art wafer fabrication facility located in


    Original     		PDF DS025 ASIC Capabilities Calogic Bipolar Junction Transistor metal detectors circuits JI Bipolar

    Mitsubishi Electric IGBT MODULES

    Abstract: DVD pickup assembly gallium phosphide band structure mitsubishi sic MOSFET blue Laser-Diode Ghz BU1570KN DVD optical pick-up assembly general electronics mini projects topics apollo guidance automatic plant watering
    Text: For the Year Ended March 31, 2007 Inspire Innovation Design of the Future The Keage district was a harbinger of Kyoto's modernization. As one approaches the temple Nanzen-ji, majestic brick arches rise into sight. The Suirokaku aqueduct, built at the dawn of the Meiji era,


    Original     		PDF

    MAX161CMJI883B

    Abstract: No abstract text available
    Text: SCOPE: CMOS, 8-BIT, 8-CHANNEL DATA ACQUISITION SYSTEM Device Type 01 02 03 Generic Number MAX161A x /883B MAX161B(x)/883B MAX161C(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835 JI


    Original     		PDF MAX161A /883B MAX161B MAX161C /883B Mil-Std-1835 GDIP1-T28 CDIP2-T28 MAX161CMJI883B

    LT1013CP

    Abstract: LT1014 LT1014 DIE
    Text: TEXAS INSTRUMENTS Informational Notification for the Qualification of LT1014 Die Revision H October 2, 1998 Abstract Texas Instruments Inc., Standard Linear and Logic products SLL has completed a redesign/shrink of the LT1014 device. This device is manufactured in the Sherman Wafer Fab (SFAB) using qualified JI


    Original     		PDF LT1014 LT1014 QTS-10436 LT1013CP LT1014 DIE

    Untitled

    Abstract: No abstract text available
    Text: SCOPE: CMOS, 8-BIT, 8-CHANNEL DATA ACQUISITION SYSTEM Device Type 01 02 03 Generic Number MAX161A x /883B MAX161B(x)/883B MAX161C(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835 JI


    Original     		PDF MAX161A /883B MAX161B MAX161C /883B Mil-Std-1835 GDIP1-T28 CDIP2-T28

    LT1013CP

    Abstract: LT1013
    Text: TEXAS INSTRUMENTS Informational Notification for the Qualification of LT1013 Die Revision H September 30, 1998 Abstract Texas Instruments Inc., Standard Linear and Logic products SLL has completed a redesign/shrink of the LT1013 device. This device is manufactured in the Sherman Wafer Fab (SFAB) using qualified JI


    Original     		PDF LT1013 LT1013 QTS-10436 LT1013CP

    hall 503 911

    Abstract: MAR 740 MOSFET TRANSISTOR mitsubishi sic MOSFET health insurance philippines nec 2701 271 Ceramic Disc Capacitors an 503 hall sensor Laser Diode for dvd Recording 104 Ceramic Disc Capacitors 490-48
    Text: Annual Report 2006 For the Year Ended March 31, 2006 Ambrosial Gaze A dragon among the clouds is majestically painted on the ceiling of the Lecture Hall in the Myoshin-ji temple. No matter where you are in the great hall, the dragon’s eyes are watching you.


    Original     		PDF 300TSU hall 503 911 MAR 740 MOSFET TRANSISTOR mitsubishi sic MOSFET health insurance philippines nec 2701 271 Ceramic Disc Capacitors an 503 hall sensor Laser Diode for dvd Recording 104 Ceramic Disc Capacitors 490-48

    Transistor C604

    Abstract: No abstract text available
    Text: PD - 9.780A International ïo r Rectifier IRGP430U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGP430U O-247AC 4S55452 002D3m Transistor C604

    Untitled

    Abstract: No abstract text available
    Text: JI.' i ’»<: P54/74FCT521/A/B/C P54/74PCT521/A/B/C ULTRA-HIGH SPEED CMOS 8-BIT IDENTITY COMPARATORS j A - - FEATURES Function, Pinout, and Drive Compatible with the


    OCR Scan     		PDF P54/74FCT521/A/B/C P54/74PCT521/A/B/C) MIL-STD-883, AE18190

    transistor c246

    Abstract: transistor c245 c245 transistor
    Text: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBF30F 10kHz) O-220AB C-247 46S5455 TQ-220AB C-248 transistor c246 transistor c245 c245 transistor

    GT8G121

    Abstract: a1909 vqe 23
    Text: TOSHIBA GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 G 1 21 Unit in mm STROBE FLASH APPLICATIONS • • • 4th Generation Trench Gate Structure Enhancement-Mode Low Saturation Voltage U V ia * .; ( @ I ( j — jI oC \JA . At t j\


    OCR Scan     		PDF GT8G121 GT8G121 a1909 vqe 23

    24cc02

    Abstract: MBM10422 MBM10422A-7 MBM10422A FPT-24CC02
    Text: F U JI T S U M ICROELECTRONICS. INC. 1 *1 / — ' ECL 1024-BIT BIPOLAR ï1' RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10422A is a fully decoded 1024-bit ECL read/write random access memory designed for high-speed scratch pad, con­ trol and buffer storage applica­


    OCR Scan     		PDF 1024-BIT MBM10422A 24cc02 MBM10422 MBM10422A-7 FPT-24CC02

    SL4 diode

    Abstract: SR330 8 bit half adder 74 Z03 Series ZD3,9 CD60 CD61 CD62 DM10900 TUL5014
    Text: 2900 Family/ Bipolar Microprocessor National J ji Semiconductor PRELIMINARY DM10900 8-Bit Parity ALU Slice Features General Description The DM10900 8-Bit M ic ro p ro c e s s o r s lic e is a cascadable device desig ned fo r use in high pe rform ance ce n ­


    OCR Scan     		PDF DM10900 TUL5014 24-Bit SL4 diode SR330 8 bit half adder 74 Z03 Series ZD3,9 CD60 CD61 CD62 TUL5014

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc. VN0655 VN0660 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information JI bZL Order Number / Package TO-39 550V 200 0.25A VN0655N2 600V 200 0.25A VN0660N2 R DS<ON max) TO-92 TO-220 Dicet VN0655N3 VN0655N5 VN0655ND VN0660N3 VN0660N5


    OCR Scan     		PDF VN0655 VN0660 VN0655N2 VN0660N2 O-220 VN0655N3 VN0655N5 VN0655ND VN0660N3 VN0660N5

    74FCT244AT

    Abstract: 74FCT244ATM 74FCT241 74fct240 CD74FCT240AT CD74FCT244AT FCT240AT 74fct540 74FCT244
    Text: CD74FCT240AT and CD74FCT244AT were not acquired from Harris Sem iconductor. JI/, _ In s t r u m I n t s Data sheet acquired from Harris Sem iconductor SCH S270A CD54/74FCT240, CD54/74FCT240AT, CD54/74FCT241, CD54/74FCT244, CD54/74FCT244AT _ _ _ . . . FCT Interface Logic


    OCR Scan     		PDF CD74FCT240AT CD74FCT244AT CD54/74FCT240, CD54/74FCT240AT, CD54/74FCT241, CD54/74FCT244, CD54/74FCT244AT SCHS270A CD54/74FCT240AT 74FCT244AT 74FCT244ATM 74FCT241 74fct240 FCT240AT 74fct540 74FCT244

    PMS01

    Abstract: No abstract text available
    Text: /= T " * ji. S G S -T H O M S O N KílDIgIMlIlLlgirMIIKgg T S 5 5 6 C ,I,M LOW POWER DUAL CMOS TIMERS • VERY LOW POWER CONSUMPTION : ■ 100|iA typ at Vcc = 5V ■ HIGH MAXIMUM ASTABLE FREQUENCY 2.7MHz * PIN-TO-PIN AND FUNCTIONALLY COMPATIBLE WITH BIPOLAR NE555


    OCR Scan     		PDF NE555 1012Q DIP14 TS556C TS556I TS556M TS556IN PM-S014 PMS01

    transistor HAN 819

    Abstract: No abstract text available
    Text: QPA602 High-Speed Precision Difet• OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • • • • • • • PRECISION INSTRUMENTATION WIDE BANDWIDTH: 6.5MHz HIGH SLEW RATE: 35V/}ia LOW OFFSET: ±250|iV max LOW BIAS CURRENT: ±1pA max FAST SETTLING TIME: 1 ji* to 0.01%


    OCR Scan     		PDF OPA602 OPA602 25rrw transistor HAN 819

    Untitled

    Abstract: No abstract text available
    Text: □Mn ADC-530 12-Bit, Ultra-fast, Low-Power A/D Converter FEATURES ji 12-Bit resolution 350 Nanoseconds maximum conversion time Low-power, 2.1 W Small initial errors Three-state output buffers -55 to +125 °C operation Small 32-pin DIP No missing codes i 4L


    OCR Scan     		PDF ADC-530 12-Bit, 12-Bit 32-pin ADC-530

    tda 7851

    Abstract: TDA 7851 A B1B12 AD311 74LS244 buffer AD39S dataset AD394 AD395 audio boosters
    Text: liP Compatible Multiplying Quad 12-Bit D/A Converter ANALOG DEVICES $S t£ jr •■ V - i -. >->■■■ > \" . ji- ", . ■ . ; FEATURES Four Complete 12-Bit CMOS DACs with Buffer Registers Linearity Error ±1/2LSB Tmin-Tmax AD394, AD395K,T Factory-Trimmed Gain and Offset


    OCR Scan     		PDF 12-Bit AD394, AD395K MIL-STD-883 94/AD395 AD394 12-bit, 28-pin tda 7851 TDA 7851 A B1B12 AD311 74LS244 buffer AD39S dataset AD395 audio boosters

    10410

    Abstract: No abstract text available
    Text: ¡1111 _ F U JI T S U / ECL 256-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10410 September 1978 256-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The MBM 10410 is an ECL 256-B it Read/Write Random Access Memory R A M }, organized 256 w ords x 1 bit. It has a typical access tim e o f 20 ns


    OCR Scan     		PDF 256-BIT MBM10410 256-B 16-pin 10410

    LBE1004R

    Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
    Text: OLE T> N AMER P H IL IP S /D IS C R E T ! •FbbSB^l MAINTENANCE TYPES Q O lim ? JI' for new design use LBE/LCE2003S and LBE/LCE2009S S ■ LBE/LCE1004R LBE/LCE1010R MICROWAVE LINEAR POWER TRANSISTORS N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.


    OCR Scan     		PDF LBE/LCE1004R LBE/LCE2003S LBE/LCE2009S) LBE/LCE1010R LBE1004R LBE1010R LCE1004R LCE1010R IEC134) 1004R amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier Marking LBE

    VN0650N3

    Abstract: No abstract text available
    Text: V N 06E L Ji S u p e r te x in c . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices max (min) TO-39 TO-92 TO-220 Dicet 450V 16£2 0.5A VN0645N2 VN0645N3 VN0645N5 VN0645ND 500V 16U 0.5A VN0650N2 VN0650N3 VN0650N5


    OCR Scan     		PDF VN0645N2 VN0650N2 VN0645N3 VN0650N3 O-220 VN0645N5 VN0650N5 VN0645ND VN0650ND VN06E VN0650N3

    Untitled

    Abstract: No abstract text available
    Text: MTCfji] JI T -l 3mm Bi-Polar Indicator Lamp U LTL- 10CEJ High Efficiency Red I C L 1k I Features Package Dimensions • Dual Hi.Eff.R ed chips are m atched for uniform light output. • T-1 type package. • Long life solid sta te reliability. (.118) 1.0


    OCR Scan     		PDF 10CEJ LTL-10CEJ

    HARRIS 2425

    Abstract: hi pot test sheets
    Text: HARRIS SEMICOND SECTOR 77 ji 3 0 2 2 7 1 HARRIS SEMICOND SECTOR D E | 4BD2S71 OOOTIHt, T | ~ 77C 09X36 D Q BHARRIS Fast Sample and Hold Features Applications • Maximum Acquisition Time 10V Step to 0.1% • 12-Bit Data Acquisition 4/us (10V Step to 0.01%). Bus


    OCR Scan     		PDF 4BD2S71 09X36 12-Bit 1000pF) HA-2420/2425 HARRIS 2425 hi pot test sheets