JJ ELECTRONIC Search Results

Contextual Info: 2 4 3 5 j j j j j j j j Kontaktbelegung contact loading 1 2 2:1 Kontakt-Typ pin type j j j j jj jjj j jj jjj j jj jjj j j j j j j j I I 6 10 7 6 j j j j j j j j j j j j j j j j j j j j j j j j i u i; k A B C D E F jj jj jjj jj jj jjj jj jj jjj j j j j j j j

Contextual Info: 61 52,2 Contact No.1 1,2 1 j[j di) 0 (IH iiH jjH ijH jIH jjH jj)- <jj) 0 (jj) @ @ @ 0 (jjHii)< o (<>) (<>) ( » ; (<>; te n » >• ($ )($ )($ ) (|) ($)(<[>) (j[j) ($) (jp) ($) to CO LO (<>) ( o ) ( o ) (t> ) ( o ) ( ( >• "^JCM CO II 2,41 Contact No.78

Contextual Info: JJ Electronic flow monitors JJ Piston type flow switches FLOW MONITORS AND SWITCHES  DB_Flow_monitors_and_switches 01/2014 169 VE Electronic flow monitors Function The electronic flow monitor works on the principle of the detection of temperature differences. The cylindrical measuring probe

PTC KTY 81-121

Abstract: NTC+103AT-2 TSIA2002
Contextual Info: JJ Controllers, series CON JJ Indicators, series IND CONTROLLERS AND INDICATORS  DS_Controllers_and_indicators 05/2014 149 Effective implementation of visualisation and control tasks Electronic indicating instruments visualise physical signals from measurement sensors. For example, a resistance signal from a

Contextual Info: A-A 2:1 max. 8,62 B 6.2 +0,16 board drillings i_n GO so pin-type — A B C Csl D E F H K ih ill A A S \k i I IZ I xm <p s Mi > <> < Ijj i_n Cvl (jj p< (jj in cvf -0 0 ,2 - cn cr ru 2,54 B (2:1) contact loading U_l U_l 10 9 1 6 -F- E E E E E E E E

ak143-3-r

Abstract: null modem color D-SUB 9 pin
Contextual Info: 3M +5CM DB9 Fem ale la 1 JJ Configuration: DB9F - 4 - 3 DB9F 1 2 3 4 5 7 8 - - - ITEM NO RoHS Compliant - 2 1 - 8 Notes:

BAV99T

Abstract: BAV70T BAW56T diode jd
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Diodes BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56T Marking: JD BAV70T Marking: JJ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 BAW56T/BAV70T/BAV99T SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56T Marking: JD BAV70T Marking: JJ

115E

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT Jj 1PS88SB48 Schottky barrier double diode array Product specification File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Aug 05 PHILIPS Philips Semiconductors Product specification Schottky barrier double diode array

Contextual Info: MC-42512AA40, -42512AB40 524,288 X 40-Bit Dynamic CMOS RAM Module ¿ K M JJ W NEC Electronics Inc. Prelim inary Information Aprii 1992 Description Pin Configuration The MC-42512AA40 and MC-42512AB 40 are fast-page dynamic RAM modules organized as 524,288 words by

D765A

Abstract: mpd765a PD765A D765B NEC 765A mPD765
Contextual Info: HtFC yuPD765A///PD765B Single/Double Density Floppy-Disk Controller NEC Electronics Inc. Description Features The jj PD765A/B is an LSI floppy disk controller FDC chip which contains the circuitry and control functions for interfacing a processor to 4 floppy disk drives. It is

LR4172E

Contextual Info: INDUSTRIAL ELECTRONIC T? D | 47443DH □□05737 L | T-V/-JJ IIGRCUICS” 4.0" 101.6mm LED DIGITAL DISPLAYS LR4171E LR4172E FEATURES • • • • • 4.0 inch character height (101.6mm) Viewing distance 100 feet High performance nitrogen-doped G a A sP on G a P

OC002

Abstract: capacitor 47pf
Contextual Info: USB Port Filters 11-2000 FEATURES: -Support Serial Data Transfer Technology -Integrated Single Package Solution for EMI/RFI Attenuation & Termination -System ESD Protection -Used in Network Hubs,Servers, Workstation Computers Downstream USD 16 R1 JJ R1 8 Upstream (USU) 5

cft 455 f

Abstract: E5 MOSFET
Contextual Info: IRFS244A A dvanced Power MOSFET FEATURES BV0SS = 250 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jj A Max. @ VOS =250V

Contextual Info: r THIS DRAWING IS UNPUBUSHED. COPYRIGHT 2004 RELEASED FOR PUBLICATION APR ,1 9 9 7 - BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC ALL RIGHTS RESERVED. J 5.55 4 .n 5E£ DESCRIPTION LTR RELEASED DATE FJBO— 0396— 04 23APR04 D JJ US o > CD I I I -

Contextual Info: f/PB100474A 1,024 X 4 -Blt tOOK ECL RAM L y fÆ Jj W NEC Electronics Inc. Description Pin Configurations The /xPB100474A is a very high-speed 100K interface ECL RAM organized as 1,024 words by 4 bits and designed with noninverted, open emitter outputs and full

U7777

Abstract: D41416
Contextual Info: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias

D41416

Abstract: PD41416 PD41416-15 HPD41416-12 PD41416-12
Contextual Info: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias

DM54

Abstract: DM54109 DM54109J DM54109W J16A W16A 65371
Contextual Info: <0 g jj National JZfl Semiconductor DM54109 Dual Positive-Edge-Triggered J-K Flip-Flops with Preset, Clear, and Complementary Outputs General Description This device contains two independent positive-edge-triggered J-K flip-flops with complementary outputs. The J and

NTE74LS194A

Abstract: NTE74181 NTE74LS181 NTE74LS193 NTE74193 32 bit carry select adder code NTE74S188 NTE74LS192 NTE74S181 NTE74S189
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74181, 24-Lead DIP, See Diag. 252 NTE74LS181, NTE74S181 Arithmetic Logic Unit/Function Generator Input 5 0 Jj vcc Input AO 2 16-Lead DIP, See Drag. 249 NTE74182, NTE74S182 Look-Ahead Carry Generator

Contextual Info: jj Straight, Dual Insulator FEATURES SINGLE ROW (1 to 40 positions) Dual insulator design adds mechanical stability Custom heights available for unusual board spacing MATE-RITE TIP prevents scraping of mating socket Insulator standoffs reduce rework due to flux residue

dwa 108 -a

Abstract: dwa 108 a dwa 108 292207-4 292207-5
Contextual Info: 4 COPYRIGHT 3 | THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION — I LOC »“ ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS DIST FB 00 DESCRIPTION DATE OWN APVD FBOO— 0015— 03 04FEB03 JJ TS LTR RELEASED D [ 1 .5x Pos— 1 + 2 .0 x 2 ]

MIL-STD-480

Abstract: r057
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OH 4 5 4 4 4 - £ " 3 .7 0 DESC-ECS M r. WonnelI/(AV 986 51 3-296-6047/n jj) 3 FEB Î993 SUBJECT: Notice of Revision (NOR) 5962-R 057-93 for Standardized Military Drawing (SMD) 5962-89808.

bu 1350

Abstract: BU 508 transistor power flyback bu508
Contextual Info: JJ-E M G CORP Û1 m DE|D[ gTMEb 7 | J - J 2 - Ó / Horizontal Deflection Transistors T E LEFU N K E N electronic provides horizontal deflection transistors in both the high voltage T O 3 large eyelet) hermetic package and in the high voltage epoxy package. Our basic