JJ SMD DIODE Search Results

H11G2

Abstract: H11G1 E91231 H11G1X H11G3 Diode smd code sm
Contextual Info: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS H11G1X VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802

Contextual Info: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS z H11G1X VDE 0884 in 3 available lead form:- STD - G form - SMD approved to CECC 00802

IS4N46

Abstract: 4N45 E91231 IS4N45 4N46 db9102 5v 10mA reed relay
Contextual Info: IS4N46 IS4N45 LOW INPUT CURRENT DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 "JJ " 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The IS4N45, IS4N46 are optically coupled

SMD npn TRANSISTOR 1a Darlington 200v

Abstract: smd transistor 2.FC IS725X E91231 IS725 smd diode code A4
Contextual Info: IS725 IS725X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The IS725 is an optically coupled isolator

SMD M1B diode

Abstract: SMD M1B sr smd diode smd marking KM m1b marking smd diode A4 J532 M3FL20U smd diode sr SMD marking "SR"
Contextual Info: Super Fast Recovery Diode mtm OUTLINE Single Diode M3FL20U U nit-m m W eight 0.072g Typ Package : M2F Jj V—Y-?—? 200V 3A Feature • /J v P S M D • Small SMD • ß y -rx • trr= 3 5 n s • Low Noise G> \4 • trr=35ns • Low V f=0.95V • <SV f=0.95V

smd diode sod-323 marking code a2

Abstract: smd diode A2 smd diode a6 JJ SMD diode smd diode marking JJ smd diode code a6 diode SMD MARKING CODE A6 DIODE SMD A6 A2 diode smd smd diode marking a6
Contextual Info: Two Terminals SMD Switching Diodes 1N4148WS/1N4448WS/BAV16WS Two Terminals SMD Switching Diodes Features • • • • Fast Switching Speed High Conductance Electrically Identical to Standard JEDEC RoHS compliant SOD-323 Mechanical Data SOD-323, Plastic Case

1N4148WS

Abstract: JJ SMD diode
Contextual Info: TWO TERMINALS SMD SWITCHING DIODES 1N4148WS/1N4448WS/BAV16WS Two Terminals Surface Mount Switching Diodes Features • • • • Fast Switching Speed High Conductance Electrically Identical to Standard JEDEC RoHS compliant SOD-323 Mechanical Data SOD-323, Plastic Case

Contextual Info: • lililí! Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode v0E, u, CE sat typ Combi Pack ^fi(typ) 500 V 44 A 2.1 V 55 ns TO-247SMD* Symbol Test Conditions VCES VCOR Jj 25°C to 150°C T,J = 25°C to 150°C; Rb t VGES VQEM Continuous

diode smd ED 84

Abstract: DSAIH00025343 SMD 437 diode
Contextual Info: Silicon Switching Diode 1N4153 DO-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features DO-35 Glass Package nominal dimensions Six sigma quality

s4c diode

Abstract: DIODE SMD MARKING 5C smd ic marking SH
Contextual Info: Super Fast Recovery Diode Single Diode mfm OUTLINE Package : STO-220 DF20L60 PyhfLig- ffl Unit-mm Weight 1.5g (Typ) 10.2 600V 20A Feature • SMD 1ralîEE • SMD •trr=70ns • trr=70ns • High Voltage 4.7 Main Use - PFC • PFC(Power Factor Correction)

10LC20U

Abstract: 10LC20 spacification DIODE smd marking MO 10LC2 smd diode marking JC DF10LC20U
Contextual Info: Super Fast Recovery Diode Twin Diode m tm m o u tlin e DF1 0 LC 2 0 U 20 0V 10A Feature • SMD • Low Noise • trr-35ns • SMD • e y -rx • trr-3 5 n s Main Use • D C /D C D y / K - Ï • m m , OA.RBE • a e .F A • • • • Switching Regulator

Contextual Info: Schottky Barrier Diode Single Diode D3FP3 U nit I mm Package : 2F Weight 0.16tf Typ ay— K v -y 30V 3A ' Cathode mark Feature • î • £«» • Small SMD • Ultra-Low Vf=0.4V S V f = 0 .4 V Main Use • n y x u - im s it • D C t U ^ lO R f f l

smd marking JD

Abstract: JJ SMD diode smd diode JD smd diode je smd transistor JE smd diode bas16t smd diode marking JJ smd marking JE smd diode A2 BAV70T
Contextual Info: Diodes SMD Type Switching Diode BAS16T;BAW56T BAV70T;BAV99T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 +0.01 0.1-0.01 +0.05 0.8-0.05 1 +0.15 1.6-0.15 2 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter

Contextual Info: SIEMENS low pow er S T L 8 1 0 0 7 G/N 1500 nm Laser in Receptacle Package Dimensions in inches mm STL81007G Fiber Optics Components Laser Diodes STL81007N FEATURES • Designed for fiber optic networks • Laser diode with multi-quantum well structure • Suitable for bit rates up to 1 Gbit/s

Contextual Info: SIEMENS low pow er m e d iu m p o w e r STL81004/ 81005G/N/Z STM81004/81005G/N/Z Fiber Optics Components User Diodes 1550 nm Laser in Coaxial Package with SM-Pigtail and Optional Connector FEATURES • Designed for fiber optic networks • Laser diode with multi-quantum well structure

Contextual Info: Single Diode M1FH3 Schottky Barrier Diode mtmm o u t l in e 30V 1.5A io V - P v - ? C ath o d e m ark CD Feature I Small SMD Super-Low V f= 0 .3 6 V •g e < g V F = 0 .3 6 V Unit-mm Weight 0.027g Typ Package : M1F H92 1 , T y p e No. Main Use • D C /D C

Contextual Info: SIEMENS low p o w e r STL51007G/N STM51007G/N MEDIUM POWER 1300 nm Laser in FC or SC Receptacle Package Dimensions in inches mm STL/STM51007G Fiber Optics Components Laser diodes STUSTM51007N FEATURES • Designed for fiber optic networks • Laser diode with Multi-quantum well structure

Contextual Info: SI EM ENS STL51004/51005G/N/Z m e d iu m p o w e r STM51004/51005G/N/Z HIGH POWER STH51004/51005G/N/Z LOW p o w e r Fiber Optics Com ponents La ser D iode s 1300 nm Laser in Coaxial Package with SM-Pigtail FEATURES • Designed for fiber optic networks • Laser diode with Multi-quantum well structure

l30 diode smd

Abstract: JJ SMD diode smd diode E1
Contextual Info: SIEMENS STH61008G/N/Z 1300 nm DFB Laser in Coaxial Package with SM-Pigtail, with Optical Isolator for 2.5 Gbit/s Application Dimensions in inches mm .676(17.2) .597(15.2) max 0 .236 (6.0) Pinning MD CD LD 1.77 max. (45.0) Fiber Optics Components Laser Diodes

SFH 263

Contextual Info: SIEMENS STH61004G/N/Z STH61005G/N/Z Fiber Optics Components Laser Diodes 1300 nm DFB Laser in Coaxial Package with SM-Pigtail, 622 MBit/s Long Reach FEATURES Maximum Ratings • Designed for use in high-speed and long-haul fiber­ optic neworks Output power ratings refer to SM fiber outport. The operating tem­

1NS711

Abstract: ll5711 BAS70 MELF BKC Semiconductors
Contextual Info: SOT-23 Plastic SMD Schottky Diodes * for duals add Applications 04,05 & 06 suffix Excellent MOS protection. Efficient portable system battery isolator. Used in small fast motor applications such as CD ROMs and hard disk drives. Features • • • • •

Contextual Info: SCHOTTKY BARRIER DIODE C20T03QL C20T03QL-11A 20A/30V FEATURES o | SQUARE-PAK | TO-263AB SMD P ackaged in 24mm T ape and Reel : C 2 0 T -Q L O Tabless TO-220 : C 20T-Q L-11A ODual Diodes—Cathode Common OLow Forw ard V oltage Drop o High Surge Capability

JJ SMD diode

Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W
Contextual Info: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package

Contextual Info: SIEMENS K 0 M 2 1 08 5 x 5 Silicon PIN Photodiode Array FEATURES • Suitable for use in the visible light and near infrared range • Low noise • Short switching time typ. 10 ns • Every single diode can be activated D im ensions in inch e s (m m ) Chip position Epoxy resin transparent