JMB 363 Search Results

1771-CJ

Abstract: ss100 transistor PLC-2 Communication cables pin diagram 178-442 DF1 PROTOCOL Allen-Bradley cvim 1784-T35 rack 1771-DA 6008-SI 2801-NC17
Contextual Info: ALLEN-BRADLEY Bulletin 5370 CVIM Configurable Vision Input Module Communications Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the Application,

Allen-Bradley cvim

Abstract: CD1234 5370-CVIM Allen-Bradley OCR
Contextual Info: Important User lnforma tion Solid-state equipment has operational characteristics differing from those of electromechanical equipment. “Application Considerations for Solid-State Controls” Publication SGI-1.1 describes some important differences between solid-state equipment and hard wired

Contextual Info: N AMER PHILIPS/DISCRETE _ L l_ TDD D bb53T31 001,03TM T • BYV60 SERIES t:o2->7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-238 envelope, featuring fast reverse recovery times with soft recovery characteristics.

Contextual Info: N AMER PHILIPS/DISCRETE b^E bbS3T31 003Dbb5 Ebl * A P X D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

b0945

Abstract: bd947 BD944 BD945 BD943
Contextual Info: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA

D 1991 AR

Abstract: BD945
Contextual Info: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

Contextual Info: N AUER PHI L I P S / D I S CR E T E □ bE D bb53T31 DD1SE17 1 RZ1214B65Y T - 3 3 - 5 ~ PULSED M IC R O W A VE POWER TRANSISTOR N:P-N silicon microwave power transistor for use in a common-base, class-B wideband amplifier and operating under pulsed conditions in L-band radar applications.

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Contextual Info: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management

BDT96

Contextual Info: BDT92 BDT94 BDT96 PHILIPS INTERNATIONAL SbE D • 7110fi2b 0043332 447 ■ P H I N T-3J-Z1 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications.

BD132

Abstract: FE21
Contextual Info: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P tran sisto r in a SOT-32 plastic package fo r general purpose, m edium power applications. N-P-N com plem ent is BD131. Q U IC K R EFE R E N C E D A T A “ v CBO max. 45 V C o lle c to r-e m itte r voltage open base

BYV60

Abstract: M1049
Contextual Info: N AMER PHILIPS/DISCRETE _LL TdF T bbS3T31 001.03^4 T BYV60 SERIES FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-238 envelope, featuring fast reverse recovery times w ith soft recovery characteristics. They are prim arily intended fo r use in a.c. m otor control systems as an anti-parallel diode to switching

BYV60

Contextual Info: N AMER PHI LI PS/ DI SC RE TE 11 TDD bti53li31 Dm, 03=14 1 D BYV60 SERIES V ô3 - i 7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-238 envelope, featuring fast reverse recovery times w ith soft recovery characteristics.

BUZ94

Abstract: mx d 362
Contextual Info: PowerMOS transistor_ BUZ94- N AMER PHILIPS/DISCRETE - — - — . “ OtE D • ^1=53^31 DOmt.75 4 ■ " “ r-3 7 -1 3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a

bd947

Abstract: b0945 BD945 m lc 945 BD943 BD944
Contextual Info: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

BUK455-600B

Abstract: transistor buk455 Philips 34D
Contextual Info: PHILIPS INTERN ATI ONAL bSE D m 711GÛ2b 0Db4101 7T5 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK455-600B

Abstract: LG 631
Contextual Info: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended fcr use in Switched Mode Power Supplies SMPS , motor control, welding,

Diode 10aic

Abstract: BUK455-600B philips EBL 31
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 OGaabbS Ebl H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in

BUK455-600B

Abstract: BUK455 600B
Contextual Info: N AI1ER P H I LI PS /D I SC RE T E bTE D • bbS3^31 003QbbS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in Switched Mode Power Supplies

BUW11

Abstract: BUW11A buw11 transistor philips rf transistors buw111
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW11 ; BUW11A High-voltage, high-speed, glass-passivated npn power transistors in a S0T93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.

BUK652R0-30C

Contextual Info: BUK652R0-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Contextual Info: BUK661R6-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Contextual Info: LF PA K 56D BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

Contextual Info: BUK661R6-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been