JMB 380 Search Results

2030p1

Contextual Info: SC18_1999_.book : SC18_CHAPTER_5_1999 1 Wed May 12 11:40:55 1999 CHAPTER 5 THERMAL CONSIDERATIONS page Introduction 5-2 Part one: Thermal properties 5-2 Part two: Worked examples 5-7 Part three: Heat dissipation 5 - 15 SC18_1999_.book : SC18_CHAPTER_5_1999

Contextual Info: CHAPTER 5 THERMAL CONSIDERATIONS page Introduction 5-2 Part one: Thermal properties 5-2 Part two: Worked examples 5-7 Part three: Heat dissipation 5 - 15 Philips Semiconductors Discrete Semiconductor Packages Thermal considerations Chapter 5 INTRODUCTION The perfect power switch is not yet available. All power

heatsink design

Abstract: pulse load calculation formula pulse load calculation formula for single pulse SC18
Contextual Info: DISCTETE SEMICONDUCTORS DATA SHEET Chapter 5 Thermal considerations Discrete Semiconductor Packages File under Disctete Semiconductors, SC18 July 1997 Philips Semiconductors Discrete Semiconductor Packages Thermal considerations Chapter 5 INTRODUCTION The perfect power switch is not yet available. All power

1771-CJ

Abstract: ss100 transistor PLC-2 Communication cables pin diagram 178-442 DF1 PROTOCOL Allen-Bradley cvim 1784-T35 rack 1771-DA 6008-SI 2801-NC17
Contextual Info: ALLEN-BRADLEY Bulletin 5370 CVIM Configurable Vision Input Module Communications Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the Application,

Contextual Info: N AUER PHILIPS/DISCRETE t.'lE D bbS3T31 DD2fl51E 47b H A P X BUV298 V BUV298A(V) SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supply.

SOT-227A

Abstract: BUV298 BUV298A BUV298AV BUV298V
Contextual Info: PHILIPS INTERNATIONAL HSE D Q 711002b 0031137 3 Q PHIN BUV298 V BU V298A(V) ^ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.

PBYR1045

Abstract: PBYR1645 PBYR2045CT PBYR2045CTB
Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR2045CT, PBYR2045CTB series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance

BUV298A

Abstract: BUV298 T227A
Contextual Info: I I P H I L IP S INTERNATIONAL 4SE D E3 7 1 1 0 0 2 b 0 0 3 1 1 3 7 3 E3PHIN BUV298 V BUV298A(V) T-33-/S SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.

BUV98

Abstract: BUV98A BUV98AV BUV98V sot227a
Contextual Info: I I N AMER PHILIPS/DISCRETE b^E » • bbSB'iai DQSÔSÜ3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl DQSflSDB MbB BUV98 V BUV98A(V) b^E » SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supplies.

PHP45N03LT

Abstract: php45n03
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP45N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance

Contextual Info: Product specification Philips Semiconductors Rectifier diodes PBYR2045CT, PBYR2045CTB series Schottky SYMBOL FEATURES • • • • • QUICK REFERENCE DATA VR = 40 V/ 45 V Low forward volt drop

PHW80NQ10T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHW80NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 80 A

PSMN040-200W

Abstract: PSMN040200W
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN040-200W SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 50 A

Contextual Info: l N AUER PHIL IPS/DISCRETE 25E D ^ 5 3 1 3 1 00227b? 5 • BYW31 SERIES TZOZ - i 9 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

Contextual Info: N AMER PHILIPS/DISCRETE bb53^31 OOE^SH? BLW 9 7 b'lE D IAPX Jl H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance

irf630

Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A

BYW31

Contextual Info: BYW31 SERIES 2 _s_ T ~ 0 3 r J . 9 . PHILIPS INTERNATIONAL 7 1 1 Q Ö E b 0 0 4 1 S 7 2 OOO « P H I N SbE » ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

t0319

Abstract: m1532 BYW31 BYW31-50
Contextual Info: Ir AUER ESE P H IL IP S /D IS C R E T E D • 1^53=131 0G 227b7 5 ■ BYW31 SERIES 7 T Û 3 -¿ 9 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

PSMN015-100B

Abstract: PSMN015-100P transistor 100p
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V

PSMN015-100B

Abstract: PSMN015-100P SOT404
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V

M1533

Abstract: m1532 M1527 TA 1319 AP BYW31-50 BYW31-50U BYW31
Contextual Info: BYW31 SERIES T P HILIPS IN T E R N A T I O N A L 711DÖEb 5bE D 004157E - 3 - L H PHIN OOO ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

BYQ60EW

Abstract: 11175 116
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYQ60EW series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance

BT136 motor

Abstract: BTA204 Series D 500D 500E 600D 600E 800E BTA204M BTA204S
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BTA204S series D, E and F BTA204M series D, E and F Three quadrant triacs guaranteed commutation Product specification December 1998 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation