JR 209 Search Results

Contextual Info: TECHNICAL BULLETIN TB-2095 Chargebuster Jr. H/O with Emitter Cassette Installation, Operation and Maintenance Made in the United States of America that have large capacitance, like people and carts; however, ionizers should be considered as a method for charge

4558D

Abstract: PC451G 4560d 4556D 4570C 741C c4741g 4558d operational amplifier NEC uPC451C 2904D
Contextual Info: OPERATIONAL AMPLIFIER CROSS REFERENCE g jR c 3 E q u iv a le n t P ro d u c ts by O th e r C o m p a n ie s N JR C F u n ctio n s Types N •S T • ] M itsubishi S ingle S upply T ype N JM 2902M N JM 3403A D LM 2902N S M C 3403N fi P C 4 5 1 G MPC452C P PC 3403C

TB-2095

Abstract: ionizer
Contextual Info: TECHNICAL BULLETIN TB-2095 Chargebuster Jr. H/O with Emitter Cassette Installation, Operation and Maintenance Made in America that have large capacitance, like people and carts; however, ionizers should be considered as a method for charge neutralization in cases where grounding cannot be achieved.

KL SN 102 94v-0

Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results

LAD1 12v 8 pin relay

Abstract: 23a1ad relay lad1 lad1 12v relay CJD1 lm 5532 Intel i960J Conversion from PCI 9054 AB to AC
Contextual Info: / y y Jr iiillIK^ PCI 9054 PCI I/O Accelerator November 1998 Version 1.0 l20 Compatible, CompactPCI Hot Swap Friendly PCI Bus Master Interface Chip _ for Adapters and Embedded Systems FEATURES • 3.3V, 5V tolerant PCI and Local signaling supports

NE604 Philips

Abstract: ne604 philips an1991 AUDIO LEVEL INDICATOR VU meter Microphone circuit an1991 audio amplifier using op amp received dynamic range AN199-1
Contextual Info: Philips Components-Signetics Docum ent Application Note Robert J. Zavrel Jr. Author. April 1988 Date RF C om m unications DESCRIPTION Although the NE604 was designed as an RF device intended for the cellular radio market, it has features which permit otherdesign configu­

2806A

Contextual Info: REVISIONS PART NO. ECN # REV DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE - A RELEASED Veena 31/5/05 Shashi 31/5/05 NK 14/6/05 JR 2806A Panel Socket Specifications: Rating : 125V ac 15A. Contact resistance : 50mΩ maximum. Insulation resistance : 100MΩ at DC 500V.

G3VM-355J

Abstract: G3VM-355JR
Contextual Info: MOS FET Relays G3VM-355J/JR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single SOP Package. General-purpose high On-resistance Series Added. • SPST-NO/SPST-NC models with an 8-pin SOP package in the 350-V load voltage series.

JR-101-1

Abstract: JR-101 JR-1011
Contextual Info: REVISIONS PART NO. JR-101-1 ECN # REV DESCRIPTION - A RELEASED DRAWN DATE Ramya 31/5/05 CHECKD DATE APPRVD DATE Shashi 31/5/05 NK 14/6/05 Feature: PCB Mounting • RA panel mount IEC inlet. Specifications: Rating : 10A at 250V. Withstand Voltage : 2000V ac/1 Second.

JR-101S-G

Abstract: JR-101 JR-101SG
Contextual Info: REVISIONS PART NO. JR-101S-G ECN # REV DESCRIPTION - A RELEASED DRAWN DATE Ramya 31/5/05 CHECKD DATE APPRVD DATE Shashi 31/5/05 NK 14/6/05 Specifications: Thickness: Current Rating : 10A 250V ac. 0.8 - 1.2 t X = 20.3 Withstand Voltage : 2000V ac at 1 Minute.

Contextual Info: MOS FET Relays G3VM-355J/JR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single SOP Package. General-purpose high On-resistance Series Added. • SPST-NO/SPST-NC models with an 8-pin SOP package in the 350-V load voltage series.

JR-101

Contextual Info: REVISIONS PART NO. JR-101 PCB Mount ECN # REV DESCRIPTION - A RELEASED Panel-Cut Out DRAWN DATE Ramya 31/5/05 CHECKD DATE APPRVD DATE Shashi 31/5/05 NK 14/6/05 Feature: • Solder terminals 7.3mm x 4.7mm x 0.8mm. Specifications: Contact Rating : 10A 250V ac.

G3VM-355J

Abstract: G3VM-355JR
Contextual Info: MOS FET Relays G3VM-355J/JR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single SOP Package. General-purpose high On-resistance Series Added. • SPST-NO/SPST-NC models with an 8-pin SOP package in the 350-V load voltage series.

Contextual Info: =V . " t • ‘ - " Corr ponents designed to meet the severe mechanical and envi onmental requirements of MIL-C-38999 Series III are now available to Series IV users. Modifications of the con­ nect ;jr are available with EMP protection, incorporating MOV s, diodes or a combination of both.

BZW06

Abstract: BZW06-23B equivalent BZW06-273 equivalent BZW06-154 BZW06-13 BZW06-13B BZW06-15 BZW06-171 equivalent BZW06-37B
Contextual Info: IM TAIWAN SEMICONDUCTOR RoHS COMPLIANCE BZW06 SERIES 600 Watts Transient Voltage Suppressor DO-15 JR . Features ❖ ❖ ❖ ❖ ❖ .140 3.6 .104 (2.6) P lastic package has U nderw riters Laboratory Flam m ability C lassification 94V-0 Exceeds environm ental standards o f M IL-S TD -19500

Multicomp fuse holder

Abstract: JR-101 JR-101-F
Contextual Info: REVISIONS PART NO. JR-101-F ECN # REV DESCRIPTION - A RELEASED DRAWN DATE Ramya 31/5/05 CHECKD DATE APPRVD DATE Shashi 31/5/05 NK 14/6/05 Specifications: Fused IEC Inlet Rating : 10A 250V ac. Withstand voltage : 2000V ac 1 Minute. Insulation resistance : More than 100MΩ at 500V dc .

JR-101-1FS

Abstract: JR-101-1 JR-101-1F Multicomp fuse holder JR-101 29642
Contextual Info: REVISIONS PART NO. ECN # REV DESCRIPTION - A RELEASED JR-101-1FS Snap Fit DATE Ramya 31/5/05 CHECKD DATE APPRVD DATE Shashi 31/5/05 NK 14/6/05 Features: Thickness 1.3 - 2.0t X = 31.6 0.8 - 1.2t (X = 31.4) This data sheet and its contents (the "Information") belong to the Premier Farnell Group

RJR Resistor

Abstract: M83401/01K2001GA M83401/08H1002JC
Contextual Info: B o u rn s _ PRODUCT SELECTION GUIDE Military Sealed Trimmers Model Number Element Technology Cermet W/W Turns Single Size Multi R J/R JR 12 • • RJ 22 • • RJ/RJR 24 • • RJ/RJR 26 • • RJR 28 • • RJ/RJR 50 • • • • RT/RTR 22

Bt102BC

Abstract: CX20201A-3 CX20202A-3 MB40978 TDC1018B7C
Contextual Info: - 283 - t'7 h D — A 3 'S ? Btl08BF300/C20 CX20201A-3 CX20 20 2A—3 MB40978 Bt102BC AD9700BD/BW ? —il B ro o ktre e Analog Devices B ro o k tre e TRW y - - y - — s ± a Jr! I31inn@c TFS +25' C TFS TFS +25' C +25' C TFS 75MSPS 100MSPS min 300/200MSPS

SD-5597-007

Abstract: ON01 5597-NCPB7F en-02ja mxj fpc 5597-NCPB
Contextual Info: 10 A M>4 ì* > i— i i iu i iu i lu i- n jr 49.5 48.25 47 45.75 44.5 43.25 42 40.75 39.5 38.25 37 35.75 34.5 33.25 32 30.75 29.5 28.25 27 25.75 24.5 23.25 22 20.75 I9.5 18.25 I7 15.75 I4.5 13.25 I2 10.75 9.5 MODEL NO. 5597-NCPB7F B i GENERAL TOLERANCES UNLESS SPECIFIED

EE-SX418

Abstract: EE-SX318 GPIA71R EE-SX301 PI-308 EE-SX428 PI-309 PI-142 sx418 cd 4075
Contextual Info: - 330 - SI ^ £ tt ' 7' £ •!' ifS a I mm! i.mm> I fhj max mA' max imA'1 GP1A67L 0.9 - 2.5 GP1A67H 0.9 2.5 - v jr ÎA 7 u R - GP1A71R - - I y IV typ {fts) ty p {fis) (m A ) (0 ) (V ) 5 1.2k 2.2 1.2k 2.2 m in (V ) If m ax (V ) (m A ) H- fi n TuPr ro 50

C937

Abstract: PCR 406 J 74912 saa 1130 saa 1124 1G5.6 YIO 98 2SC4415 5CJ11 Q587
Contextual Info: HITACHI 2 SC4 4 1 5 SILICON NPN EPÌTAXlAl UHF TUNER RF AMPLIFIER _ CftiipWJ I $*^1sb « i llk K —!—1-iìl ' 5J | fcS *I —I I S Ü Ü .L i f » OU! I* « k—L*—^ jr V <a I. CsilKci« 2 tsix £nWK* i &>« «I . ‘.f .r. tl'filj MPAK-4) MAXIMUM COLLECTOR DISSIPATION

KTH-2001

Abstract: KTH-2004 Kings kth2007 military crimp ka-59-69 KA-59-69 military crimp M39012 KA-59-292 KTH-2007
Contextual Info: ,TNC Plugs h tlp :'/w w -w .k in g s c lc ç lra m c s .c o n v •liic plu^* h im ! TNC Plugs '■ y ' V FIGURE 6 B. FIGURE 7 K-GRIP, JR. CONSTRUCTION KINGS PART NUMBER DIMENSIONS CABLING 12 10 98 6:56 PM 1of 3 U IIIII» M i « u y j u j I ^ n n TNC Plugs

Contextual Info: -*r -jr r'“'* Y S X w X v Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A * DSS ^D25 500 V 500 V 12 A 12 A p DS on a 0.4 Q 0.4 N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj V DGR Maximum Ratings = 25°C to 150°C 500 V T j = 25°C to 150°C; RgS = 1 M il