JS 7 DIODE Search Results

Contextual Info: S N 5 4 /7 4S 81 8 8-Bit SERDE Pipeline Register Ordering Inform ation Features/B enefits • High drive capability. Io l = 32 mA Com PART NUMBER PACKAGE TEMPERATURE SN74S818 NS, JS, NL (28) Com SN54S818 JS, W, L (28) Mil • Alternate source to Am29818

D5S4M

Contextual Info: 2 /a v h + - K U 7 S W - I * Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D5S4M 40V 5A >Tjl50°C P rrsm 7 7 V 'J i ffiiE > 7 , llÆ - , lb K > S R S ;H > D C / D C n : y A '- ^ O A H tg I jS f e s Ttt— RATINGS Absolute Maximum Ratings a Storage Temperature

Contextual Info: Outline Ü l T c C D ' ^ - x A - f 7>ß7'J P K. V 3 - V h Shindengen has an abundance of power devices, such K, P - * - K as bridge diode, super fast recovery diode, schottky , K, A 7 - ^ 7 > y X $ , M O S F E T Ü lp p £ * * KIX ^JSä., ^ 6it Ü t f t f

4518 counter truth table

Contextual Info: SbE D • 7 ^ 8 3 7 0D40MM3 IflT ■ SG TH _ G L M54/ 74HC4518 M54/ 74HC4520 SGSTHOMSON ■[LiraMD0 S S G S-THOMSON , T - jS - 2 3 - r S HC4518 DUAL DECADE COUNTER HC4520 DUAL 4 BIT BINARY COUNTER ■ LOW POWER DISSIPATION

Contextual Info: RECTIFIER, January 7, 1998 up to 6kV, 260mA, 5|JS TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE • • • • • M50A M60A QUICK REFERENCE DATA Vr = 5kV - 6kV

HIGH VOLTAGE DIODE 3kv

Contextual Info: is t i January 7, 1998 RECTIFIER, up to 3kV, 600mA, 2.5|JS 1N3645 1N3646 1N3647 SM20 SM25 SM30 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE Q UICK REFERENCE DATA

Contextual Info: pjj .— j RECTIFIER, up to 1kV, 3.5A, 2.5|JS 3PM2 3PM6 3PM4 3PM8 3PM0 January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE • • • • • QUICKREFERENCE DATA

TCA150

Contextual Info: 7 2 9 4 6 2 1 POWEREX INC D E § 7 B cl 4t,21 D0QE171 y / jp iA M n E r* ^ V V M Ec fflE A 3 f 7^ 33 JS ~ " D66EV Fast Switching Single Darlington Transistor Module D66DV Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 50 Amperes

Contextual Info: APEX MICROTECHNOLOGY CORP SIE D 007flb3b OOOOTbD T '7 ^ - 2 3 FEATURES • • • • • • 7 HIGH SLEW RATE - 200V/ps FAST SETTLING TIME - .1% in 1/js PA84S FULLY PROTECTED INPUT - Up to ±150V LOW BIAS CURRENT, LOW NOISE - FET Input WIDE SUPPLY RANGE - ±15V to ±150V

D 843 Transistor

Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv
Contextual Info: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843

Contextual Info: 190239 Rev 0; 7/94 JV K Æ A A JS A 50m A, Frequency-Selectable, Sw itched-C apacitor Voltage Converters _A p p licatio n s Portable Computers Medical Instruments Interface Power Supplies Hand-Held Instruments Operational-Amplifier Power Supplies

D66DV7

Abstract: POWEREX INC TCA 700 y D66DV D66EV D66EV7
Contextual Info: 7 2 9 4 6 2 1 POWEREX INC D E § 7 B cl 4 t , 2 1 D0QE171 3 f 7 ^ 3 3 JS ~ D66DV D66EV 'G W E R E X Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Fast Switching Single Darlington Transistor Module 5 0 A m p e re s 5 0 0 -6 0 0 -7 0 0 V o lts

IRF621

Abstract: IRF620
Contextual Info: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: •I QOOflDlQ 5T6 ■ R H M — K /L ig h t Emitting Diodes v E.MM'7>7° 2X5mm A P w fc I SLT-25 Series S e rie s Triangular Lamps • #Jfi>l'äs|3|/Dim ensions (Unit : mm) S L T -2 5 y U - X l i , S fttfim c G a P jS 2 X 5 m m « - ^ > 2 H M iiS J Jgi7>7T't'c, A 7 «Dirt

Contextual Info: y a v h 7 Schottky Barrier Diode S Twin Diode MMrtfèm D10SC4M OUTLINE DIMENSIONS C a se : ITO-220 40V 10A • T j 15013 • P rr sm ffl & •S R g • D C / D C H V A '- ^ 0 A * ü •m m . > f - h . • a s , x — s > 7 u m s i •i&Ë&JS^AElfë Absolute Maximum Ratings

Contextual Info: 3QE » • 7 ^ 2 C 2 3 7 0D30734 H ■ ^ p 3 > °M £ fZ J SCS-THOMSON Ä 7# [M ^ m ie T T IM O tg S IR FK 4 H250 'T js S-THÖMSÖN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE IR FK4H 250 V dss Ros on) Id 200 V 0 .02 1 Q 108 A . ■ . ■

SIR-320ST

Contextual Info: • 7Ö E f l c3T ^ iz > V /Sensors OOOfllbS STt. I RHM SIR-320ST SIR-320ST GaAs Infrared Light-Emitting Diode • /Dimensions Unit : mm SIR-320ST tJ, jS R flfflS B ii.lL T 'M !? mmo GaAs m m y t ? < * - k ? t 0 A ''iii< , y U - 1> § ? 3 te S -P lc 3 1

LZL -60-C

Abstract: Sony ICX205AL ivo 9140 ICX205AL sony kv LSH20 mt 1392 8e01 SONY 171 V32B
Contextual Info: SONY ICX205AL IC X 205A L i, * f^ 8 m m y ? 7 ( 1 /2 Ü Í ^ J 1 4 5 ^ ^ > M C C D @ fë itiii? ï^ 4 to ¿ 0, ^)l/7.5^>-e ä fc, iÌ jì È Kÿ 7 h -t — K i 30 f r a me / s e c ^ ^ jS ñ T fb ^ l-o '7 L, -F > Ä - Ä ^ v t y ? Í S L ‘Ü 7 A ':7 V'

Contextual Info: 2DI5OZ-12O 50a > \.— V POW ER T R A N S IST O R M ODULE : Features • ¡SW/ï High Voltage • 7 V —f r 'f !J > 9 9 -4 • A S O é '- jS ^ • ÎÊS lJfÎ KF*9i Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type Applications

t 317 transistor

Abstract: bjc 2100 diode um 42A smd diode sm 3c kd smd transistor IOR 451
Contextual Info: PD - 91729 International IÖR Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High sh o rt circu it rating op tim ized fo r m otor control, tsc = 1 0|js, V c c = 7 2 0 V , T j = 125°C,

Contextual Info: HARRIS SEMICOND SECTOR 37E D • l4302271 002SM47 7 H H A S •' _ Technical Data Advance Information CD54/74AC161, CD54/74AC163 CD54/74ACT161, CD54/74ACT163 'T A S - Z Z - O Z PO P1 SPÎ — « -2 sra — pe — w -JS . Synchronous Presettable Binary Counters

NPN DARLINGTON POWER module isotop

Abstract: t333b my50 ESM7545DF ESM7545DV
Contextual Info: ESM7545DF ESM7545DV r Z 7 SG S-THO M SO N ^ 7# iMiiKBiRiûiiuasiriaepinEgî T lò - 'jS ' S S S-THOMSON NPN DARLINGTON POWER MODULE . . . HIGH C U R RENT PO W ER BIPO LAR M O DULE V E R Y LO W Rth JU N C TIO N CASE SPECIFIED AC C ID E N TA L O V ER LO A D

ERG75

Abstract: H150 T810 T930 EB4P
Contextual Info: ERG75 45A JS S S a fc ^ - f * - K : O u tlin e D r a w in g s FAST RECOVERY DIODE M f t - R • F e a tu re s : t — Pl aner chip • V 7 Y i)1j '<1)— Soft recovery type • Stud mounted : Applications • Switching power supplies Free-wheel diode •

Contextual Info: y a 7 K Schottky Barrier Diode ÿ ' - f i — K i v u — vu Diode Module OUTLINE DIMENSIONS D360SC5M Case : Modules 50V 360A ia a •S V f • * S JS R » S •D C /D C • IC x T .^ - Mfcfèm RATINGS •ifeë&tJI^/Ëfë Absolute Maximum Ratings « Item Storage Temperature