JS SOT23 Search Results

JS SOT23-3

Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FEATURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G

sd1113 teledyne

Abstract: SD1112 2sd1102 sj 76a
Contextual Info: TELEDYNE COMPONENTS •. SÛE D . , , ■ ATlTbDB G0Gb4Gla T ■ — . T-29-25 T F l CD II^ JsÆ \ ^ Z, SD1102, SD1112, SEMICONDUCTOR S D 1113 N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETs ORDERING INFORMATION

Contextual Info: DUAL SUPPLY VOLTAGE MONITOR ZSMD5333 ISSUE 1 - NOVEMBER 1995 DEVICE DESCRIPTION FEATURES The ZSMD5333 js a dual three terminal under voltage monitor for use in microprocessor systems. The device is designed to monitor both 5 volt and 3.3 volt supplies containing two

IRF621

Abstract: IRF620
Contextual Info: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: jp f 'js E I X / I T E O H 5mA CAPLESS CHARGE PUMP SC1460 Today’s Results.Tor PRELIMINARY-July 6, 1999 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1460 is a versatile charge pump designed for use in battery operated power supply applications re­

4392

Abstract: 2N4393 2N4391 marking 18w sot23 18W SOT23 PN4391 SST4391 SST4392 SST4393 SOT23 MARKING N03
Contextual Info: Colo^ÎC N-Channel JFET Switch CORPORATION \J 2N4391 - 2N4393/PN4391 - PN4393/SST4391 - SST4393 A B S O L U T E MAXIMUM RATINGS FEATURES Ta = 25°C unless otherwise noted • r<js(on)<300 O h m s (2N4391) • G ate-Source or Gate-Drain V o lt a g e . -40V

LB 122

Abstract: sc 1365 MPS571 MPS571B LB122
Contextual Info: 1SE D | MOTOROLA MQ TO R C LA fc>3b72SM SC b | XSTRS/R F T -2 1 -JS "“ • SEM ICOND UCTOR TECHNICAL DATA _ MPS571 MMBR571 The RF Line N P N Silicon High Frequency Transistors LOW N O ISE HIGH RF GA IN . designed for low noise, wide dynamic range front-end amplifiers and low-noise

GL24

Abstract: marking code L05 SOT 23
Contextual Info: v G en e r a l S e m ic o n d u c t o r % GL05 thru GL24 Low Capacitance TVS Diode For High-Speed Data Interfaces TO-236AB SOT-23 Stand-off Voltage 5 to 24V Peak Pulse Power (8/20[js) 300W i •1 22 (3 .1) .110 2.8 Mounting Pad Layout .016(0.4) _ Ë Top View

MAX4180ESA

Contextual Info: , 19-1221; Rev 1; 8/97 Single/Dual/Quad 270M H z, 1mA, SOT23, C urrent-Feedback Am plifiers w ith Shutdown The M A X 4 1 8 0 -M A X 4 1 87 fe a tu re 0 .0 8 % /0 .03 ° d iffe re n ­ tial gain and phase errors, a 20ns settling tim e to 0.1% , and a 45 0 V/|js slew rate, m aking th e m ideal fo r highp e r f o r m a n c e v id e o a p p lic a t io n s . T h e M A X 4 1 8 0 /

spice germanium diode

Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
Contextual Info: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23

transistor npn d 2058

Abstract: PBR941 UHF transistor GHz K 2058 transistor AA 9943 MDA871
Contextual Info: Philips Semiconductors Product specification UHF wideband transistor PBR941 PINNING - SOT23 FEATURES • Small size PIN DESCRIPTION • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector • Gold metallization ensures excellent reliability.

MARKING W2 SOT23 TRANSISTOR

Abstract: PBR951 C 2577 transistor B 1566 Transistor UHF transistor GHz Transistor B 1566 top marking Z0 sot23 F 9016 transistor 9016 transistor specification FF402
Contextual Info: Philips Semiconductors Product specification UHF wideband transistor PBR951 FEATURES PINNING - SOT23 • Small size PIN DESCRIPTION • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector • Gold metallization ensures excellent reliability.

Contextual Info: 19-1089; Rev 2; 8/97 Single/Dual/Quad, W ide-Bandwidth, Low-Power, Single-Supply, Rail-to-Rail I/O Op Amps F e a tu re s ♦ 5-Pin SOT23-5 Package MAX4130 With their rail-to-rail inp ut co m m on-m ode range and output swing, the M AX4130-M AX4134 are ideal for lowvoltage, single-supply operation. Although the minimum

RD SOT23

Abstract: FLLD258
Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 - JANUARY 1996 FLLD263 O 3 SOT23_ PART M AR KIN G DETAIL - D63 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL. R e p e titiv e Peak Reverse V o lta g e A v e ra g e R e c tifie d F o rw a rd C u rre n t

Contextual Info: FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - OCTOBER 1995 CO M PLEM EN TARY TYPES - F M M TA 12 - NONE F M M TA 13 - F M M TA 63 F M M TA 14 - FM M TA 64 PARTM ARKING DETAILS - FM M TA 12 - 3W FM M TA 13 - 1M F M M T A 1 4 - 1N

Contextual Info: PJSLC05 SERIES ULTRA LOW CAPACITANCE SINGLE TVS FOR HIGH SPEED DATA LINES This Transient Voltage Suppressor is intended to Protect Sensitive Equipment against Electrostatic Discharge and Transient Events as well to offer a Miminum insertion loss in high speed data communication transmission line ports used in Portable Consumer,Computing

marking code CM

Contextual Info: Central CMPS5061 CMPS5062 CMPS5063 CMPS5064 S e m ic o n d u c to r Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and sensing circuit applications.

Thermal considerations for SOT89

Abstract: BD136 BD226 BDX35
Contextual Info: Philips Semiconductors Thermal Impedance Curves General THERMAL IMPEDANCE CURVES Transistor thermal impedance curves for various packages and duty cycles are shown in Figures 1 to 23 inclusive. MGL193 103 handbook, full pagewidth Zth j-a δ=1 0.75 0.5 (K/W)

L-442

Abstract: l43d L442
Contextual Info: SOT23 SILICON EPITAXIAL SOHOTTKY BARRIER DIODES ISSUE 1 - SEPTEMBER 1995 , 1 o c r ic c I ' O 1 A i f 2 3 t 3 \ 2 3 2 BAT54 BAT54A BAT54S BAT54C SINGLE COMMON ANODE SERIES COMMON CATHODE Pin Configuration L4Z L42 L44 L43 Partmarking Detail D evice T ype FEATURES: Low VF & High Current Capability

Contextual Info: BAS 19 BAS20 BAS21 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES PIN CONFIGURATION P A R T M A R K IN G D E TA ILS A BAS19 A8 B A S 2 0 . A 8 1 B A S 2 1 .A 8 2 3 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L C ontin uou s Reverse V oltag e