JS T90 Search Results

Contextual Info: 650/55 al High Performance Operational Amplifier F e b ru a ry 1 9 9 0 F e a tu re s Slew R a te . * e s c rip tio n .'T 5 v / js • B an dw id

transistor F370

Abstract: t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674
Contextual Info: NEC j m ^ T iv rx A ij F M f a - t R F , M IX . , h ^ C O N V . , X ^ O S C ./ B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. o F M f a - j- c o m m 'it m m , M W L&&&M , m m m m W B 0 / PACKAGE D IM EN SIO N S t i r Unit : mm f t M T ’t o

G2RE

Abstract: Aromat JR1 nais jw wj116 OMRON G5L omron g2e WJ107 Aromat jw AZ820 MODEL 971
Contextual Info: Model Cross Referrence WENZHOU WANJIA ELECTRIC EQUIPMENT CO.,LTD MODEL CROSS REFERENCE Nos. Wanjia 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 MSD OEG Omron WJ102 OUA G2E WJ103 OUAZ WJ104 OVR WJ105 OJ/OJE Zettler 842 G5V-2

G2RE

Abstract: OMRON G5L Aromat JR1 nais OMRON G4u omron g2e 792H Wanjia WJ107 Nais JS Omron Cross Reference
Contextual Info: Model Cross Referrence WENZHOU WANJIA ELECTRIC EQUIPMENT CO.,LTD MODEL CROSS REFERENCE Nos. Wanjia 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 MSD OEG Omron WJ102 OUA G2E WJ103 OUAZ WJ104 OVR WJ105 OJ/OJE G5V-2 WJ107 G5L OUDE W178 WJ110 AZ820 / AZ822

st 85500

Contextual Info: Bulletin 127105 rev. A 09/97 Inte rn atio n a l I ö R Rectifier T.RIA SERIES MEDIUM POWER PHASE Power Modules CONTROL THYRISTORS 50 A 70 A 90 A Features • E le ctrica lly isolated base plate ■ Types up to 1600 V RRM ■ 3 5 0 0 V RMg is o la tin g v o lta g e

1SS136 T-77

Contextual Info: $ -i # — K /D io d es 1SS136/1SS137/1SS138 1SS136/1SS137/1SS138 Silicon Epitaxial Planar Ultra-High Speed Switching Mini-Diodes • £f- \l';i!3l/DiiTiensions U n it: mm 1) S / J 'S T ' & 5 o 2) 3) S i l J t (trr= 2 n s Max.) T '& - 5 0 4) (V f = 0.85V Typ)

AT/MCR18

Contextual Info: Resistors MCR10/MCR18 MCR 1 0 1 / 10 W MCR 1 8 ( 1 /8 W) Rectangular Chip Fixed Resistors • £i-JK\|'$£0 /'Dim ensions (U n it: mm) 71 7 ^ ffiftS S M C R v U - X ' l i , T7; ^ 96%(7) m s d s t L T S s e tt, i'* X fo Z I $ - ©* 3 11 fe e , 1 *1 1 4 0

Contextual Info: Bulletin 127105 rev. A 0 9 /97 International IGR Rectifier T.RIA SERIES MEDIUM POWER PHASE CONTROL THYRISTORS Power Modules 50 A 70 A 90 A Features • Electrically Isolated base plate ■ Types up to 1600 V RRM ■ 3500 V RMg Isolating voltage ■ Simplified mechanical designs,

NEC Relay MR31

Abstract: OMRON G4s NEC MR31 RELAY NEC Relay MR31 24 nec NEC MR31 omron relay G5L RELAY OMRON G4s MR72 NEC MR72 Relay MR31H
Contextual Info: Breakdown Voltage Size mm LD 20.3 x 7 x 15 PCB LA 24 x 12 x 25 PCB LK 24 x 11 x 25 PCB LK-S 24 x 11 x 25 PCB LK-P 24 x 11 x 25 PCB JQ JW 20 x 10 x 16 28.6x12.8x20.4 Load Current (100k ops) Creepage Distance 1A 3Amps 5Amps 6mm 6mm 750 Vrms 4,000 Vrms 2A 3Amps

TAG thyristor

Abstract: wiring VAG relay
Contextual Info: T1SP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS Copyrights 1997, Power Innovations limited, UK SEPTEMBER 1985 - REVISED SEPTEM8EH 1997 PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION Dual Voltage-Programmable Protectors

2SK49

Abstract: JA BJT P514 t430 transistor transistor T600 p745 h me 218l p745 Transistor F030 P460
Contextual Info: NEC j m ^ T ix t x J u n c t io n Field E ffe ct T r a n s is t o r A 2SK49 N-Channel Silicon Junction Field Effect Transistor FM Tuner *1- ° i&MM'SLtë.ÿji'P-y V t f í O F M f ^ - B 0 / P A C K A G E DIM ENSIO NS Unit : mm O |yfs| ^ § ^ o I y fs I = 2 . 8 m ü T Y P . ( V d s = 5 . 0 V ,

KSD 302

Abstract: J119 J103 j104 schrack ra J112 equivalent omron g5lb -1-25 j152 DS2YE HAT902
Contextual Info: CIT Cross Reference Guide American Zettler Series Omron Series Tyco / P&B / OEG / Schrack Series Hasco Series Song Chuan Series Nais / Aromat / Panasonic Series Fujitsu / Takimisawa Series IDEC Series CIT Cross Reference to American Zettler Series American Zettler

sp8600

Contextual Info: 12E D PLESSEY SEMICONDUC TORS • 7220513 DQ102b7 2 ■ T ' - u ,s - r t - o s SP8600AC 250MHz 4 FIXED MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B T h e SP8600 is an asynchronous ECL counter with open collector outputs. It requires external input bias and an A C

D 16027 G

Abstract: 165-V4
Contextual Info: s G S - T H O H S O N 0?E D | 7 ^ 5 3 7 □ 0 1 5 CID5 1 I LOW POWER SCHOTTKY iT 7 4 L S 1 2 INTEGRATED CIRCUITS ^ 6 7C 16027 T~42>-/S _ PRELIMINARY DATA TRIPLE 3-INPUT NAND GATE DESCRIPTION The T54LS12/T74LS12 is a high speed TRIPLE 3-INPUT NAND GATE with open collector output

SP8719

Abstract: plessey capacitors
Contextual Info: PLESSEY 12E SEMICONDUCTORS D • 7S2QS13 00103bE 7 A PLESSEY W S e m ico n d u cto rs. T -M s-iq -o q SP8719AC 520MHz -r- 80/81 TWO MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B TheSP8719 -^80/81 is a 50mW programmable divider with a maximum specified operating frequency of 520MHz over

Contextual Info: 6EC PLESSEY SEM ICONDS 121 1 • 37b»S25 0010275 T H P L S B 'F 4 S - i^ o s S P 8611A C 1300MHz -f- 4 FIXED MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B T he SP8611 is an asynchronous ECL divide by fourcircuit, with ECL com patible outputs which can also be used to drive

Contextual Info: P LESSEY SEMICONDUCTORS 12E: D 7220513 001D253 S • A PLESSEY W S e m ic o n d u c to rs. SP8605AC 1000MHz ^ 2 FIXED MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B The SP8605 is an emitter coupled logic divider with ECL III compatible outputs. This device features AC coupled inputs

Contextual Info: HYU NDA I HV29F08° 8 M eg ab it 1M x 8 , 5 V o lt-o n ly , Flash M em o ry KEY FEATURES 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption - 15 mA typical active read current

Contextual Info: >49 Y U « I U N n 11 U A l l l I HY29F400 4 Megabit 512Kx8/256Kx 16 , 5V Only, Flash Memory KEY FEATURES • ■ ■ ■ ■ ■ 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 45 ns

Contextual Info: •HYUNDAI HY29F800 8 M egabit 1M x 8/512K x 16 , 5V Only, Flash M em ory KEY FEATURES • ■ ■ ■ ■ ■ 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption

T9016

Contextual Info: jJL PRODUCT J± 51 JÜ _ NO. 9 3 7 6 4 -4 * 4 4 .4 5 1 .27X35 ±0.1 NO.72 POS. jì il A / H .8 ± 0 .0 5 *— •0 »U.öiU o o - f« k - 1 .2 7 ± 0 .0 5 jL 2 .5 4 ± 0 .0 5 —^ 4 4 .4 5 (1 .27X35)±0.1 11 -65.0± 0.1 |s RECOMMENDED PCB LAYOUT

Contextual Info: •HYUNDAI HY29F800 8 M egabit 1M x 8/512K x 16 , 5V Only, Flash M em ory KEY FEATURES • ■ ■ ■ ■ ■ 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption

Contextual Info: PLESSEY SEMICONDUCTORS 12E D • 7220S13 0D1D335 4 " P -q s -w -o £ SP8685AC 500MHz -r 10/11 TWO MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B The SP8685 is an compatible outputs. control inputs, PE1 when both are 'low' ECL variable modulus divider, with 10K

SP8792A

Contextual Info: 1EE PLESSEY D • 7SSGS13 OQlQ3bt 4 ■ SEMICONDUCTORS " T - H S - l 0! - O S SP8792AC 200MHz 80/81 TWO MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B The SP8792 is a low power programmable -r80/81 counter which operates over the full Military temperature