JSS SOT23 Search Results

Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

marking JSs

Abstract: bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95
Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

BAS20 SOT23

Abstract: bas21 jss BAS19 BAS20 BAS21
Contextual Info: BAS19.BAS21 3 Silicon Switching Diodes
High-speed, high-voltage switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking Pin Configuration Package BAS19 JPs 1=A 2 = n.c. 3=C SOT23 BAS20 JRs 1=A 2 = n.c. 3=C SOT23 BAS21 JSs 1=A 2 = n.c. 3=C SOT23 Maximum Ratings

Contextual Info: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch Type M arking O rdering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin C onfigu ratio n Package1) 1 r^ i 3 o-^ 1 -o

BAS 20 SOT23

Abstract: DIODE BAS 21 sot-23 JSs
Contextual Info: BAS 19 . BAS 21 Silicon Switching Diodes 3
High-speed, high-voltage switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking Pin Configuration Package BAS 19 JPs 1=A 2 = n.c. 3=C SOT-23 BAS 20 JRs 1=A 2 = n.c. 3=C SOT-23 BAS 21 JSs 1=A 2 = n.c. 3=C

Contextual Info: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch T yp e M arking O rdering C o d e tape and reel B A S 19 B A S 20 BAS 21 JPs JR s JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin Configuration P a ck a g e1» 1-^ IsJ-0

BAS21 SOD323

Abstract: BAS21 marking JSs JSs sot23 JSs diode jss sc74 bas21 jss BAS21-03W BAS21U SC74
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

marking JSs

Abstract: bas21 BAS21 SOD323
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

BAS21 SOD323

Abstract: marking JSs BAS21 BAS21 SOT23 Marking code jSs BAS21U JSs marking code 65 marking sot23 marking code ag BAR63-03W
Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking BAS21 BAS21-03W BAS21U SOT23 SOD323 SC74 single single parallel triple

BAS21

Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

TRANSISTOR SMD MARKING CODE JSs

Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with

Marking code jSs

Abstract: BAS21 SOD323 BAS21 JSs marking code BAS21 SOT23 bas21 infineon BAS21-03W BAS21U BCW66H SC74
Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking

Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! " # ,  , , !    ! Type Package Configuration Marking

sot-23 Marking LG

Abstract: code 619 sot-23 CMPF4416A transistor marking code lg
Contextual Info: Central" CM PF4416A sem iconductor Corp. SILICON N-CHANNEL J F E T DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M P F 4 4 1 6 A type is an epoxy m olded NChannel Silicon Junction Field Effect Transistor m anufactured in an S O T -2 3 case, designed

transistor 6D sot23

Contextual Info: ÌE^b3k7254 M O T O R O L A SC -CXSTRS/R F* 6367254 MOTOROLA SC 96D 8 2 0 0 7 CXSTRS/R F t Symbol Value U nit Drain-Source Voltage Vos 25 Vdc Drain-Gate Voltage Vd g 25 Vdc VGS r) 25 Vdc !G 10 mAdc Symbol Max U nit PD 225 mW 1.8 mW/°C RflJA 556 °C/mW PD

JSs sot23

Contextual Info: BSS123LT1* M A X IM U M R A TIN G S Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage - Continuous — Non-repetitive tp « 50 ¿ts vgs V GSM ±20 ±40 Vdc Vpk Rating CASE 318-07, STYLE 21 SOT-23 (TO-236AB) Ade Drain Current Continuous (1)

k72 transistor sot 23

Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
Contextual Info: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW

k6z transistor

Abstract: MMBF170 iGSS 100nA Vgs 0v
Contextual Info: MMBF170 v isH A Y N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance Low Threshold Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Min Max -H :h“ A A 0.37 0.51 B 1.19 1.40

Contextual Info: MMBF4416LT1* M A X IM U M RATINGS Rating Symbol Value D ra in-Source V oltage Vos 30 V dc Drain-Gate V oltage VOG 30 Vdc G a te-Source V oltage VGS 30 Vdc Ig 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB Unit 3 Jp vP 1 Gat 2 T H E R M A L CH ARACTERISTICS

hearing aids amplifiers

Contextual Info: SST200/200A Vishay Siliconix New Product N-Channel JFETs PRODUCT SUMMARY VGS off 0 0 V(BR}GSS -0 .3 to -0 .9 00 9 is M in (m S ) lo s s 0.25 -2 5 Min (mA) 0.15 FEATURES BENEFITS APPLICATIONS • Low Cutoff Voltage: <0 .9 V • • Mini-Microphones • High Input Im pedance

Contextual Info: 2N7002K Vishay Siliconix New Product N-Channel 60-V D-S MOSFET TrenchFET MOSFET PRODUCT SUMMARY Vds(V) r DS<on) 60 (Q) Id ( m A ) 2 V gs = 10V ESD Protected 300 2000 V FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Direct Logic-Level Interface: TTL7CM0S

Contextual Info: Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.

sot23 marking code

Abstract: tp061ok
Contextual Info: TP0610K_ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) ( V ) r DS(on) ( f i ) V GS(»h)(V) lD (mA) -6 0 6 @ V qs = - 1 0 V -1 to -3 .0 -185 ESD Protected 2000 V FEATURES BENEFITS APPLICATIONS

Contextual Info: _ 2N7002E VISHAY Vishay Siliconix N-Channel 60-V MOSFET New Product PRODUCT SUM M ARY V ds V r DS(on) (-2) lD (mA) 60 3 @ VGS = 10 V 250 FEATU R ES B E N E F IT S A P P L IC A T IO N S • • • • • • • • • •