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    JSS SOT23 Search Results

    JSS SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    JSS SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol


    Original     		PDF Q62702-A95 Q62702-A113 Q62702-A79 OT-23

    marking JSs

    Abstract: bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95
    Text: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol


    Original     		PDF Q62702-A95 Q62702-A113 Q62702-A79 OT-23 marking JSs bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95

    BAS20 SOT23

    Abstract: bas21 jss BAS19 BAS20 BAS21
    Text: BAS19.BAS21 3 Silicon Switching Diodes High-speed, high-voltage switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking Pin Configuration Package BAS19 JPs 1=A 2 = n.c. 3=C SOT23 BAS20 JRs 1=A 2 = n.c. 3=C SOT23 BAS21 JSs 1=A 2 = n.c. 3=C SOT23 Maximum Ratings


    Original     		PDF BAS19. BAS21 VPS05161 EHA07002 BAS19 BAS20 BAS20 SOT23 bas21 jss BAS19 BAS20 BAS21

    BAS 20 SOT23

    Abstract: DIODE BAS 21 sot-23 JSs
    Text: BAS 19 . BAS 21 Silicon Switching Diodes 3  High-speed, high-voltage switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking Pin Configuration Package BAS 19 JPs 1=A 2 = n.c. 3=C SOT-23 BAS 20 JRs 1=A 2 = n.c. 3=C SOT-23 BAS 21 JSs 1=A 2 = n.c. 3=C


    Original     		PDF VPS05161 EHA07002 OT-23 EHB00032 Oct-07-1999 BAS 20 SOT23 DIODE BAS 21 sot-23 JSs

    BAS21 SOD323

    Abstract: BAS21 marking JSs JSs sot23 JSs diode jss sc74 bas21 jss BAS21-03W BAS21U SC74
    Text: BAS21. Silicon Switching Diode  For high-speed switching applications  High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single


    Original     		PDF BAS21. BAS21 BAS21-03W BAS21U OD323 BAS21-03W, BAS21U, BAS21 SOD323 BAS21 marking JSs JSs sot23 JSs diode jss sc74 bas21 jss BAS21-03W BAS21U SC74

    marking JSs

    Abstract: bas21 BAS21 SOD323
    Text: BAS21. Silicon Switching Diode  For high-speed switching applications  High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single


    Original     		PDF BAS21. BAS21 BAS21-03W BAS21U BAS21 BAS21U BAS21-03W OD323 BAS21, BAS21-03W, marking JSs BAS21 SOD323

    BAS21 SOD323

    Abstract: marking JSs BAS21 BAS21 SOT23 Marking code jSs BAS21U JSs marking code 65 marking sot23 marking code ag BAR63-03W
    Text: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking BAS21 BAS21-03W BAS21U SOT23 SOD323 SC74 single single parallel triple


    Original     		PDF BAS21. BAS21 BAS21-03W BAS21U OD323 BAS21, BAS21-03W, BAS21 SOD323 marking JSs BAS21 BAS21 SOT23 Marking code jSs BAS21U JSs marking code 65 marking sot23 marking code ag BAR63-03W

    BAS21

    Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
    Text: BAS21. Silicon Switching Diode  For high-speed switching applications  High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single


    Original     		PDF BAS21. BAS21 BAS21-03W BAS21U OD323 BAS21-03W, BAS21U, BAS21 BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23

    Marking code jSs

    Abstract: BAS21 SOD323 BAS21 JSs marking code BAS21 SOT23 bas21 infineon BAS21-03W BAS21U BCW66H SC74
    Text: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking


    Original     		PDF BAS21. BAS21 BAS21-03W BAS21U OD323 Marking code jSs BAS21 SOD323 BAS21 JSs marking code BAS21 SOT23 bas21 infineon BAS21-03W BAS21U BCW66H SC74

    Untitled

    Abstract: No abstract text available
    Text: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! " # ,  , , !    ! Type Package Configuration Marking


    Original     		PDF BAS21. BAS21 BAS21-03W BAS21U OD323

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch Type M arking O rdering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin C onfigu ratio n Package1) 1 r^ i 3 o-^ 1 -o


    OCR Scan     		PDF Q62702-A95 Q62702-A113 Q62702-A79 OT-23 EHA07002 EHB0CO26 EHB00031

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch T yp e M arking O rdering C o d e tape and reel B A S 19 B A S 20 BAS 21 JPs JR s JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin Configuration P a ck a g e1» 1-^ IsJ-0


    OCR Scan     		PDF Q62702-A95 Q62702-A113 Q62702-A79 OT-23 EH600026 fl0002fl CHB00031

    TRANSISTOR SMD MARKING CODE JSs

    Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with


    OCR Scan     		PDF PMBF170 TRANSISTOR SMD MARKING CODE JSs smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA

    sot-23 Marking LG

    Abstract: code 619 sot-23 CMPF4416A transistor marking code lg
    Text: Central" CM PF4416A sem iconductor Corp. SILICON N-CHANNEL J F E T DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M P F 4 4 1 6 A type is an epoxy m olded NChannel Silicon Junction Field Effect Transistor m anufactured in an S O T -2 3 case, designed


    OCR Scan     		PDF CMPF4416A OT-23 sot-23 Marking LG code 619 sot-23 transistor marking code lg

    transistor 6D sot23

    Abstract: No abstract text available
    Text: ÌE^b3k7254 M O T O R O L A SC -CXSTRS/R F* 6367254 MOTOROLA SC 96D 8 2 0 0 7 CXSTRS/R F t Symbol Value U nit Drain-Source Voltage Vos 25 Vdc Drain-Gate Voltage Vd g 25 Vdc VGS r) 25 Vdc !G 10 mAdc Symbol Max U nit PD 225 mW 1.8 mW/°C RflJA 556 °C/mW PD


    OCR Scan     		PDF b3k7254 MMBF5457 OT-23 O-236AA/AB) transistor 6D sot23

    JSs sot23

    Abstract: No abstract text available
    Text: BSS123LT1* M A X IM U M R A TIN G S Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage - Continuous — Non-repetitive tp « 50 ¿ts vgs V GSM ±20 ±40 Vdc Vpk Rating CASE 318-07, STYLE 21 SOT-23 (TO-236AB) Ade Drain Current Continuous (1)


    OCR Scan     		PDF BSS123LT1* OT-23 O-236AB) 2N7000 JSs sot23

    k72 transistor sot 23

    Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
    Text: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW


    OCR Scan     		PDF 2N7002-01 OT-23, MIL-STD-202, OT-23 300ns, DS30026 2N7002-01 k72 transistor sot 23 transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23

    k6z transistor

    Abstract: MMBF170 iGSS 100nA Vgs 0v
    Text: MMBF170 v isH A Y N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance Low Threshold Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Min Max -H :h“ A A 0.37 0.51 B 1.19 1.40


    OCR Scan     		PDF MMBF170 OT-23, MIL-STD-202, OT-23 DS30104 MMBF170 k6z transistor iGSS 100nA Vgs 0v

    Untitled

    Abstract: No abstract text available
    Text: MMBF4416LT1* M A X IM U M RATINGS Rating Symbol Value D ra in-Source V oltage Vos 30 V dc Drain-Gate V oltage VOG 30 Vdc G a te-Source V oltage VGS 30 Vdc Ig 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB Unit 3 Jp vP 1 Gat 2 T H E R M A L CH ARACTERISTICS


    OCR Scan     		PDF MMBF4416LT1* OT-23 O-236AB) 2N5484

    hearing aids amplifiers

    Abstract: No abstract text available
    Text: SST200/200A Vishay Siliconix New Product N-Channel JFETs PRODUCT SUMMARY VGS off 0 0 V(BR}GSS -0 .3 to -0 .9 00 9 is M in (m S ) lo s s 0.25 -2 5 Min (mA) 0.15 FEATURES BENEFITS APPLICATIONS • Low Cutoff Voltage: <0 .9 V • • Mini-Microphones • High Input Im pedance


    OCR Scan     		PDF SST200/200A S-04028-- 04-Jun-01 hearing aids amplifiers

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K Vishay Siliconix New Product N-Channel 60-V D-S MOSFET TrenchFET MOSFET PRODUCT SUMMARY Vds(V) r DS<on) 60 (Q) Id ( m A ) 2 V gs = 10V ESD Protected 300 2000 V FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Direct Logic-Level Interface: TTL7CM0S


    OCR Scan     		PDF 2N7002K O-236 OT-23 2N7002 S-02464--Rev. 25-Oct-OO S-02464-- 25-Oct-00

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.


    OCR Scan     		PDF BF861A; BF861B; BF861C BF861A: BF861B: BF861C:

    sot23 marking code

    Abstract: tp061ok
    Text: TP0610K_ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) ( V ) r DS(on) ( f i ) V GS(»h)(V) lD (mA) -6 0 6 @ V qs = - 1 0 V -1 to -3 .0 -185 ESD Protected 2000 V FEATURES BENEFITS APPLICATIONS


    OCR Scan     		PDF TP0610K_ S-04279-- 16-Jul-01 TP0610K sot23 marking code tp061ok

    Untitled

    Abstract: No abstract text available
    Text: _ 2N7002E VISHAY Vishay Siliconix N-Channel 60-V MOSFET New Product PRODUCT SUM M ARY V ds V r DS(on) (-2) lD (mA) 60 3 @ VGS = 10 V 250 FEATU R ES B E N E F IT S A P P L IC A T IO N S • • • • • • • • • •


    OCR Scan     		PDF 2N7002E O-236 OT-23) 25-Jan-99 2N7002E_