JSW DIODE Search Results

jSw Diode

Abstract: diode JSW jsw 44
Contextual Info: Dual Test-Disconnect Terminal Block W-Series WDTR 2.5 WDTR 2.5/WE Ä 'JsW | vs-/TPty, •; <: o Ordering Data Version - — Type — \ w A * -o P art No. Type Part No. B eige W ernid 952807 952809 B lue W e m id 952808 952810 Dimensions W id th /L e n g th /H e ig h t m m in.

r4kf

Abstract: A454 30S3 T151 T460 T760 T930 TP802C06 T4600
Contextual Info: T P 802C 06 ioa *±'J'*-K ' > a - y h + - / < U 7 i ef * - K SCHOTTKY BARRIER DIODE I» « Features '1&Vf Low V f C o n n e c tio n D ia g ra m Super high speed sw itch in g . a w e « *« « !* High reliability by planer design : A ppl ¡cations H igh speed pow er sw itch in g .

marking 606

Contextual Info: Ordering n u m b e r:E N 4889 II _ FX606 No.4889 N-Channel Silicon MOSFET SAÜVO i — l Ultrahigh-Speed Switching Applications I F eatures •Composite type composed of two low ON-reBistance N-channel MOSFET chips for ultrahigh-speed

2FI50A

Abstract: T760 T810 T930 lthf* E3
Contextual Info: 2FI50A 2 x50A ! Outline Drawings FAST RECOVERY DIODE MODULE • 4# : Features • S h o rt Reverse Recovery Tim e • V ariety o f C o n n e c tio n M e n u • SfeSfîfé Insulated Type ■ ff liÊ i A pplications A rc -W e ld e rs • K ffl • F re e -W h e e lin g D iode

transistor JSW

Abstract: jSw Diode
Contextual Info: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.

TRANSFORMER bck 03

Abstract: transistor JSW 07 OP295
Contextual Info: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable

jSw Diode

Contextual Info: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

transistor JSW

Abstract: toshiba srf
Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

transistor GY 721

Abstract: transistor JSW LT 723 ic jSw Diode
Contextual Info: TOSHIBA MG240V1US41 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT M G 2 4 0 V 1 US41 HIGH PO W E R SWITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed

Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

transistor JSW

Abstract: diode JSW FL 576-K125
Contextual Info: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM

Contextual Info: IDT54/74FCT139T/AT/CT FAST CMOS DUAL 1-OF-4 DECODER WITH ENABLE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • The ID T 5 4 /7 4 F C T 1 3 9 T /A T /C T are dual 1-of-4 decoders built using an advanced dual metal C M O S technology. These

10MHz ultrasound pulser

Abstract: USH5010 USH5010-AIC24 5SWOA
Contextual Info: USH5010 HIGH VO LTAG E Universal Semiconductor FEATURES channelSWITCH ANALOG GENERAL DESCRIPTION Full D ielectric Isolation fo r High Reliability 4 5 dB ty p ica l O u tp u t O ff Isolation at 10 Mhz T ypical on resistance, R o n , is 2 8 ohms E xcellent Noise Im m u n ity & Extrem ely Low I s o l

tc6105

Abstract: 2SK679 BH rn transistor 10285 TC-6105
Contextual Info: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8

imperial m015

Contextual Info: □ ANALOG DEVICES Dual/Quad Single Supply Operational Amplifiers 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V/ jls High Gain Bandwidth: 4 MHz Low Input Offset Voltage

imperial m015

Abstract: BF253
Contextual Info: ANALOG ► DEVICES Dual/Quad Single Supply Operational Amplifier 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V / jjls High Gain Bandwidth: 4 MHz Low Input Offset Voltage

6823A

Abstract: ZJ DIODE 1d4 nz
Contextual Info: FAST CMOS 18-BIT REGISTER FE A T U R E S : - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps - Low input and output leakage <1 n A (max.) - ESD > 2000V per MIL-STD-883, Method 3015; > 200V using

Contextual Info: FAST CMOS IDT54/74FCT16841AT/BT/CT/ET 20-BIT TRANSPARENT LATCH Júáá$«#JA FEATURES: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps - Low input and output leakage <1 |j A (max.)

ultrasonic receiver

Abstract: 13a1002-c3 OP492 OP492GP BF253 mosfet bf 966 10k resistor array SIP 1752k OP292GP 0P492
Contextual Info: ANALOG DEVICES FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V / | jls High Gain Bandwidth: 4 MHz Low Input Offset Voltage High Open-Loop Gain No Phase Inversion Low Cost APPLICATIONS

16841

Abstract: jSw Diode UG 74 a
Contextual Info: FAST CMOS IDT54/74FCT162841AT/BT/CT/ET 20-BIT TRANSPARENT LATCH Júáá$«#JA D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps low-powerlatchesareidealfortemporarydata storage. Theycan be used

Contextual Info: FAST CMOS 18-BIT REGISTER FE A T U R E S : IDT54/74FCT162823AT/BT/CT/ET D E S C R IP TIO N : - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps - Low input and output leakage <1 |j A (max.)

AN4001

Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
Contextual Info: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at

transistor JSW

Abstract: SSM2135
Contextual Info: JUL e 199Û Dual Single-Supply Audio Operational Amplifier ANALOG ► DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V lïz Equivalent Input Noise @ 1 kHz 0.001% THD+N Vn = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth