JU 257A Search Results

Panasonic JU-257A

Abstract: JU-257A JU-256A Matsua Floppy panasonic disk drive JU-226A Sumitomo Electric smcd panasonic floppy ju-226a 226a JU-257
Contextual Info: 3.5 Floppy Disk Drive 25.4mm Height 3.5 Floppy Disk Drive 12.7mm Height, Semi-Square Size JU-256A/JU-257A JU-226A/JU-227A Features: Features: • • • • 25.4mm 1inch height High reliability with aluminium diecast base Long life with direct spindle motor

Contextual Info: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs Ju n e 1 9 9 8 Features Package • 5A, 500V, RDS on = 1.420S1 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: OM76Q2ST ISOLATED HERMETIC TO-257AA ADJUSTABLE VOLTAGE REGULATOR Three Term inal, A d ju sta b le Voltage, 1.5 A m p P recision P ositive R e gulator In H erm etic JEDEC TO-257AA Package FEATURES • • • • • • • Isolated Hermetic Package, JEDEC TO-257AA Outline

Contextual Info: h a r r is S E M I C O N D U C T O R FSS9230D, FSS9230R 7 Radiation Hardened, SEGR Résistant P-Channel Power MOSFETs Ju n e 1 9 9 7 Features Package • 4A, -200V, rDS ON = 1.60£i TO-257AA • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

Contextual Info: h a r r is S E M I C O N D U C T O R FSS230D, FSS230R W " W U • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Ju n e 1 9 9 7 Package Features • 8A, 200V, rDS ON = 0.440SÌ TO-257AA • Total Dose M eets Pre-Rad Specifications to 100K RAD (Si)

Contextual Info: OM1860STM 1.5 AMP LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR APPROVED TO DESC DRAWING 5962-89981 T h re e T e rm in a l, P o s itiv e A d ju s ta b le L o w D ro p o u t V o ltag e R e g u la to r In H e rm e tic JE D E C T O -257A A P ackage FEATURES Similar To Industry Standard LT1086

Contextual Info: OM1324NTM OM1324STM 1.5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR APPROVED TO DESC DRAWING 7703405 Three Terminal, Precision Adjustable Positive Voltage Regulator In Hermetic JEDEC TO -257AA Package LM117A FEATURES • • • • • • • Similar To Industry Standard LM117A

Contextual Info: OM1325NTM OM1325STM 1.5 AMP PRECISION NEGATIVE ADJUSTABLE REGULATOR APPROVED TO DESC DRAWING 7703406 Three Terminal, Precision Adjustable Negative Voltage Regulator In Hermetic JEDEC TO-257AA Package LM137A FEATURES • • • • • • • Similar To Industry Standard LM137A

OM7602ST

Abstract: sma in4001 1N4002 2N5640 LM117 MPS2222 OM7602NT OM803
Contextual Info: OM76Q2ST ISOLATED HERMETIC TO-257AA ADJUSTABLE VOLTAGE REGULATOR Three Terminal, Adjustable Voltage, 1.5 Amp Precision Positive Regulator In Hermetic JEDEC TO-257AA Package FEATURES • • • • • • • Isolated Hermetic Package, JEDEC TO-257AA Outline

Contextual Info: T e m ic 2N7090 Siliconix_ P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) ( ß ) I d (A) -2 0 0 0.80 - 5 .7 TO-257AB H erm etic Package S 9 O C ase iso lated O D UUU G D S Tbp View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

Contextual Info: COM140T COM340T COM24QT COM44QT COTS COMMERCIAL OFF-THE-SHELF POWER MOSFETS IN TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFETs In Hermetic Metal Package FEATURES • Isolated Hermetic Metal Package • Fast Switching • LOW R Ds(on) DESCRIPTION

transistor c 4236

Abstract: ic cow 160v 150 N7082 2N7082 EI33
Contextual Info: SILICONIX INC 33E D JïiSSSKSä • 0254735 QOlbOSê 7 « S I X 2N 7082 T ^ -u N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BRJDSS •d (A 200 0.30 9.0 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: OM1327NTM OM1327STM 1.5 AMP HIGH VOLTAGE NEGATIVE ADJUSTABLE REGULATOR APPROVED TO DESC DRAWING 7703408 Three Terminal, High Voltage, Precision Adjustable Negative Voltage Regulator In Hermetic JEDEC TO-257AA Package LT137AHV FEATURES • • • • •

Contextual Info: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View

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Abstract: T11G
Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS140 D, R, H November 1994 2N7284D, 2N7284R 2N7284H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Features Package • 17A, 100V, RDS(on) = 0.145Q TO-257AA

Contextual Info: H a rris 2N7279D, 2N7279R 21^7279H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS234 D, R, H Radiation Hardened N-Channel Power MOSFETs November 1994 Package Features • 5A, 250V, RDS(on) = 0.715ft TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: CXD1257AR SONY. CCD Camera Tim ing Generator Dttscription The CXD 1257A R is for use with the ICX044, ICX045 CCD image sensors and other signal proces­ sing circuits to generate the necessary timing pulses. Features • NTSC and PAL compatible • On-chip electronic shutter

Contextual Info: • ■ TOSHIBA L O G I C / M E M O R Y MÖE » ■ ^0^7240 0G23373 b ■ T0S2 TC74HCT257AP/AF TC74HCT258AP/AF i r TC74HCT257AP/AF Q U AD TC74HCT258AP/AF Q U AD T h e TC74HCT257A a n d TC74HCT258A a re h ig h speed CMOS M U L T IP L E X E R S fa b ric a te d w ith silic o n g a te

HN58V256A

Abstract: HN58V256AT HN58V257A
Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The H itachi H N 58V 256A and H N 58 V 2 5 7 A are a electrically erasable and p rogram m able E E P R O M ’s

Contextual Info: Preliminary Data Sheet No. PD - 9.1273B International l ö R Rectifier IRHY7230CM IRHY8230CM JANSR2N7381 JANSH2N7381 R E P E T IT IV E A V A LA N C H E A N D d v /d t RA TED [REF: MIL-PRF-19500/614] N -C H A N N E L HEXFET TRANSISTOR MEGA RAD HARD 200Volt, 0 .4 0 0 , MEGA RAD HARD HEXFET

ERO Electronic

Abstract: mosfet 257A ERO Electronic F-48
Contextual Info: FSS23AOD, FSS23AOR 20 HARRIS SEMICONDUCTOR 9A, 200V, 0.330 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 9A, 200V, rDS 0N = 0.330i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: Preliminary Data Sheet No. PD-9.1400A International I R Rectifier R EPETITIVE AVALANCHE AND IRHY9130CM IRHY93130CM JANSR2N7382 JANSF2N7382 [REF: MIL'^ channel dv/dt RATED HEXFET TRANSISTOR RAD HARD -100Volt, 0.30Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technol­

CERAMIC LEADLESS CHIP CARRIER

Abstract: 54F257ADM 54F257AFM 74F257A 74F257APC 74F257ASC 74F257ASJ J16A M16A M16D
Contextual Info: S E M IC O N D U C T O R tm 74F257A Quad 2-Input Multiplexer with 3-STATE Outputs General Description Features The ’F 2 5 7 A is a quad 2-input m ultiplexer w ith 3-STATE out­ puts. Four bits of d ata from tw o sources can be selected us­ ing a Com m on Data Select input. T he fo u r outputs present

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­