JUL01 Search Results

capacitive touch screen panel

Abstract: mr3m H301 L199
Contextual Info: Comercial Naming SIT Product Naming System V3.1 Jul012005 Product Naming System V3.1 Panel Pro Disply series PPD Panel Pro sliM series PPM Panel Pro Plus series PPP Frame Pro Disply series FPD Frame Pro SliM series FPM Frame Pro Plus series FPP Chassis Pro sliM series

Contextual Info: C A T A L O S L IS T IN O M IC R O SWITCH mâtom, a u *ox FEO. M FR. CODE BZ- 2A W 855-D 6 SWITCH - BASIC a MVHtMof MnuiouMwimnu KWUiM <mm [ u ì L #*l 91929 BUNA N ELASTOMER PLUNGER SEAL .31 WIDE LEVER 88 ± .0 1 0 R N.C.2 N.C.I N.O.I ' N.0.2 <£> CI RCUIT

Contextual Info: 6 7 DRAWI NG MADE THIS IN DRAWI NG THIRD 15 ANGLE UNPUBLI 5HED COPYRIGHT 5 2 3 4 PROJ E CT I ON RELEASED 19 BY AMP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST LOC 19 DO DF RESERVED. REV I 5 I 0 N 5 ZONE LTR G DE5CR[PTION REV

1384c

Contextual Info: Features • Incorporates the ARM7TDMI ARM Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-circuit Emulation

VN3515L

Abstract: VN4012L
Contextual Info: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS

atmel Reflow soldering

Abstract: AT91FR4081 ATMEL 626 atmel 807 AT91 TC CAPTURE
Contextual Info: Features • Incorporates the ARM7TDMI ARM Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-circuit Emulation

ISS 99

Abstract: pressure sensor strain gauge CiDRA temperature gauge sensor pressure sensor STRAIN GAUGE Optical-Pressure-Sensor harsh environment PRESSURE SENSOR ISS 99 diode datasheet electromagnetic transducer
Contextual Info: PRELIMINARY BULLETIN PRELIMINARY BULLETIN PRELIMINARY BULLETIN Optical Pressure Sensor Specifications CiDRA Industrial Sensing Solutions ISS introduces an optical pressure measurement system for use in process monitoring applications. This product is based

BFR360L3

Contextual Info: BFR360L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor k 4213

Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

TQ32

Abstract: ablestik amkor amkor cabga Nitto ASE LQFP 208 CABGA 6x6
Contextual Info: Atmel Lead Pb -Free Plan Jul-00 Subcontractor Oct-00 Jan-01 Apr-01 Jul-01 Package AIC(Malaysia) 32 lead TSOP AIC(Malaysia) 8 lead SOIC Amkor(Korea) 81 ball CABGA Amkor(Korea) 44 lead TQFP Amkor(Phillip.) 5 X 8 LAP (replaces 8 lead SOIC) Amkor(Korea) 64 lead 10 X 10 LQFP*

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

Contextual Info: Features • Utilizes the ARM7TDMI ARM Thumb Processor Core • • • • • • • • • • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt

Contextual Info: 6 7 DRAWI NG MADE THIS IN DRAWI NG THIRD 15 ANGLE UNPUBLI 5HED COPYRIGHT 5 2 3 4 PROJ E CT I ON RELEASED 19 BY AMP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST LOC 19 REV I 5 I 0 N 5 DO DF RESERVED. ZONE LTR G DE5CR[PTION REV PER

atmel Reflow soldering

Contextual Info: Features • Incorporates the ARM7TDMI ARM Thumb® Processor Core • • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Little-endian – Embedded ICE In-circuit Emulation

vALOX 310 SEO

Abstract: mar01 Stanyl valox 420 seo Valox 310
Contextual Info: 501-373-2 Qualification Test Report 23Jul03 Rev O EC 0990-0838-03 Pivot II Connector, Two Pair 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Two Pair Pivot II Connector to determine its conformance to the requirements of Product Specification 108-1657-2 Revision A.

Contextual Info: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-Circuit Emulation

K 3677

Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

4012L

Abstract: VN3515L VN4012L
Contextual Info: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS

Contextual Info: 6 7 DRAWI NG MADE THIS IN DRAWI NG THIRD 15 ANGLE UNPUBLI 5HED COPYRIGHT 5 2 3 4 PROJ E CT I ON RELEASED 19 BY AMP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST LOC 1 9 DF RESERVED. DO REV I 5 I 0 N 5 ZONE LTR F DE5CR[PTION REV PER

ad 161 z1

Contextual Info: r 6 7 TH 5 DRAWING COPYRIGHT I S ONPOBLI S H E D . R E L E A S E D FOR P O B L I C A T I O N BY AMP INCORPORATED. 19 4 5 2 3 ,19 LOC ALL R IG H T S R ES E R V E D . R E V I S I ON S D I ST 00 AD DESC R IPT IO N REV PER 0 G 3 C - 0 1 97-01 RB 0 9 JULO’

HONEYWELL 24PC SERIES CHART 5

Abstract: 24PC05SMT 24PC01SMT 24PC15SMT 415E Scans-0016267
Contextual Info: FO-52847-F 005 CATALOG LISTING BRANDING 24PC01SMT 401 P 24PC05SMT 405P 24PC15SMT 41 5 P 24PC01SMT-SAMPLES 401 P 24PC05SMT-SAMPLES 405P 24PC15SMT-SAMPLES 41 5 P CODE DIAGRAM SUGGESTED LAND PATTERN GND 2 3 4 5 CO 9 GENERAL ORERATING I REV DOCUMFNT 6 0001387

BZ-RX122-A29

Contextual Info: MICRO SWITCH C A T A L O G BZ-RX122-A29 SWITCH - BASIC a Honeywell Division L I 5 T I N G F E D . W F B . CODE 9 1 9 2 9 X m Jl .16 T < j CM < I 917+.010 CNI CNJ .015 MAX ° r - N LJ OQ < 0.140 +.002 HOLE A .625 + .015 ‘ OPERATING .140+n|yF / l \ ~ i POSITION

DIN 6784 c1

Abstract: BCR108T BFR380T E6327 SC75
Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996