JX 903 Search Results

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

MAX900ACWP

Abstract: MAX900 MAX900ACPP MAX900BCPP MAX900BCWP MAX901 MAX902 MAX903 MAX900A
Contextual Info: > i/iy jx i/i/i 19-2887; Rev. 2; 7/91 , H igh-Speed Lo w -P ow er V o ltag e C om parators The MAX900-903 high-speed, low-power, s in g le /d u a l/ qu a d vo lta g e c o m p a ra to rs fe a tu re d iffe re n tia l ana­ log in p u ts and TTL lo g ic o u tp u ts with a ctive internal

jx 903

Abstract: G200 c 4977 transistor ptf10135
Contextual Info: PTF 10135 GOLDMOS Field Effect Transistor 5 Watts, 2.0 GHz Description • The PTF 10135 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

jx 903

Abstract: f10107 PTF 10107 ptf10107 ge-14 transistor
Contextual Info: GOLDMOS PTF 10107 Field Effect Transistor 5 Watts, 2.0 GHz Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

lm 398- SAMPLE AND HOLD

Abstract: S2044 S2049 D1133
Contextual Info: PRELIMINARY DEVICE SPECIFICATION M C GLM C O M P L IA N T S E R IA L IN TER FAC E CIRCUITS FEATURES • • • • • • • • • • • • • • • Complies with the electrical and link levels of the Gigabaud Link Module GLM specification Functionally compliant with ANSI X3T11 Fibre

Contextual Info: C E R A M IC MICROW AVE FILTERS BAN D PASS FILTERS-MB TYPE m nffnta /nnoytttan in EUttnonics DFC Series 2 -P O L E -L O W C O S T T R A N S M IS S IO N vs. R E FLE C TIO N C H A R A C TE R IS TIC S D IM E N S IO N S : m m S P E C IFIC A TIO N S E -A M P S /IS M /G S M

TMCX285

Contextual Info: CCW Continuously Corrugated Welded Cable A RMORED CAB LE FO R HAZAR D O U S LOCATI O N S OCTOBER 2014 CCW® Servicing Industrial and Specialty Applications This catalog contains in-depth information on the most comprehensive line of CCW® instrumentation, power, control,

FC903

Abstract: N3869
Contextual Info: j - KNo. N3869a ] - i - X N°3869 ¿1 5 V f r X X < £ £ l \ r ^ O A o v u = i > x + F U 9 0 3 ras -iJÉifc0 C P { c i r - r ^ “ Hî:3* i r t j K b f c « Â ^ - r x - c * u . n n s f t ^ ^ f i i c r y x - c t s . •FC903 fiDSBOlOtB ^ « f - y X3i fc H - * - * ÆMMÊf L fc fc ® "0 * * .

hef4751

Abstract: TDD1742T td01742t hef4750 VMUX HEF4750V N2411 TDD1742 1742T
Contextual Info: Preliminary specification Philips Semiconductors RF Communications Products TDD1742T CMOS frequency synthesizer G ENER AL DESCRIPTION The T D D 1 74 2 T is a low power, high-performance frequency synthesizer in local oxidation CMOS LOCMOS technology. The device is designed for use in channelized V H F /U H F applications especially

B-26

Contextual Info: Ribbon Cable Connectors D 1.27mm .050" Pitch m o le x FEATURES AND SPECIFICATIONS Header Features and Benefits ilectrical • Polarizing end walls and pegs Voltage: 250V ■ Stamped contacts with in-line, flat blades Current: 1 .2 A ■ 2 points of contact with female terminal

d1yd

Abstract: NJU6435 NJU6435D NJU6435E NJU6435F QFP64 HJU6435 CMTA 54 zx 3 k4 050/LT/B2
Contextual Info: \1 , as O 2 CO V "rl C— 03 GO 03 CO \ CO \ Ö Ü c X Ö CO V to to CO ••v to \ I H aw §8 A X M s >J s s X >S >i tS3 O CO o CO o rV rV rV V V -r w 3m Mft V m m m s m V V -r ~r V — |g » i Z S CO a CO to LI rfl V SS a • • • • £ □ V" g 58

Contextual Info: i 4 P /N -1 -1 S F -1 C C -1C C S F -2 -2 S F -2 C C -2C C S F -3 -3 S F -3 C C -3C C S F APPLICABLE NOTE S 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 (0 A) .1 43 .1 43 .1 43 .1 43 .0 88 .0 88 .0 88 .0 88 .1 43 .1 43 .1 43 .1 43 MIN MIN MIN MIN MIN MIN

QRB1134

Abstract: QRB1133 LF 833
Contextual Info: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1133/1134 DESCRIPTION PACKAGE DIMENSIONS — .328 8.33 .420 (1 0.6 7)— Th e QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

C34F

Abstract: IS903 C 34 F
Contextual Info: MOTOROLA MC34F19 MC34F19A A dvance Inform ation TELEPHONE LINE FEED A N D 2- TO 4-WIRE C O N VER SIO N CIRCUIT . . desig n ed to replace th e h yb rid tra n s fo rm e r circ u it in Central O ffice, PABX and S u b scrib e r c a rrie r e q u ip m e n t, p ro v id in g signal

DFc21r57

Abstract: DFC3r DFC31 jx 903
Contextual Info: CERAMIC MICROWAVE FILTERS BAND PASS FILTERS-M B TYPE m u f fn t n /tutorator ui Electronics DFC Series j / \JV s, S 1/ 1 o • ofk 7 c 7\ w -* o ro o o Return Loss dB r N / r o TRANSMISSION vs. REFLECTION CHARACTERISTICS DIMENSIONS: mm Attenuation (dB) 03 N

jx 903

Contextual Info: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ►j45p ►J S Op Unit» In im ►jwp • 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT • +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT • 0.3 MICRON REFRACTORY METAIVGOLD GATE • DIAMOND-UKE CARBON (DLC PASSIVATION

HRD050R6

Abstract: HRD05
Contextual Info: Outline Dimensions [U n it I m m ] P a c k a g e : AX057 P a c k a g e I AX 0 6 D 3±°i ‘ $ 'Ü *2.6±M P a c k a g e : AX0 6 = 0 27.5^ 27.5 f 2 -M- 27.5 ±2 27.5*2 -M- ®°— S- ^ A x ia l Taping o r R a d ia l Taping P a c k a g e : A X06 P a c k a g e : AX078

jx 903

Abstract: LTA 902 AX903 AX900-903 902Z max9008 IC K 902 902-190 MAX900ACWP MAX900A
Contextual Info: yi/iyjxiyi/i 19-2887; Rev 2; 7/91 H igh-S peed, L o w -P o w er V o ltag e C om parators ♦ 8ns Typ propagation Delay All c o m p a ra to rs ca n be p o w e re d from s e p a ra te

JHDB3

Abstract: ziner diode diode ziner ziner diodes 00 ziner MX7224 ski mx MX7224CQ MX7224KCWN MX7224LCWN
Contextual Info: ykiyjxiyvi •9-0308; Rev 1; 7/95 CMOS 8 -B it DAC with Output A m plifier _ Features The MX7224 is a pre cisio n vo lta g e -o u tp u t C M O S d ig ita l-to -a n a lo g co n ve rte r DAC w h ich in clu d e s an o u tp u t a m p lifie r on ch ip . O n ly an external reference

A1000-REV00k9040-IE

Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
Contextual Info: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/23
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MAX901

Abstract: max903 MAX900ACWP MAX903CPA MAX900 MAX900ACPP MAX900BCPP MAX900BCWP MAX902 MAX900A
Contextual Info: 19-2887; Rev. 3; 11/92 H ig h -S p e ed , L o w -P o w e r V o lta g e C o m p a ra to rs _ F e a tu re s ♦ 8ns Typ Propagation Delay A ll c o m p a ra to rs ca n b e p o w e re d fro m s e p a ra te a n a lo g a n d d ig ita l p o w e r s u p p lie s or fro m a s in g le

PD42101

Abstract: upd42101 910-B
Contextual Info: NEC JHPD42101 Line Buffer for NTSC TV NEC Electronics Inc. Description Pin Configuration The ^PD42101 is a 910-word by 8-bit line buffer fabri­ cated with a CMOS silicon-gate process. The device helps to create an NTSC flicker-free television picture noninterlaced scan conversion by providing intermedi­

DS1245

Abstract: 32-PIN 34-PIN DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS9034PC DSI245AB-85
Contextual Info: DS1245Y/AB 1024k N o n vo la tile SRAM www.dalsemi.com PIN ASSIGNMENT FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory

upd42101

Abstract: PD42101 ZXd 27
Contextual Info: NEC jn P D 4 2 1 0 1 Line Buffer for NTSC TV NEC Electronics Inc. Description Pin Configuration The jiPD42101 is a 910-word by 8-bit line buffer fabri­ cated with a CMOS siiicon-gate process. The device helps to create an NTSC flicker-free television picture