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    JZ2 TRANSISTOR Search Results

    JZ2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    JZ2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    epsilam

    Abstract: PZ1418B15U PZ1721B12U PZ2024B10U
    Text: JI _ - PHILIPS PZ1418B15U PZ1721B12U PZ2024B10U SbE J> INTERNATIONAL • 7110flEb OOMbMbfl E55 ■ P H I N MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS T ^ ^ 3 -O S NPN transistors for use in common-base, class-B, wideband amplifiers under CW conditions in military


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    PDF PZ1418B15U PZ1721B12U PZ2024B10U 711002b PZ1418B30U/PZ1721B25U/PZ2024B20U T-33-09 epsilam PZ2024B10U

    MB81C79

    Abstract: No abstract text available
    Text: October 1989 Edition 1.0 DATA SHEET fu J itsu = MB81C79B-35/-45 CMOS 72K-BIT HIGH SPEED SRAM 8192-WORDS x 9-BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB81C79B is 8192words x 9bits static random access memory fabricated with a


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    PDF MB81C79B-35/-45 72K-BIT 8192-WORDS MB81C79B 8192words D28018S-2C MB81C79B-35 MB81C79B-45 28-LEAD MB81C79