K 1094 TRANSISTOR Search Results

BONUS-AN68-1

Abstract: TSM-HV50 BR6000T IEC60831 TSM-HV690
Contextual Info: Direct Link 1094 Applications & Cases Dynamische BLK – Beispiel Windkraftanlagen November 2007 Schnelle Reaktion EPCOS führt alle Schlüsselkomponenten für dynamische Blindleistungskompensations-Systeme. Solche Systeme zeichnen sich durch schnelle Reaktionszeiten und weitgehende Wartungsfreiheit aus.

BFN21

Contextual Info: SIEMENS PNP Silicon High-Voltage Transistor BFN 21 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 20 NPN

Zero crossing switching thyristors module

Abstract: BONUS-AN68-1 BR6000T thyristor using zero crossing circuit MKP and MKK power capacitor TSM-HV50 wind turbine diagram all types of thyristor and applications epcos 5000 08 EPCOS capacitors
Contextual Info: Direct Link 1094 Applications & Cases Dynamic PFC in wind power plants November 2007 Fast reaction EPCOS portfolio features all key components for dynamic power factor correction PFC systems. Wind power plants, in particular, stand to profit from the application of such systems, which feature fast reaction times and

k 1094 transistor

Abstract: transistor K 1096 MARKING Dt3 DT3 SC-88 PUMD3
Contextual Info: Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors PUMD3 FEATURES • Transistors with different polarity and built-in bias resistors R1 and R2 typ. 10 k ii each 6 5 4 1 2 3 • No mutual interference between the transistors

Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GENERAL DESCRIPTION PHX1N50E QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER field-effect power transistor in a full pack, plastic envelope featuring high

ld 1088 bs

Abstract: k 1094 transistor 1/ld 1088 bs
Contextual Info: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 380 Vbs 1000 V 5.5 A ^bsfon 2w Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage Vbs V DGR Drain-gate voltage

Contextual Info: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks

Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GEN ER AL DESCRIPTION PHX1N50E QUICK R EFEREN CE DATA N-channel enhancement mode field-effect power transistor in a fuf! pack, plastic envelope featuring high avalanche energy capability, stable

transistor rf m 1104

Abstract: TRANSISTOR 102 K5C 2SD1077 1080II n 1106 n1106 n25x
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode ' • FR ED FET fé YW5S 3 Pin 1 Pin 2 Type BUZ 380 Vfes 1000 V b flbsfon 2w 5.5 A Pin 3 D G S Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage

LD25V

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

TEA 1091

Abstract: 2Sc2565 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 25C2564 2SC2526 cc 1094 DUQN ic tea 1090
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2sk1299

Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in

QS 100 NPN Transistor

Abstract: transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor
Contextual Info: • P hilips Sem iconductors •— bb S3 T3 1 D0 25 17 5 254 « A P X N AUER P H I L I P S / D I S C R E T E Product specification b7E NPN 5 GHz wideband transistor DESCRIPTION fc BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use

D38W7

Abstract: 70MM D32W8 D38W10 D38W12 D38W8 D38W9 D38W7-D38W14
Contextual Info: Silicon r " - j i f= 11— & Transistors i D38W7-14 The General Electric D38W7-D38W14 are NPN, silicon, planar, epitaxial transistors designed for low noise, high gain amplifier applications. FEATURES • • Low noise figure < 2db High voltage rating, 80V

BFR91 philips

Contextual Info: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The

Contextual Info: SONY LCX007CN 3.4cm 1.35-inch Black-and-White LCD Panel Description The LCX007CN is a 3.4cm diagonal active matrix TFT-LC D panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. Use of three panels in combination

hst 1025

Abstract: sony lcd tv circuits diagrams diagram power supply sony 32 in LCD TV circuit
Contextual Info: SONY 3.4cm 1.35-inch Black-and-White LCD Panel Description The LCX007CL is a 3.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. Use of three panels in combination with

Contextual Info: 7^2^237 G G 4 b 4 cî 7 ÛT3 «SSTH STP50N06 STP50N06FI SGS-THOMSON id * ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI . . • . . . . . V dss RDS on Id 60 V 60 V < 0.028 n < 0.028 Q 50 A 27 A TYPICAL Rds(oh) = 0.022 £2

marking H2A sot-23

Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the

free transistor equivalent book

Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D

lta 601

Contextual Info: FIELD E F F E C T T R A N S IS T O R 2SK1359 SILICON N C H A N N E L MOS T Y P E tt-M O S i i -5 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U n it 15.9MAX. • Low D ra in -S o u rc e ON R e s is ta n c e : • H ig h Forward T r a n s f e r A d m itta n c e :

D-90491

Abstract: PJ 1179
Contextual Info: SALES OFFICES EUROPE AMERICAS DENMARK ITALY BRAZIL 2730 HERLEV Herlev Torv, 4 Tel. 45-44 94.85.33 Telefax: (45-44) 948694 20090 ASSAGO (MI) V.le Milanofiori - Strada 4 - Palazzo A'4/A Tel. (39-2) 57546.1 <10 linee) Telefax: (39-2) 8250449 05413 SÀO PAULO

TEA5101A

Abstract: TEA5031 euroscart TV TEA5031D TEA5620 TEA5630 OSD ic color tv picture tube Circuit Diagram
Contextual Info: S G S -T H O M S O N M » » [iO T ô * S TEA5031D COLOR TV VIDEO PROCESSOR • M ATRIXING OF R, G, B SIGNAL FROM (R-Y) AND (B-Y) ■ ELECTRONIC CO NTROL OF CONTRAST, BRIGHTNESS AND SATURATION ■ THREE CHANNELS VIDEO SWITCH, FOR SE­ LECTION O F INTERNAL SIGNAL (broadcast)