K 1288 Search Results

Contextual Info: ^ RB451F — K/D iodes RB451F y IJ =l > I k°2 * v 7 M $ '> a "J V + - / * U 7 $ < * ~ K Silicon Epitaxial Schottky Barrier Diode • W K ifiilS I/D im e n s io n s U n it: mm 1) 5 - C - A b 2) / h M T '* 3 „ 3) 9 r^ ](o $ § j z C &-5 o 1) M in im old type

Contextual Info: 1 LOC DIST 2 THIS DRAWINGIS UNPUBLISHED. | RELEASCO FOR PUBLICATION . 1» 1 p O onm tC M ? I» a n r AMR iw cwwam to. hmwmuw. P». K ttf f V C P . AMR M O O U C T S HAY K COwCHCO «Y U.S. AMO F W K m M ltM f S A M D ^M M ltN T » K N D M S . 38fe .IW - i

Contextual Info: M 5M 5V 1288C K P ,K J,V P -1S .-2 I,-25 p W*V .V 1048576-BIT(131072-WORD BY 8-BIT CM0S STATIC HAM DESCRIPTION The M5M5V1288CKP,KJ,VP are a family of 131072-word by 8-bit PIN CONFIGURATION (TOP VIEW) static RAMs, fabricated with the high performance CMOS silicon

K3007

Abstract: hp 2232 tt 2232 2232-17 DDD2272 EL2020 EL2232CM EL2232CN EL2232J t924
Contextual Info: SSE D • W K 0 ^ 9 m w im L w k W tfw K t HIGHPERFGBSWIiGlMlAUJGIfflfEtifttSDClflGtllTS D0D2272 T4T H E L A EL2232/EL2232C 80 MHz, Fast Settling, Dual Current Mode Feedback Amplifier " elantec : . /" ' P V M ~ Z S > inc F e a tu r e s G en era l D e sc r ip tio n

3dm3

Abstract: 16mx16d
Contextual Info: HYMD116M645A8-K/H/L 16Mx64 DDR Unbuffered SO-DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), L (D D R 200«C L=2) Function Supported H e x a V a lu e F u n c tio n D e s c rip tio n Byte# Note K Number of Bytes written into serial memory at module

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

1SS134 ROHM

Abstract: ROHM 1SS292 1SS139
Contextual Info: $ < K /D io d es M 3 . -f y ^ > *7 $ - i $ — K /S w itc h in g Diodes • S & J f X 'f K /H ig h - S p e e d S w itching Diodes m Type B E S S IE Vr V i1 EE Cond. V f (V) Max. I f (mA) Package Page 1S2471 80 1.2 100 D O -35/S C -40 1187 1S2472 50 1.2 100

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

Ic 9430

Abstract: Scans-048 Electron Device Mfg Corp
Contextual Info: Electron Device Mfg. Corp. E u s s ia , 194156, Sanct-P etersburg, Engels pr., 27 Telephone 812 552 45 07 Telefax (812) 553 70 01 Telex 121466 ELEKS SU Electron Device Mfg.Corp T E X H H H E C K H E X A P A K T E P H C T H K H YJ13 D E L A Y L IN E S P E C IF IC A T IO N S

5252 F 0911

Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
Contextual Info: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable

ksp 94 j20

Abstract: 1093 SO-8 LTC1286
Contextual Info: ANALOG-TO-DIGITAL CONVERTERS LTC Sampling ADCs 8 Bits Parallel Output Serial Output in SO-8 L T C 1 0 9 9 3 0 0 k sp s S in g le Inp u t, M ic r o p o w e r - S in g le In p u t L T C 1 0 9 6 (3 3 k sp s) L T C 1092 (38k sp s) L T C 1 0 9 6 L ( 1 7 k s p s . 3 V P o w e re d )

Contextual Info: REVISION K QTS-XXX-01-XXX-D-DP-EMX-XX K No OF PAIRS -016, -032, -048, *-064, *-080 PER ROW DO NOT SCALE FROM THIS PRINT OPTION -TY: TRAY PACKAGING EDGE MOUNT THICKNESS -EM2: .064[1.63] .004 PCB (USE QTS-25-01-D-EM2-XX & T-1S42-01-XXX) -EM3: (USE QTS-25-01-D-EM3-XX

27248

Contextual Info: PRELIMINARY 80960JD EMBEDDED 32-BIT MICROPROCESSOR • P in /C o d e C o m p a tib le w ith all 80 96 0J x P ro ce ss o rs ■ H ig h -P e rfo rm a n c e E m b ed d ed A rch ite c tu re — O n e In s tru c tio n /C lo c k E xecu tio n — C o re C lo c k R a te is 2x th e B us C lo c k

rccb

Contextual Info: Ground Test/Disconnect Terminals SAKT E/SAKA 10 M ode of operation SAKT E S A K T E /S A K A 10 D im ensions Length O p era tin g status — 4- _ m m in. 19 (.75)/27 (1.06) Height (incl. TS 32/TS 35x7.5)mm (in.) 55 (2.17)/82 (3.23) Insulation stripping length mm (in.)

dba1

Contextual Info: A D B A1 INDEX AREA 5 M A A2 0.20 C K 232X A1 E 0.10 C 4 C SEATING PLANE DETAIL K ROTATED 90 _ CLOCKWISE M 0.10 15X e S A1 INDEX AREA 16 14 12 10 8 6 4 2 15 13 11 9 7 5 3 1 15X NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES

Contextual Info: Philips Semiconductors SOCtÌOll 18 Package outlines G e n e r a l P u r p o s e / L in e a r IC s INDEX 0404B 8-Pin 300 mils wide Plastic Dual In-Line (N) P a c k a g e . 1281 0174C 8-Pin (157 mils wide) Plastic SO (Small Outline) Dual In-Line (D)P a c k a g e .

Contextual Info: MITSUBISHI LSlS M 5 M 5 V 1 2 8 8 C K P ,K J ,V P - 1 5 ,-2 0 ,-2 5 N° l , o3<a'"'ä 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M 5V1288CKP,KJ,VP are a family of 131072-word by 8-bit PIN CONFIGURATION (TOP VIEW) static RAMs, fabricated with the high performance C M OS silicon

Contextual Info: SO-1066-10385/10386 ENGINEERING DATA SHEET RELAY SOCKET 5 AMP BASIC SOCKET SERIES DESIGNATION FOR: Series YA MEETS THE REQUIREMENTS OF: MIL-DTL-12883 GENERAL CHARACTERISTICS [1] Supplied with mounting hardware and No. 20 contacts and crimp for coil codes F, K SO-1066-10385 .

Contextual Info: SO-1066-10385/10386 ENGINEERING DATA SHEET RELAY SOCKET 5 AMP BASIC SOCKET SERIES DESIGNATION FOR: Series YA MEETS THE REQUIREMENTS OF: MIL-DTL-12883 GENERAL CHARACTERISTICS [1]. Supplied with mounting hardware and No. 20 contacts and crimp for coil codes F, K SO-1066-10385 .

so-1048-8518

Abstract: SO-1048-8308 TDH-8060 TDH-8070 SO-1048-8308/8518
Contextual Info: SO-1048-8308/8518 Page 1 of 2 SO-1048-8308/8518 ENGINEERING DATA SHEET RELAY SOCKET 12 AMP BASIC SOCKET SERIES DESIGNATION FOR: Series K Series TDH-8070, TDH-8080 TDH-8050, TDH-8060, VS400 DESIGNED TO THE STANDARDS AND REQUIREMENTS OF: MIL-S-12883/40 GENERAL CHARACTERISTICS