K 2018 Search Results

Contextual Info: _ I_ BS.C 01 GEN. ST. ,201843,575,00 INT. ST. 03 02 04 05 06 07 08 0D 50 60 70 80 REV. 90 DATE DESCRIPTION FOR EXAMPLE 15. J O ^ note K K K K K K K K K K K K K K K K K K K K K e 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 E E E E d 7 7 7

Contextual Info: _ I_ B S. C GEN. ST. ,201843,560.00 01 INT. ST. 03 02 10 11 12 13 U 04 05 06 07 08 0D 50 60 70 80 REV. 90 DATE DESCRIPTION BY LOADED CONNECTOR ASSEMBLY LOADING PATTERN MATING SIDE FOR EXAMPLE note 5 f K K K K K K K K K K K K K K K K

Contextual Info: irrte* P K 1IL O IM IO K 1 Ä K V 8XC196K C /8XC 196KC20 COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 87C196KC— 16 Kbytes of On-Chip OTPROM 83C196KC— 16 Kbytes ROM 80C196KC—ROMIess 16 and 20 MHz Available • Dynamically Configurable 8-Bit or 488 Byte Register RAM

Contextual Info: Firewall C o n n ecto rs M S-K /CA -K E/FRF Contact Arrangements LEGEND O Available in M S-K page 202 • Available in FRF (page 210) Circular Connectors Shell Size No. of Contacts Service Rating □ Available in CA-KE (page 206) | Available with M S polarization

Contextual Info: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active

Contextual Info: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active

P41A

Abstract: intel 8096 assembly language spcon register in 8096 C116H
Contextual Info: F K K L D R iflD K lÄ l^ f in y M80C196KB 16-BIT HIGH PERFORMANCE CHMOS MICROCONTROLLER Military • ■ ■ ■ ■ ■ ■ ■ ■ 232 Byte Register File Register-to-Register Architecture 28 Interrupt Sources/16 Vectors 2.3 / a s 16 x 16 Multiply (12 MHz

AN87C196

Abstract: AN87C196CA MCS-96 Users guide
Contextual Info: A E W Ä N K S H O K llF ISIM lÄ flrö K l in y 87C196CA/87C196CB 20 MHz ADVANCED 16-BIT CHMOS MICROCONTROLLER WITH INTEGRATED CAN 2.0 Automotive High Performance CHMOS 16-Bit CPU up to 20 MHz Operation Full Duplex Synchronous Serial I/O Port (SSIO)

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

Contextual Info: PIC17C7XX High-Performance 8-bit CMOS EPROM Microcontrollers with 10-bit A/D Microcontroller Core Features: Memory Device PIC17C752 PIC17C756A PIC17C762 PIC17C766 Program x16 Data (x8) 8K 16 K 8K 16 K 678 902 678 902 Peripheral Features: • • • •

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

am29f400bb

Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

am29f400bb

Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

Contextual Info: PRELIMINARY Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

Contextual Info: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

29F400BT

Abstract: 29F400BB
Contextual Info: ADVANCE INFORMATION AMDH Am29F400BT/Am29F400BB 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 Volt-only operation for read, erase, and program operations

A15A-N

Abstract: AM29F400BB-70EC
Contextual Info: AMDH Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

AM29F400B7

Contextual Info: PRELIMINARY Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

Contextual Info: AMD£I Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements