K 2056 TRANSISTOR Search Results

transistor K 2056

Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
Contextual Info: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz

K 2056 transistor

Abstract: 2SK777
Contextual Info: SANYO SEMICONDUCTOR Ï I Ë T 1 CORP 711707t 3 ? - 12. r - 2SK777 G0QSMb3 N-Channel M OS Silicon Fieid-Effect Transistor 2056 Very High Speed Switching Applications 2661 Features . Low ON résistance, very high-speed switching Absolute H a i l n Ratings at Ta=25°C

UPA76ha

Abstract: UPA76 IC-3532 PA76HA
Contextual Info: NEC NPN SILICON TW IN TRANSISTOR ELECTRON DEVICE MP A 7 6 H A DESCRIPTION PACKAGE DIMENSIONS The ;iiPA76HA is designed fo r use in the to p stage fo r d iffe re n tia l am plifie r o f an EQ amp. and a stereo main amp. in m illim eters inches FEATURES • Excellent pair balance

UPA74HA

Abstract: PA74HA UPA74 NEC 701 K 2056 transistor IC-3530 VCE-60 N125V
Contextual Info: NEC NPN SILICON TW IN TRANSISTOR ELECTRON DEVICE «PA74HA DESCRIPTION PACKAGE DIMENSIONS The //PA74HA is designed fo r use in the top stage for differential in m illim eters inches amplifier of an EQ amp. and astereo main amp. 3.0 MAX. 19.55 MAX FEATURES

2SK704

Abstract: TRANSISTOR C 3807 C 3807 transistor tc380
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION " 2SK704 The 2SK704 is N-Channel MOS Field E ffect Power Transistor PACAKGE DIMENSIONS designed fo r solenoid, m o to r and lamp driver. in m illim e t e r s in c h e s FEATURES

2SC2621

Abstract: ic sj 2038 TRANSISTOR ML5 sj 2038 12006A sj 2025 marking ML5 ic sj 2025 TO-220AA marking 2009a
Contextual Info: 2SC2621 NPN Triple Diffused Planar Silicon Transistor 2009A Color TV Chroma Output Applications E675A Absolute Maxi m u m Ratings at T a = 2 5 C Collector to Base Voltage CBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current

2SK681

Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE FEATURES 2S K 681 • Suitable fo r sw itching power supplies, actuater controls, PACKAGE DIMENSIONS and pulse circuits • in m illim eters inches Low R Ds(on) R DS(on) = 0 -9 5 n T Y P - •

UPA75HA

Abstract: Pa75ha upa75 IC353 NEC 701 UPA75H VCE-60 GE10000 k 3531 transistor transistor K 3531
Contextual Info: NEC PNP SILICON TWIN TRANSISTOR ELECTRON DEVICE //PA75HA DESCRIPTION PACKAGE DIMENSIONS The juPA75HA is designed fo r use in the to p stage fo r differential am p lifie r o f an EQ amp. and a stereo main amp. in m illim eters inches FEATURES • Excellent pair balance

2SK659

Abstract: 0118G xk30
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK659 The 2SK659 is N-Channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r solenoid, m o to r and lamp driver. In m illim eters inches FEATURES • 4 V Gate Drive — Logic level —

K 2056 transistor

Abstract: transistor K 2056 transistor T K 2056
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 SC 2056 is a silicon N PN epitaxial planar type transistor designed for R F power amplifiers in V H F band portable or hand-held radio applications. D im e nsions in mm

Transistor BFR 97

Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

2SK686

Abstract: ODDS445 t37h
Contextual Info: SANYO SEMICONDUCTOR 15E D I CORP T-3^-|/ 2SK686 N-Channel M O S Silicon Field-Effect Transistor 2052A <£&m 7 cH7G7ti~ DODS441 High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute H a x l M Ratings at Ta=25°C

a 1757 transistor

Abstract: ti 8ak JIS G3141 2SC1755 2SC1756 2SC1757 transistors a 1757 a 1201 sanyo
Contextual Info: SANYO SEMICONDUCTOR 1EE CORP D I 7^707^ □ □ □ 4 1 4 5 5 | T - Z Z - O V 1756 , 1757 2010A 2013 2012 NPN Triple Diffused Planar Silico n Transistors TV Chroma Output, Video Output, Sound Output Applications 4290 These 2SC1755,1756,1757 are different only from their packages.

2sd823

Abstract: case outline
Contextual Info: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" 201 oa NPN T 00[]4,i3,i ~ 3 3 - Epitaxial Planar Silicon Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25 °C Collector to Base Voltage Collector to Emitter Voltage

2SA1210

Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
Contextual Info: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage

2SC693

Abstract: sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A
Contextual Info: S AN Y O SEMICONDUCTOR CORP 12E D I T V W 07t. O O O m tO 2SC693 T'li-is' NPN Pianar Silicon Transistor 2003A ; ' " * * •> t - Low Frequency, Low IMoise Am p Applications . 2S7E Absolute M a x i i » Eatings at Ta=25°C Colleotor to Base Voltage CBO Collector to Emitter Voltage 7CE0

2SK73

Abstract: 2sk736
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK736 The 2SK736 is N-Channel MOS Field E ffect Power Transistor PACKAG E DIM EN SIO N S designed fo r solenoid, m o to r and lamp driver. in millimeters inches FEATUR ES • Gate Drive — Logic level —

2SC3174

Abstract: DDGM314
Contextual Info: SANYO SEMICONDUCTOR CORP 12E D I 2SC3174 T - 33-1 NPN Epitaxial Planar Silicon Transistor aoioA 1310B 7117071= DGG4313 C R T Display Horizontal Deflection Output Applications with Damper Diode Features: • High switching speed • Especially suited for use in high-definition CRT display(Vcc=6 to 12V)

2sc284

Abstract: 2SC2840 TRANSISTOR sanyo marking 2sc2999 2SC2999 10mmiS sanyo 2033 bc 207 npn
Contextual Info: 12E D I SANYO SEMICONDUCTOR CORP i 2SC2840 T - 3 7 W 0 '? b / - / S 0004103 ' N P N Epitaxial Planar S ilicon Transistor 2033 High Frequency GeneralPurpose Amp Applications 796C Features . FBET series. . Compact package enabling compactness of sets. High f T and small cre f T =600MHz typ, cre=0.5pF typ .

Contextual Info: SANYO SEMICONDUCTOR ÍS E CORP ^ BU508D r j 7m 07\n r ' 3 S NPN Triple Diffused Planar Silicon Transistor 2022 Horizontal Output Applications Absolute Maxlaua Batinga at Ta=25°C Collector to Base Voltage vCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage

b1181

Abstract: 2043A TRANSISTOR b1181 transistor 9-t b1252 TRANSISTOR darlington fp 1016 2SD1914 DDD3710 IC 2453 FSIM
Contextual Info: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain

2SK785

Abstract: TC3822 NEC 701
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK785 The 2SK785 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies DC-DC converters. FEATURES in m illim eters inches • Suitable fo r switching power supplies, actuater controls, and

Contextual Info: SANYO SEMICONDUCTOR CORP 15E D I ? n 7 G7 b 0 DQ4 3 4 Ö fl T-Z0-2f\ 2SC3294 201OA NPN Planar Silicon Darlington Transistor Driver Applications 1422A Duo . Switching of L load motor driver, printer hammer driver, relay driver Features . High DC current gain.

C1571 transistor

Abstract: transistor c1570 transistor c1571 c1570 2SC1571 2SC1571L b1252 TRANSISTOR ic sj 2038 sj 2025 sj 2038
Contextual Info: SANYO S E M C O N t U C T O R CORP 70, 1571, 1571L 15E » I 7Ti707ti O O D k m e T - ï n - i 2003A NPN Epitaxial Planar Silicon Transistors Very Low Noise Amp Applications 431D . The 2SC1570, 1571» 1571L are developed as very low-noise transistors and are