K 2101 MOSFET Search Results

smd MARKING r5b

Abstract: R5C MARKING CODE SOT23 k 2101 MOSFET 0402 100N 16V Y5V fdc6420c smd transistor r5c QFN-32 0-10v dimming leds cg100 smd marking code r54
Contextual Info: SMB112 Preliminary Information Five-Channel Digitally Programmable White-LED and TFT/LCD Power Manager FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I C 2 • • • • • • • interface and non-volatile memory

smd diode r5c

Abstract: smd code marking r2b FDC6420C QFN-32 inverter pwm schematic buck converter MARKING R2D SOT23 smd code r5a k 2101 MOSFET
Contextual Info: SMB112 Preliminary Information Five-Channel Digitally Programmable White-LED and TFT/LCD Power Manager FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I C 2 • • • • • • • interface and non-volatile memory

Contextual Info: IPIXYS v DSS Standard Power MOSFET IXTH10P50 IXTH11P50 -500 V -500 V p DS on ^D25 0.90 Q -10 A 0.75 Û -11 A P-Channel Enhancement Mode Avalanche Rated Preliminary data Symbol Test Conditions V„ss Tj =25°Cto150°C -500 V ^ -500 V V DOB Maximum Ratings

NX 66 DIODE

Abstract: HIP2100 HIP2101 HIP2101IB HIP2101IR TB379 dmos full bridge 100V
Contextual Info: Data Sheet July 2001 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver 1 8 LO VDD LO HIP2101 MLFP TOP VIEW VDD HB 2 7 VSS 16 15 14 13 HO 3 6 LI HS 4 5 HI HB HO Applications 12 11 10 9 1 2 3 4 9025 • Drives N-Channel MOSFET Half Bridge • Space Saving SO8 and Low RC-S Micro Leadframe

HIP2100

Abstract: HIP2101 HIP2101EIB HIP2101EIBZ HIP2101IB HIP2101IBZ IPC-2221
Contextual Info: HIP2101 Data Sheet October 21, 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate

APT806R5KN

Contextual Info: A d v a n ced po w er Te c h n o l o g y APT806R5KN 800V 2.0A 6.50Q POWER MOS IV® N -C H AN N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym b o l VDSS All Ratings: Tc = 25°C unless otherwise specified. P aram eter Drain-Source Voltage

FN9025

Abstract: HIP2100 HIP2101 HIP2101IB HIP2101IBT HIP2101IBZ HIP2101IBZT HIP2101IR dmos full bridge 100V application note for HIP2101
Contextual Info: HIP2101 Data Sheet January 2003 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC available in both 8 lead SOIC and 16 lead MLFP plastic packages. It is equivalent to

k 2101 MOSFET

Abstract: 2N6789
Contextual Info: POWER MOSFET TRANSISTORS IK 200 Volt, 0.80 Ohm N-Channel 2N679° DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching

application note for HIP2101

Contextual Info: HIP2101 Data Sheet July 2003 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC available in both 8 lead SOIC and 16 lead QFN plastic packages. It is equivalent to

HIP2101

Abstract: HIP2100 HIP2101EIB HIP2101EIBZ HIP2101IB HIP2101IBZ IPC-2221 FN9025
Contextual Info: HIP2101 Data Sheet October 21, 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate

Contextual Info: HIP2101 Data Sheet October 21, 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate

HIP2100

Abstract: HIP2101 HIP2101EIB HIP2101EIBZ HIP2101IB HIP2101IBZ IPC-2221
Contextual Info: HIP2101 Data Sheet July 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate

HIP2100

Abstract: HIP2101 HIP2101EIB HIP2101IB HIP2101IBZ HIP2101IR
Contextual Info: HIP2101 Data Sheet April 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC available in both 8 lead SOIC and 16 lead QFN plastic packages. It is equivalent to

Contextual Info: HIP2101 Data Sheet March 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC available in both 8 lead SOIC and 16 lead QFN plastic packages. It is equivalent to

2n6789

Contextual Info: UNITRODE te corp 9347963 UN I T R O D E C O R P DE7| c13M7cit!3 QG1G54Û 92D 10548 ^ D POWER MOSFET TRANSISTORS 2N6789 2N6790 200 Volt, 0.80 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability

J-STD-005

Abstract: J-STD-006 electronic grade solder alloys J-STD-006 IPC-4101 J-STD-004 solder wire 30 1N4148-1 210F JC22 s4c diode
Contextual Info: ENGINEERING PRACTICES STUDY TITLE: Soldering Heat Testing For Semiconductors October 27, 2004 STUDY PROJECT 5961-2911 FINAL REPORT Study Conducted by Alan Barone Prepared by Alan Barone I. OBJECTIVE: The objective of this project was to create guidance on how to

Contextual Info: JANSR2N7411 GB « " E S ! Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSL110R4 JANSR2N7410
Contextual Info: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 Features Description • 3.5A, 100V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

SELF vk200

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER

sem 2105

Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
Contextual Info: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: 'f ^BSS JANSR2N7410 Form erly FSL110R4 March1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, r[js ON = 0.600£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

IC SEM 2105

Contextual Info: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

AOZ1331DI

Abstract: MARKING CODE CT2
Contextual Info: AOZ1331DI Dual Channel Smart Load Switch General Description Features The AOZ1331DI is a dual channel load switch with typical 20mΩ on-resistance in a small package. It contains two n-channel MOSFETs for up to 5.5V input voltage operation and 6A current each channel with 2.5V to 5V

Contextual Info: M IC 5 0 1 2 Dual Power MOSFET Predriver General Description Features The MIC5012 is the dual member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 14-pin MIC5012 is