K 2225 TRANSISTOR Search Results

5001C

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors BDB02C PNP Silicon MAXIMUM RATINGS Rating Sym bol Value VCEO -8 0 Vdc C o lle c t o r - B a s e V olta g e VCES -8 0 Vdc E m it t e r - B a s e V o lta g e Vebo - 5 .0 Vdc A de C o lle c to r - E m itte r V oltag e

bux c

Abstract: bux26 npn 10a 800v BUX82 BUX83 Q62901-B11-A Q62901-B20 Q68000-A4676 Q68000-A4677
Contextual Info: ESC D • ô23SbG5 OOOHÔbS □ H S I E â BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T ~ 3 3 - Î 3 BUX 8 2 and BUX 8 3 are triple diffused NPN silicon pow er transistors in a case similar to TO 3 3 A 2 DIN 4 1 8 7 2 . The collector is electrically connected to the case. The transistors

Contextual Info: ESC D • 023SbG5 OOOHÖbS □ « S I E G BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T - 3 3 - i3 B U X 8 2 and B U X 8 3 are triple diffused NPN silicon power transistors in a case similar to TO 3 3 A 2 DIN 41872 . The collector is electrically connected to the case. The transistors

transistor tt 2206

Abstract: 2sc2202 2sc2202 transistor TT 2206 TT 2206 transistor hr 2206 cp 2206 CP 2207 7c 138D
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

IRFH150

Abstract: UNF 0243 IRFH150 E 9410a 1RFH150 T0210 10S4
Contextual Info: H E D § M ÔSS4SE IN T E R N A T IO N A L GOÜ ^blG 2 | Data Sheet No. PD-9.410A j R E C T IF IE R INTERNATIONAL RECTIFIER IO R HEXFET* TRANSISTORS IRFH15Q N-CHANNEL POWER MQSFETs Features: 100 Volt, 0.06 Ohm HEXFET T he HEXFET technology Is the key to International

g598

Abstract: IRFH250 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595
Contextual Info: HE 0 § Mfl554SE INTERNATIONAL 3 | Data Sheet No. PD-9.411A RECTIFIER I“ R INTERNATIONAL RECTIFIER T-39-13 HEXFET TRANSISTORS IRFHS50 N - C H A IN IIM E L M O S F E T s Features: 200 Volt, 0.090 Ohm HEXFET T he HEXFET® technology is the key to International

transistor k117

Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
Contextual Info: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100

CDR03 receiver module

Abstract: CDR03 receiver 9926 mosfet Optoelectronics Device data Zener diode smd marking code 621 "Piezoelectric Sensor" sun chemical un 1210 array resistor 9926 ceramic disc 104 aec capacitors Zener diode smd marking code w1
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book surface mount MUltilayer Ceramic chip capacitors vishay vse-db0097-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

UFN420

Abstract: UFN423 UFN421 UFN422
Contextual Info: POWER MOSFET TRANSISTORS UFN420 500 Volt, 3.0 Ohm N-Channel UFN422 UFN423 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roswm and a high transconductance. FEATURES • Fast Switching

Contextual Info: 2N6751, 2N6752, 2N6753, 2N6754 HARRIS SEMICOND SECTOR File N u m be r SbE 1244 4302271 0040b44 71fi H H A S 5-A S w itc h M a ji Power Transistors • 7 = 3 5 -/? TERMINAL DESIGNATIONS High-Voltage N-P-N Types for 240 V Off-Line Power Supplies and Other High-Voltage

Helipot

Abstract: R10K-L.25 7216-R10K-L MRF171 motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF171 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

P2QFP100-GH-1420

Abstract: IR 1838 3v with 3 pins
Contextual Info: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with

HEP89

Abstract: HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2 transistor tt 2170
Contextual Info: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The

MC10EP89

Contextual Info: MC10EP89 3.3V / 5V ECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The

DIODE F10

Abstract: f10f10 TRANSISTOR p50
Contextual Info: SFH608 Infineon APPLICATIONS Telecommunications Industrial Controls Office Machines Microprocessor System Interfaces Dimensions in inches mm pin one ID f3l Í21 Anode Optocouplers FEATURES • Very High CTR at / F=1.0 mA, VCE=0.5 V - SFH608-2,63-125% - SFH608-3,100-200%

hep89

Abstract: transistor tt 2170 HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2
Contextual Info: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The

Contextual Info: 2N6751, 2N6752, 2N6753, 2N6754 File Number 1244 5-A S w itc h M a jf Power Transistors TERMINAL DESIGNATIONS High-Voltage N -P -N Types for 240 V O ff-Line Power Supplies and O ther H igh-Voltage Sw itching Applications Features: • High-temperature parameters guaranteed

TRANSISTOR 185 846

Abstract: K 2225 transistor diode rj 93 kd62
Contextual Info: POÜJEREX INC m NBŒ X 3*\Z D • 7S b S 1 GDDMS'IM Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 92 5-7 272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43)41.14.14 7 mPRX T '22-25' KD624530 Dual Darlington

transistor D361

Abstract: m02 marking transistor 361A MSOP-8 Marking 361A ke marking transistor transistor CD 1061 1032 msop am-1360 Marking 361A 8-MSOP TDA 5555
Contextual Info: Data Sheet D361A Electr oluminescent lectroluminescent Lamp D er IC Drriv iver General Description The Durel D361 Lamp Driver is part of a family of switch-mode IC inverters intended to reduce cost, improve performance and simplify the design of EL backlighting systems. The D361 IC and three components

MH 7472

Abstract: ic 7472 ttl 7472 ttl TTL 7472
Contextual Info: SN5472, SN7472 AND-GATED J-K M ASTER-SLAVE FLIP-FLOPS WITH PRESET AND CLEAR DECEMBER 1963 - REVISED MARCH 1988 S N 5 4 7 2 . . J P AC KA G E S N 7 4 7 2 . . . N P AC K A G E Package Options Include Plastic and Ceramic DIPs and Ceramic Flat Packages TO P VIE W

LM565 equivalent

Abstract: missile irig tones ic lm565 LM107 substitution IRIG equivalent schematic of LM107 LM565 IRIG am output circuit IRIG modulator LM1596
Contextual Info: INTRODUCTION The phase locked loop has been found to be a useful element in many types of communication systems It is used in two fundamentally different ways 1 as a demodulator where it is used to follow phase or frequency modulation and (2) to track a carrier or synchronizing signal which may

MOV 270/20

Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
Contextual Info: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003

OPA2662

Contextual Info: For Im s ä iite Assistance, Contici Your Local Salesperson BURR-BROWN OPA2662 ADVANCE INFORMATION SUBJECT TO CHANGE Wide Bandwidth, Dual, Power OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION • 200MHz SMALULARGE SIGNAL BANDWIDTH The OPA2662 is a veisatile driver device for ultrawide bandwidth systems, including high-resolution

RQW200

Abstract: rqw 200 IL204 S03CH 441L204
Contextual Info: Section 22 Electrical Characteristics 22.1 Absolute Maximum Ratings Table 22-1 lists the absolute maximum ratings. Table 22-1 Absolute Maximum Ratings Symbol Value ^ ^ , flU n lt ^ v -0 .3 to +7.0 Input voltage except port 4 V in -0 .3 to VCq +0.3 ' ^ Input voltage (port 4)