K 23 MAL Search Results

5d surface mount diode mmbd4148

Abstract: 5d surface mount diode HER 300 diode MMBD4148 k 23 mal diode 5d
Contextual Info: WEITRON MMBD4148 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 100VOLTS Features: *High Speed 4ns *Low Rever Leakage Current *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K J WEITRON

Contextual Info: WEITRON MMBD4148C/A/S Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 100VOLTS Features: *High Speed 4ns *Low Rever Leakage Current *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K

5d surface mount diode mmbd4148

Contextual Info: WEITRON MMBD4148 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 100VOLTS Features: *High Speed 4ns *Low Rever Leakage Current *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K J WEITRON

5d surface mount diode mmbd4148

Abstract: 5d surface mount diode MMBD4148 ON 820
Contextual Info: WEITRON MMBD4148 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 100VOLTS Features: *High Speed 4ns *Low Rever Leakage Current *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K J WEITRON

MMBD4148C

Abstract: a7 surface mount diode MMBD4148A MMBD4148S sot-23 A4 ON 820
Contextual Info: WEITRON MMBD4148C/A/S Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 100VOLTS Features: *High Speed 4ns *Low Rever Leakage Current *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K

tc144e

Abstract: transistor tc144e PDTC144EEF PDTC144ET PDTC144EE, PDTC144ET, PDTC144EU PDTC144E PDTC144EE PDTC144EK PDTC144EM PDTC144ES
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC144E series NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2004 Mar 23 2004 Aug 17 Philips Semiconductors Product specification NPN resistor-equipped transistors;

Contextual Info: TGA4534-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio  K-band Sat-Com TGA4534SM 1201 MAL AC0753 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 17.7 – 19.7 GHz Power: 34 dBm Psat, 33 dBm P1dB Gain: 21 dB TOI: 42.5 dBm at 23 dBm/tone

Contextual Info: TGA4534-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio  K-band Sat-Com TGA4534SM 1201 MAL AC0753 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 17.7 – 19.7 GHz Power: 34 dBm Psat, 33 dBm P1dB Gain: 21 dB TOI: 42.5 dBm at 23 dBm/tone

Contextual Info: TGA4535-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio  K-band Sat-Com TGA4535SM 1201 MAL AC0776 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 21.2 – 23.6 GHz Power: 34 dBm Psat, 32 dBm P1dB Gain: 22 dB TOI: 40 dBm at 23 dBm/tone

Contextual Info: TGA4535-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio  K-band Sat-Com TGA4535SM 1201 MAL AC0776 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 21.2 – 23.6 GHz Power: 34 dBm Psat, 32 dBm P1dB Gain: 22 dB TOI: 40 dBm at 23 dBm/tone

Contextual Info: TGA4536-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio  K-band Sat-Com TGA4536SM 1201 MAL AC0490 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 24.2 – 26.5 GHz Power: 34 dBm Psat, 33 dBm P1dB Gain: 18 dB TOI: 43 dBm at 23 dBm/tone

marking d88 sot23

Abstract: D87 SOT23 smd marking sc w sot-23 D86 smd smd marking sc sot-23 BAT54SFILM SMD DIODE BAT54 SC BAT54C SOT23 BAT54 BAT54C
Contextual Info: BAT54, A, C, S SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS A VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K1 K A K2 A K2 K BAT54A BAT54 DESCRIPTION A1 Schottky barrier diodes encapsulated in a SOT-23

BAR42FILM

Abstract: BAR43AFILM BAR43CFILM BAR43FILM BAR43SFILM BAR43
Contextual Info: BAR42FILM BAR43/A/C/SFILM SMALL SIGNAL SCHOTTKY DIODES K A K1 N.C. K2 A BAR42FILM BAR43FILM BAR43AFILM A1 K2 K K1 DESCRIPTION A1 A2 General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. A2 BAR43SFILM BAR43CFILM SOT-23

PDTD113ZT

Abstract: TRANSISTOR SMD MARKING CODES BC817 PDTB113ZT PDTD113ZK PDTD113ZS
Contextual Info: PDTD113ZT NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 02 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description NPN 500 mA Resistor-Equipped Transistor RET in a small Surface-Mounted Device (SMD) plastic package.

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE 3 EQUIVALENT 3 K A A K 2 2 1 SOT-23 MARKING 3 *Pb-free plating product number: BAV99L V99 2 1 PIN CONFIGURATION PIN NO. PIN NAME 1 K1 2 A2 3 K2, A1 1 ORDERING INFORMATION Order Number

Contextual Info: Preliminary User’s Manual µPD98502 Network Controller Document No. S15543EJ1V0UM00 1st edition Date Published December 2001 NS CP(K) 2001 Printed in Japan [MEMO] 2 Preliminary User’s Manual S15543EJ1V0UM SUMMARY OF CONTENTS CHAPTER 1 INTRODUCTION . 23

Contextual Info: User’s Manual µPD98501 Communication Controller Document No. S14767EJ2V0UM00 2nd edition Date Published April 2002 NS CP(K) 1999 2000 Printed in Japan [MEMO] 2 User’s Manual S14767EJ2V0UM SUMMARY OF CONTENTS CHAPTER 1

HM5165405FJ-5

Abstract: Hitachi DSA00174
Contextual Info: HM5164405F Series HM5165405F Series 64 M EDO DRAM 16-Mword x 4-bit 8 k Refresh/4 k Refresh ADE-203-1056C (Z) Rev. 3.0 Feb. 23, 2000 Description The Hitachi HM5164405F Series, HM5165405F Series are 64M-bit dynamic RAMs organized as 16,777,216-word × 4-bit. They have realized high performance and low power by employing CMOS

Hitachi DSA00174

Contextual Info: HM5164805F Series HM5165805F Series 64 M EDO DRAM 8-Mword x 8-bit 8 k Refresh/4 k Refresh ADE-203-1057C (Z) Rev. 3.0 Feb. 23, 2000 Description The Hitachi HM5164805F Series, HM5165805F Series are 64M-bit dynamic RAMs organized as 8,388,608-word × 8-bit. They have realized high performance and low power by employing CMOS process

information applikation

Abstract: Mikroelektronik Information Applikation B305D B304D eft 317 transistor information applikation mikroelektronik B303D Kombinat VEB A 301 A301D "information applikation"
Contextual Info: LnnJÖD=^Jj i ^ j s l E k t j P D n i k Information Applikation B 303 D B 304 D B 305 D B 306 D m ölkr^elel-ctsnariik Information Applikation Heft: 23 INITIATOREN-IS B303D- B 304D B 305D *B 306D VEB. Halbleiterwerk FrankfurtïOder im VEB Kom binat Mikroelektronik,

BAS43

Abstract: BAS43A marking db2 bar43c BAR42 BAR43 BAR43A BAR43C BAR43S L 43 diodes
Contextual Info: BAR 42 BAR 43, A, C, S SMALL SIGNAL SCHOTTKY DIODES A K K1 N.C. K2 A BAR42/BAR43 BAR43A A1 K2 K K1 A1 A2 A2 BAR43C DESCRIPTION General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. BAR43S SOT 23 Plastic ABSOLUTE RATINGS (limiting values) (Tamb = 25°C) (see note 1)

BAP51

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP51-05W General purpose PIN diode Product specification 2001 Jan 23 Philips Semiconductors Product specification General purpose PIN diode BAP51-05W FEATURES PINNING • Two elements in common cathode configuration in a

AY30

Abstract: F2045
Contextual Info: 70 mm 2.75" 19 43 18 42 17 41 16 40 15 39 14 38 13 37 12 36 11 35 10 34 9 33 8 32 7 31 6 30 5 29 4 28 3 27 2 26 1 S MALE 5 50 25 49 24 48 23 47 22 46 21 45 20 44 150 mm (5.91") 50 49 25 25 TB1:A 24 TB1:C 23 TB1:E 22 TB1:G 21 TB1:I 20 TB1:K 19 TB1:M 18 TB1:O

800-034, -056, -041, and -057 Ordering Information

Abstract: Series 800
Contextual Info: Series 800 Series 800 Mighty Mouse with UN Mating Thread Overmolded Cordsets 800-034, -056, -041, and -057 Ordering Information Series 800 Cordsets with #23 Contacts Sample Part Number 2 M Wire Shell Material/ Series Plug Style Size Finish 800-034 -A A K 2