K 2746 Search Results

Contextual Info: CY14B108K CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)

Contextual Info: CY14B108K, CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)

Contextual Info: CY14B108K CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)

Contextual Info: CY14B108K, CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)

AN4359

Abstract: CY14B108
Contextual Info: CY14B108K, CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)

Contextual Info: CY14B108K, CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16

Contextual Info: CY14B108K, CY14B108M 8 Mbit 1024 K x 8/512 K x 16 nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 1024 K x 8 (CY14B108K) or 512 K × 16 (CY14B108M)

Contextual Info: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)

Contextual Info: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)

Contextual Info: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)

Contextual Info: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)

Contextual Info: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)

CY14B256LASZ25XI

Abstract: CY14B256LA-SZ25XI
Contextual Info: CY14B256LA 256-Kbit 32 K x 8 nvSRAM 256-Kbit (32 K × 8) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 32 K × 8 (CY14B256LA) ■ Hands off automatic STORE on power-down with only a small capacitor ■

CY14B256LASZ25XI

Abstract: CY14B256LA-SZ25XI
Contextual Info: CY14B256LA 256-Kbit 32 K x 8 nvSRAM 256-Kbit (32 K × 8) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 32 K × 8 (CY14B256LA) ■ Hands off automatic STORE on power-down with only a small capacitor ■

CY14B256LASZ25XI

Abstract: CY14B256LA-SZ25XI
Contextual Info: CY14B256LA 256-Kbit 32 K x 8 nvSRAM 256-Kbit (32 K × 8) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 32 K × 8 (CY14B256LA) ■ Hands off automatic STORE on power-down with only a small capacitor ■

1 MEGA OHM PRESET

Abstract: 2.2 KILO OHM RESISTOR CY14B256LASZ25XI CY14B256LA-SZ25XI preset 2 mega ohm
Contextual Info: CY14B256LA 256-Kbit 32 K x 8 nvSRAM 256-Kbit (32 K × 8) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 32 K × 8 (CY14B256LA) ■ Hands off automatic STORE on power-down with only a small capacitor ■

Contextual Info: M K 2/12 SLS2/2 SLS2/4 D irect M ount Term inals Feed Through M K 10/14 M K 3/12 m; O j- Hi e o .e s Dim ensions W idth/Length/Height mm mm in. Insulation stripping length mm mm (in.) 8.5 / 13.5 / 12 (3.48/.53/.47J 8 6 / 1 5 / 1 5 (3.39/.S9/.59)

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

CY14B256LA-SZ25XI

Abstract: CY14B256LA CY14B256LA-ZS25XIT AN1064 CY14B256LASZ25XI
Contextual Info: CY14B256LA 256-Kbit 32 K x 8 nvSRAM 256 Kbit (32K x 8) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 32 K × 8 (CY14B256LA) ■ Hands off automatic STORE on power-down with only a small capacitor ■

ta 8268 ah

Contextual Info: CSR13 MIL-C-39003/01 Solid Tantalum Capacitors I l i l U D I I I I I I I K I I I S C C a V I l I K K C t i 2 i l l i a i S I t l X i S l l l l C I S GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates I I I E I g l t f S i l f g s DC Leakage: