K 3053 Search Results

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous

Contextual Info: CYDMX256A16/CYDMX256B16 CYDMX128A16/CYDMX128B16 CYDMX064A16/CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous

eurosil

Abstract: ic tda 6108 tda 9351 SE116 BH 37 933 Eurosil Electronic tfk 635 EL131 TDA 785 LA
Contextual Info: Te m ic TELEFUN KEN Semiconductors Addresses Sales Offices Europe Hungary Sweden T E M IC D a n sk T EM 1C T E L E FU N K E N T E M IC T E L E F U N K E N T E M IC N o rd ic A B c /o A E G D a n s k A k tie s e ls k a b m ic ro e le c tro n ic ìm h H K r u p p s tr a s s e 6

M3215RR

Contextual Info: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 info@petermann-technik.com ∙ www.petermann-technik.com SMD WATCH CRYSTAL 32.768 kHz SERIES M3215RR 50 kΩ FEATURES + + + + + Reduced Resonance Resistance 50 kΩ max.

zn1613

Abstract: NKT0028 BFX84 T018
Contextual Info: NPN Silicon Transistors IMPN S ilicon Transistors fo r high level audio applications Type Characteristics; at T.amb =25 C M a xim um ratings Case B F X 84 B F X 85 T05 T05 B F X 86 B F Y 50 B F Y 51 B FY 52 B F Y 53 N K T 0028 N K T 0128 N K T 10339 N K T 10439

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

TMS240

Contextual Info: Model www.teltron.com TMS240 K-Band Motion Sensor Applications Features TMS240 is a small sized K-band Doppler motion sensor to detect motion. It consists of low current P-HEMT oscillator and separated Tx/Rx patch antennas and provides most reliable solution in

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

CY7C1350G

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

ta 8268 ah

Contextual Info: CSR13 MIL-C-39003/01 Solid Tantalum Capacitors I l i l U D I I I I I I I K I I I S C C a V I l I K K C t i 2 i l l i a i S I t l X i S l l l l C I S GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates I I I E I g l t f S i l f g s DC Leakage:

90 nm CMOS

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

5252 F 0911

Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
Contextual Info: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Functional Description Features • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

A8299

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

CY7C1399BN

Abstract: CY7C1399BN-12VXC CY7C1399BN-12VXI CY7C1399BN-12ZXC CY7C1399BN-15VXA CY7C1399BN-15ZXI CY7C1399BNL-12ZXC CY7C1399BNL-15VXC CY7C1399BNL-15VXCT
Contextual Info: CY7C1399BN 256 K 32 K x 8 Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ❐ Commercial: 0 °C to 70 °C ❐ Automotive-A: –40 °C to 85 °C ■ Single 3.3 V power supply The CY7C1399BN is a high-performance 3.3 V CMOS Static