K 3053 TRANSISTOR Search Results

K 3053

Abstract: 2N3053 2n 3053
Contextual Info: M A XIM U M RATINGS Symbol 2N 3053 2N 3053A Unit C o lle c to r -E m itte r V o lt a g e ll v CEO 40 60 V dc C o lle c to r-B a s e V o lta g e VCBO 60 80 V dc E m itte r-B a s e V o lta g e vebo Rating C o lle c to r C u rre n t — C o n tin u o u s <C

2N5660

Abstract: 2N5662
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN FEATURES • Meets MIL-S-19500/454 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JANTX, JANTX, JANTX, JANTX, & & & & JANTXV

LSE B9

Abstract: LSE B6
Contextual Info: IUCROSENI CORP/ ÜIATERTOÜIN 50E » T347Tb3 POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN D O lS im JANTX, JANTX, JANTX, JANTX, & & & & 5R4 • U N I T JANTXV JANTXV JANTXV JANTXV 2N 5664 2N 5665 2N 5666 2N 5667 T -33-07 F EA T U RE S • Meets MIL-S-19500/455

JANTX 2N5666

Abstract: cfs 455 j 2N5664 2N5665 2N5666 JANTXV 2N5666 Jt 3026 j Unitrode transistors data To5 2N5667 3041 v
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N5664 2N5665 2N5666 2N5667 FE A T U R E S D ESCR IP TIO N • • • • • Unitrode high voltage transistors provide a unique combination of low saturation

2N5862

Abstract: 2N5660 3051 3026LS 2N5680 3036 100CC 2N5661 2N5662 2N5663
Contextual Info: JAN, JAN, JAN, JAN, POWER TRANSISTORS 2 Amp, 300V, Planar NPN FEA TU R ES • Meets MlL-S-19500/454 • Collector-Base Voltage: up to 400V » D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JANTX, JANTX, JANTX, JANTX, & JANTXV 2N5660

Contextual Info: M I C R O S E H I CO RP / IdATERTOüJN 5ÜE D • POWER TRANSISTORS ^347^3 JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN D G I S M Ö R 127 M U N I T JANTX, JANTX, JANTX, JANTX, & & & & JANTXV JANTXV JANTXV JANTXV 2N5660 2N5661 2N5662 2N5663 FEATURES D E S C R IP T I O N

2N5664

Abstract: cc 3053
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, FEATURES • Meets MIL-S-19500/455 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JA N , JA N T X ,

F941

Abstract: 2N6671 2N6673
Contextual Info: M I L —S —19500/536{USAF AMENDMENT 3 8 Sep tem b er 1987_ SUPERSËDING AMENDMENT 2 7 F e b r u a r y 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVI CE, TRANSISTOR, NPN, S I L I C O N , POWER TYPES 2N6671, AND 2N6673, JAN, JANTX, AND JANTXV This

3053 TRANSISTOR

Abstract: transistor 3053 2N3053
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung • High current gain

zn1613

Abstract: NKT0028 BFX84 T018
Contextual Info: NPN Silicon Transistors IMPN S ilicon Transistors fo r high level audio applications Type Characteristics; at T.amb =25 C M a xim um ratings Case B F X 84 B F X 85 T05 T05 B F X 86 B F Y 50 B F Y 51 B FY 52 B F Y 53 N K T 0028 N K T 0128 N K T 10339 N K T 10439

TT 6053

Abstract: tic 253
Contextual Info: FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • ■ R CD’s FR series was designed to obtain the best from two devices. It com bines the perform ance of a precision grade resistor with precisely controlled fusing characteristics.

K 3053 TRANSISTOR

Abstract: k 246 transistor
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness

RCA-2N3053

Abstract: rca 2N3053 2n3053 RCA 2N3053
Contextual Info: E SOLID STATE 3875081 G E Dl SOLID STATE jjü f| 3 Ö 7 S 0 Ö 1 0G171D1 01E D 17101 □ | 7^ - ¿ 7 - H ig h-S p eed Pow er 2N3053, 2N3053A File Number 960 General-Purpose, Medium-Power

MPS 4355 transistor

Abstract: mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor
Contextual Info: 6091788 MICRO ELECTRONICS CORP ~~ä5 _ * 82D 00661 DE |bGT17fifl GGGDbbl 2 | Medium Power Am plifiers and Switches X P O L A R IT Y M AXIM UM R A T IN G S CASE PN PN PN PN PN 3568 3569 3638 3638A 3641 N N P P N TO-92A TO-92A TO-92A TO-92A TO-92A 625 625 625

bc140

Abstract: ZT152 BC141 bc109 2N2102 2N4036 BC161 BCY65E BCY77 ZT189
Contextual Info: PNP GENERAL PURPOSE TA BLE2 PNP SILICON PLANAR G EN ER A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

BFG97

Abstract: BFG31 MBB350
Contextual Info: Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 PIN N IN G FEA TUR ES • High output voltage capability PIN D E S C R IP TIO N • High gain bandwidth product 1 • Good thermal stability 2 base • Gold metallization ensures

diode cc 3053

Abstract: cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2n3771 2N3772 K 3053 TRANSISTOR MIL-PRF19500
Contextual Info: This documentation process conversion measures necessary to comply with this revision shall be completed by 30 September 1999 INCH-POUND MIL-PRF-19500/413C 30 July 1999 SUPERSEDING MIL-S-19500/413B 24 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

bfg97

Abstract: BFG31 TRANSISTOR FQ 4D4 TRANSISTOR 453.25
Contextual Info: Philips Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability PIN DESCRIPTION • High gain bandwidth product 1 • Good thermal stability 2 base • Gold metallization ensures excellent reliability.

diode cc 3053

Abstract: cc 3053 diode cc 3053 2N6383 2N6384 2N6385 MIL-PRF19500 marking 4D npn
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 June 2009. MIL-PRF-19500/523C 16 March 2009 SUPERSEDING MIL-PRF-19500/523B 10 August 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER

Q62702-P43-S2

Contextual Info: Si-Fotodetektoren Silicon Photodetectors 1. Integrierter Empfänger für Fernbedienungen 1. Integrated Remote Control Receiver Gehäuse Package Bestrahlungsstärke Threshold irradiance f kHz Halbwinkel Half angle <1> 30 ±55 0.35typ 0.5 max. Bestellnr. Ordering code

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 March 2013. INCH-POUND MIL-PRF-19500/262G 6 December 2013 SUPERSEDING MIL-S-19500/262F 19 February 1969 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

scr 2n4444

Abstract: light operated scr alarm MRD3056 photo transistor mrd3056 2n4444 transistor NPN 2n4444 MRD3050 color sensitive PHOTO TRANSISTOR 2n5060 transistor MRD3055
Contextual Info: MRD3050 silicon thru MRD3056 NPN SILICON PHOTO TRANSISTOR . . . designed fo r application in industrial inspection, processing and control, counters, sorters, switching and logic circuits or any design requiring radiation sensitivity, and stable characteristics.

Contextual Info: SPRAGUE/SEÎ1IC0ND GROUP 8 5 1 4 0 1 9 SP RA G UE . T3 D • SEMICONDS/ IC S 0513050 QD03bll =1 ■ 93D 03611 $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S o H Limits Igss V(flR]GSS Conditions

Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 01 9 SPRAGUE. ^3 D • flS13A5Q Q003b i o T " | i S E M I C O N D S / ICS 9 3 D 0 3 6 1 0 3> 7 ^-Z.f-Z.S SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh V(BR]GSS