K 3569 7.G EQUIVALENT Search Results

Contextual Info: 16 15 14 13 12 11 $ 10 a A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M DWG STATUS MISSING SYMBOLS SYMBOL DEFINITION TOTAL NO OF INSPECTIONS REQUIRED LAST NO. USED

mrf182

Abstract: MRF182R1 MRF182SR1 945 mosfet NI-360
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182R1 MRF182SR1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device

MHW1244

Contextual Info: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and

Contextual Info: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and

MHW1224

Abstract: CTB22
Contextual Info: Freescale Semiconductor, Inc. Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. The RF Line MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion

MHW1244

Abstract: XMD26
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 CATV Amplifier Module Features • • • • Specified for 12–, 22– and 26–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature

MHW1224

Abstract: XM26
Contextual Info: MOTOROLA Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and

MHW1244

Abstract: DEVICE T76
Contextual Info: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 CATV Amplifier Module Features • • • • Specified for 12–, 22– and 26–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature

Contextual Info: Freescale Semiconductor, Inc. Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. The RF Line MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion

SMD Transistor z6

Abstract: 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS
Contextual Info: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

MRF1090MA

Abstract: microwave transistor
Contextual Info: MOTOROLA Order this document by MRF1090MA/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF1090MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

MRF373A

Abstract: MRF373ALSR1 MRF373AR1 MRF373AS 845MHz
Contextual Info: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF373A

Contextual Info: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

smd wb1

Abstract: smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090A MRF18090AS
Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

zo 405 mf

Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

H6050

Abstract: Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805
Contextual Info: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

smd transistor wb1

Abstract: wb1 sot package sot-23
Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

MRF373A

Abstract: MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay
Contextual Info: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF18060

Abstract: BC847 GSM1900 GSM1930 LP2951 MRF18060B MRF18060BS RF Power Transistor MRF18060B MRF18060
Contextual Info: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

J5-18

Abstract: MRF18085A
Contextual Info: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with

Motorola transistors M 724

Contextual Info: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

400S

Abstract: MRF18030A MRF18030AR3 MRF18030ASR3
Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF18030A

Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022
Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies