K 524 IR Search Results

Contextual Info: . TPS 524 / 534 |k Xvv:": • High Signal Voltage • Low Temperature Coefficient of Responsivity BISS ;•; .■ ; ! 11111 • Low Time Constant The sensor TPS 524 consists of a series of thermoelements forming a sensitive area ■B H I ■ Typical Reid of View

ic 7455

Abstract: t523 an 6185 SM 6185
Contextual Info: ID l.tìS U L9 4 V -0 2„ X - v + t i S K jSSB O. I u mM I N. : # W X '> + T±feX-v+ 1.0 u m M I N . LO umM I N. — : 3. n o v y 'J o m A ^ 4 .i t n a w p : t =l.6±0.05 A '¿ mm m 6. : 52326-* I, 52368-*»* I 52409-* I, 524 10-* I 524 11-* I „

4800L

Abstract: IC-3052B 1PD42S4800L-A70 424800L uPD424800-L
Contextual Info: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ / juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability

Contextual Info: NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The ¿iPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

424800-70

Abstract: nec 424800 JPD42S4800 PD424800LE-70 424800L 424800g5
Contextual Info: NEC MOS INTEGRATED CIRCUIT juPD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /zPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

424800-70

Abstract: 42s4800 2716D nec 42s4800 UPD 552 C 424800-80 NEC D 553 C 574 nec uPD424800 nec 2716d
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The J2PD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

UPD42S4800-70

Contextual Info: NEC b l4S7S2S O Om iD*! m • NECEj A T A SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /IPD42S4800, 424800 are 524 288 words by 8 bits dynam ic CMOS RAMs. The fast page mode capability

4800L

Abstract: IC-3052B uPD424800 UPD42S480
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: NEC DATA SHEET MOS INTEGRATED CIRCUIT juPD42S4805A, 424805A 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, HYPER PAGE MODE Description The ftPD42S4805A, 424805A are 524 288 words by 8 bits dynamic CMOS RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.

UPD42S4805A

Abstract: nec d 588
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / juPD42S4805A, 424805A 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, HYPER PAGE MODE D escription The /JPD42S4805A, 424805A are 524 288 w ords by 8 bits dynam ic CMOS RAMs w ith optional hyper page mode. Hyper page mode is a kind o f page mode and is useful for the read operation.

doc-70

Abstract: c431a
Contextual Info: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since

MSM538002C

Abstract: SM535
Contextual Info: O K I Semiconductor MSM538002C r 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit Mask ROM ~~ ~ D E S C R IP TIO N The OKI MSM538002C is a high-speed CMOS Mask ROM that can electrically switch between 524 288word x 16-bit and 1,048 576-word x 8-bit configurations. The MSM538002C operates o n X * 5 0 V

Contextual Info: •H Y U N D A I HY62VB4DD Series 5 1 Z K N B - b il C M O S 5R A M PREUMINAHY DESCRIPTION TVib HYSZV8400 is a high-speBd, law power and 524,ZBfl x B-bits CMOS static RAM fabricated using Hyundai's high perform ance twin tub CMOS pro c b s s technology. The HY52VB400 has a data retention m ode that guarantees

d4516161

Abstract: MPD4516421
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524 ,288 x 16 x 2 w ord x bit * ban k}, respectively.

b32534

Contextual Info: B 32 524 MKT -1 I- - O rd e rin g c o d e s a n d p a c k in g u n its , le a d s p a c in g 2 7,5 m m Cr M a x im u m O rd e rin g c o d e 1 d im e n s io n s hy. f i x / m m ) ( Km , . f < 60 Hz) P a c k in g u n its (pcs) Ammo Reel

Contextual Info: tiM27SSS □ □ 4 1 b cl2 2TÛ ATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S4800L, 424800L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ^PD42S4800L, 424800L are 524 288 w o rd s b y 8 b its d yn a m ic CMOS RAM s. The fa st page m ode ca p a b ility

Contextual Info: O K I semiconductor MSC2330A-XXYS4/KS4_ 524 ,28 8 Word BY 8 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION T h e O ki M S C 2 3 3 0 A -x x Y S 4 /K S 4 is a fully decoded, 5 2 4 ,2 8 8 word x 8 bit C M O S dynam ic random access m emory com posed of four 1Mb D R A M s in SOJ M SM 514256A JS . T h e m ounting of four SOJs

MSM538022C

Contextual Info: O K I Semiconductor MSM538022C 524,288-W ord x 16-B it o r 1,048,576-W ord x 8 -Bit M ask ROM DESCRIPTION The OKI MSM538022C is a high-speed CMOS M ask ROM th at can electrically sw itch betw een 524 288w o rd x 16-bit a n d 1,048 576-w ord x 8-bit configurations. The MSM538022C o perates o n T s in i 5 0 V

Contextual Info: I • b 4 2 7 5 5 5 D O M l ^ 5 7 b M N E C E À T A NEC S H E E T MOS INTEGRATED CIRCUIT /¿PD42S4900, 424900 4 M BIT DYNAMIC RAM 512 K-WORD BY 9-BIT, FAST PAGE MODE DESCRIPTION ★ The /iPD42S4900, 424900 are 524 288 w ords by 9 bits dynam ic CMOS RAMs. The fast page m ode cap ab ility

MSM27C421AZB

Contextual Info: O K I Semiconductor MSM27C421AZB 524,288-Word x 8-Bit One Time PROM D E S C R IP T IO N The MSM27C421AZB is a 4 M b electrically P rogram m ab le R ead-O nly M em ory o rg an ized as 524 288 ^ rM S M 2 7 C 4 2 1 AZBSM27Cf421 AZB ° p8rateS ° n 3 sinSle 5 V Pow er su PPlv an d is TTL com patible. Since

TRANSISTOR C 557 B

Abstract: TRANSISTOR N3
Contextual Info: Non-Pulse M odulated Features • E a s y o p e ra tio n m o n ito r in g w ith red L E D in d ic a to r ■ R e s p o n s e fre q u e n c y as h ig h a s 1 K H z ■ W id e o p e ra tin g v o lta g e , 5 -2 4 V D C ■ A m p lifie r o u tp u t ca n be c o n n e c te d d ire c tly to P L C , T T L a n d re lays

9904 120

Abstract: 9904 120 motor carbon brush motor carbon Brushes dc motor dc motor 60 rpm power rpm sheet of motor 9904 K3030
Contextual Info: PRODUCT SPECIFICATION FOR DC MOTOR MODEL: TYPE: 1. Type indication 1.1 1.2 1.3 1.4 2. Spark suppression Direction of rotation Rotor Nominal data: Varistor Reversible Ironcore See sheet 4&5 Electrical data of motor 2.1 2.2 2.3 2.4 2.5 2.6 3. 4 Watt 9904 120 52401-9904 120 52711