K 815 MOSFET Search Results

Contextual Info: Advanced Power Electronics Corp. Preliminary APE1533-HF-3 2MHz, 3A Synchronous Step Down Converter Description Features Two internal MOSFETs with typical Rds on The APE1533 is a synchronous step-down converter of 50mΩ for high efficiency at 3A loads with integrated MOSFETs. The current-mode PWM

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

k 815 MOSFET

Abstract: FH2164
Contextual Info: FH2164 RF Power MOSFET Transistor 8W, 30-90MHz, 12V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device Meets CECOM drawing A3012715 Designed for frequency hopping systems 30-90 MHz Lower capacitances for broadband operation

SMG2302N

Abstract: MosFET k 815 MOSFET
Contextual Info: SMG2302N 3.4 A, 20 V, RDS ON 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to

L0025

Abstract: LF2802A f10 transistor
Contextual Info: A títcor. W an AMP company RF MOSFETPower Transistor, 2W, 28V 500-1000 MHz LF2802A V2.00 Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor

MOSFET 818 ln

Contextual Info: LN D 1 E incN-Channel Depletion-Mode MOSFET Ordering Information B Vdsx / Order Number / Package f*DS OH '□(ON) b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£2 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89 Features Advanced DMOS Technology 7! ESD gate protection

WN 1461

Contextual Info: ytâMOü w an A M P com pany RF MOSFETPower Transistor, 2W, 28V 500 -1000 MHz - A - Features • • • • • • LF2802A - B - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration

rY-216

Abstract: td1410 ms 7254 ver 1.1 intel 815 intel schematics B56 smd transistor 82801AB AP-585 PGA370 PGA370 pinout
Contextual Info: R Intel 815 Chipset Platform Design Guide June 2000 Document Reference Number: 298233-001 Intel® 815 Chipset Platform R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

pin configuration NPN transistor c458

Abstract: NPN C458 10-25 L w7 Tantalum Capacitor smd serial number of internet manager intel Chipset CRB Schematics intel fw 82815 741G08 PC MOTHERBOARD intel 815 circuit diagram Transistor Q2N3904 NPN C460
Contextual Info: R Intel 815 Chipset Platform For Use with Universal Socket 370 Design Guide April 2001 Document Number: 298349-001 R ® Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

BAT 545

Contextual Info: APT8067HVR • R A d va n ce d W/Æ PO W ER Te c h n o l o g y 800V 11.5A 0.67Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

transistor t2a

Abstract: U 318 m t2a transistor UF2820P
Contextual Info: M an A M P com pany RF MOSFET Power Transistor, 20W, 28V 100 -500 MHz UF2820P V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure I.ower Capacitances for Broadband O peration Com m on Source C onfiguration Lower Noise Floor

P channel MOSFET 10A schematic

Abstract: PN channel MOSFET 10A OM20P10ST OM9326SC pch 1275
Contextual Info: OM9326SC DUAL MOSFETS IN 5 PIN HERMETIC SIP PACKAGE, N & P CHANNEL Complementary 100V N-Channel And P-Channel Power MOSFETs In 5 Pin Hermetic SIP Package FEATURES • LOW RoS on • • • • Fast Switching Easy To Heat Sink Small Isolated Hermetic Package

Contextual Info: APT1001R1HVR ADVANCED POW ER Te c h n o l o g y 1000V 9A 1.1000 POWER MOSV Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

irfip350

Contextual Info: 4055452 International k ?r Rectifier INR t4T PD-9.749 IRFIP350 INTER NAT IONAL RECTIFIER b5E D HEXFET Power MOSFET • • • • • • • 0015334 Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm

047N08P

Abstract: 047N08
Contextual Info: SEMICONDUCTOR KU047N08P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,

ed 76a

Abstract: IRFS9240 IRFS9241
Contextual Info: P-CHANNEL POWER MOSFETS IRFS9240/9241 FEATURES • Lower Rdswnq • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

LF2810A

Abstract: lf2810
Contextual Info: LF2810A RF Power MOSFET Transistor 10W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration

07 j330

Abstract: LF2802A J120 MOSFET transistor rf J330 k 815 MOSFET
Contextual Info: LF2802A RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration

Contextual Info: LF2805A RF Power MOSFET Transistor 5W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration

UF2815B

Abstract: k 815 MOSFET
Contextual Info: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration

LF2805A

Abstract: J286
Contextual Info: LF2805A RF Power MOSFET Transistor 5W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration

Contextual Info: LF2802A RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration

PSMN1R2

Abstract: PSMN1R2-25YL
Contextual Info: PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration