K 9659 Search Results

Contextual Info: P D -9.1648 International ÏQ R Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a or 33 K a err HP K

IRF7524D1

Abstract: IR IL 070 503 11 02 HEXFET SO-8
Contextual Info: PD -91648C IRF7524D1 PRELIMINARY FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -20V

10mhz mosfet

Abstract: IRF7534D1 3A 300V Schottky Diode
Contextual Info: PD -93864 IRF7534D1 FETKY MOSFET & Schottky Diode HEXFET Co-packaged power MOSFET and Schottky diode ● Ultra Low On-Resistance MOSFET ● Trench technology TM Footprint ● Micro8 ● Available in Tape & Reel Description ● 1 8 K A 2 7 K S 3 6 D G 4 5

IRF7521D1

Abstract: 9164
Contextual Info: PD-91646C IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 VDSS = 20V

IRF7521D1

Abstract: ba 7321
Contextual Info: PD- 91646B IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A

IRF7523D1

Contextual Info: PD- 91647C IRF7523D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A

IRF7523D1

Contextual Info: PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 30V

ir*526

Abstract: IRF7526D1
Contextual Info: PD -91649C IRF7526D1 FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Description A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -30V

ir*526

Abstract: HEXFET SO-8 IRF7526D1
Contextual Info: PD -91649B IRF7526D1 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -30V

IRF7524D1

Contextual Info: PD -91648B IRF7524D1 PRELIMINARY FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V

IRF7101

Abstract: IRF7324D1
Contextual Info: PD- 91789 IRF7324D1 PRELIMINARY FETKY MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V RDS on = 0.18Ω

Contextual Info: International I R Rectifier pd-916si IRG4PSC71U INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • U ltra F a s t sw itching s p e e d o ptim ized for operating V freq u en cies 8 to 4 0 k H z in hard sw itching, 2 0 0 k H z ces = 600V in reso nan t m ode soft switching

Contextual Info: PD -9.1599 International K g l Rectifier IRG4BC20KD PREUMNARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short

Contextual Info: Data Sheet No. PD-6.060D nternationai K JR Rectifier IR51HD310 SELF-OSCILLATING HALF-BRIDGE Features Product Summary • Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation

transistor 20607

Abstract: smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE 2x 20607 SMD TRANSISTOR MARKING 9bb PD-20607 TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD 2x t HFA08TB6 TRANSISTOR SMD 2X K
Contextual Info: Preliminary Data Sheet PD -20607 rev. A 01/99 HFA08TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits

TRANSISTOR SMD 9bb

Abstract: SMD TRANSISTOR MARKING 9bb smd TRANSISTOR code marking 2F smd marking dt2 smd transistor 2f x TRANSISTOR SMD MARKING CODE 360 9936 transistor
Contextual Info: Preliminary Data Sheet PD-20602 rev. A 01/99 HFA06TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits

smd TRANSISTOR code marking 2F

Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
Contextual Info: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits

Contextual Info: P D -9.1584 International IG R Rectifier IRG4PC40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 k H z , and Short

smd TRANSISTOR code marking 2F

Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD 9bb smd transistor 2f transistor D207 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 207 TRANSISTOR SMD MARKING CODE 2F transistor smd code marking tm
Contextual Info: Preliminary Data Sheet PD-20603 rev. A 01/99 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits

HFA04SD60S

Abstract: 72tj AN-994 IRFP250 HFA04SD60
Contextual Info: Preliminary Data Sheet PD-20617 03/99 HFA04SD60S HEXFRED TM Ultrafast, Soft Recovery Diode Features VR = 600 V K • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Q rr • Guaranteed Avalanche • Specified at Operating Conditions BASE

TRANSISTOR SMD MARKING CODE 2x

Abstract: smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD 2x t TRANSISTOR SMD MARKING CODE 42 HFA04TB60S IRFP250 transistor SMD code 10-t
Contextual Info: PD -20614 01/99 HFA04TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.8V Qrr * = 40nC (N/C) Benefits

AAAA series SMD transistor

Contextual Info: Bulletin PD -20602 rev. C 12/00 HFA06TB120S. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions K VR = 1200V BASE + 2 VF(typ.)* = 2.4V

smd TRANSISTOR code marking 2F

Abstract: TRANSISTOR SMD MARKING CODE X D TRANSISTOR SMD MARKING CODE 2.T transistor smd code marking tm om SMD CODE MARKING SMD Transistor Marking Code Nt TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD MARKING CODE RE 34 transistor SMD MARKING CODE HF
Contextual Info: PD -20602 rev. B 01/2000 HFA06TB120S. Series TM HEXFRED Ultrafast, Soft Recovery Diode Features BASE + 2 N/C Benefits VR = 1200V VF(typ.)* = 2.4V (K) • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche

smd TRANSISTOR code marking 2F

Abstract: TRANSISTOR SMD 2x t SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 2x N TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE DM HFA15TB60S IRFP250
Contextual Info: PD -20615 01/99 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits K VR = 600V BASE + 2 V F = 1.7V