K BAND LOW PHASE GAAS FET Search Results

NE71300

Abstract: NE71300L NE71300M NE71300N 0460 lg 8838
Contextual Info: LOW NOISE L TO K-BAND GaAs MESFET NE71300 • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF dB • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE DESCRIPTION

73E-12

Abstract: 20771 NE71300 NE71300L NE71300M NE71300N lg 8838 LS 7642
Contextual Info: LOW NOISE L TO K-BAND GaAs MESFET NE71300 3 24 • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz 2.5 21 Noise Figure, NF dB • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE

LTA 703 S

Abstract: EM 408 gps beta e 555
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:

NE800296

Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in

NE800296

Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in

2sc5066

Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

l8113

Abstract: integrated switch negative voltage generator 100Nf Pins l8113
Contextual Info: UTC L8113 LINEAR INTEGRATED CIRCUIT FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION DESCRIPTION The UTC L8113 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a

Contextual Info: UTC L8113 LINEAR INTEGRATED CIRCUIT FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION DESCRIPTION The UTC L8113 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER S pecifications are su b je ct to ch a n g e w ith o u t notice. PIN CONFIGURATION TOP VIEW DESCRIPTION T he M G F7170A C is a m onolithic m icrow ave integrated

Contextual Info: MITSUBISHI SEM ICO ND UC TO R <GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POW ER AM PLIFIER Specifications are subject to ch an g e w ithout notice. DESCRIPTION PIN CONFIGURATION TOP VIEW T h e M G F 7 1 6 9 C is a monolithic m icrow ave integrated

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
Contextual Info: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD

NE722S01

Abstract: nec 151 NE722S01-T1 NE722S01-T1B1 mesfet lnb k BAND LOW PHASE gaAs FET NEC Ga FET marking Rf
Contextual Info: NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 ± 0.2 • LOW NOISE/HIGH GAIN:

X band low noise

Abstract: mesfet lnb transistor GaAS marking 576 NE722S01 NE722S01-T1 NE722S01-T1B1 lnb schematic k BAND LOW PHASE gaAs FET nec gaas fet marking lg s12
Contextual Info: C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 – 0.2 • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

10GHz oscillator

Abstract: doppler radar circuit for speed sensing avantek HTO-4000 Avantek rf OSCILLATORS Avantek amplifier HTO 8 GHz VCO 10GHz OSCILLATOR pulse generator 8400 avantek avantek vto HTO4000
Contextual Info: Voltage-Controlled Oscillators Evaluated for System Design Application Note—M024 High tuning speed, small size, and low power consumption make VCOs important components in a number of microwave applications. The designer must be able to evaluate these devices

Contextual Info: ED R E S U ATU C FO E FE SU S I Gary Zhang, Sabah Khesbak, Anil Agarwal, and San Chin T he first official shift in communication systems from fixed-location devices to portable/mobile devices happened in 1973 when Martin Cooper, general manager of Motorola’s Communications Systems Division at the time, placed the first mobile call from a New

NE722S01

Abstract: NEC Ga FET marking A mesfet lnb NE722S01-T1 NE722S01-T1B1
Contextual Info: C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 – 0.2 • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz

10GHz oscillator

Abstract: HTO4000 VTO-8000 doppler radar circuit for speed sensing 8GHz oscillator VCO 10GHZ oscillator VTO-8400 f1rm HTO-4000
Contextual Info: Voltage-Controlled Oscillators Evaluated for System Design Application Note—M024 High tuning speed, small size, and low power consumption make VCOs important components in a number of microwave applications. The designer must be able to evaluate these devices

Fujitsu GaAs FET application note

Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Contextual Info: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was

TGF4250

Abstract: r02107 TGF4260 TGF4230 TGF4240 Design Seminar Signal Transmission ab 7614 Au Sn eutectic R0210
Contextual Info: APPLICATION NOTES: INTRODUCTION Designing High Efficiency Applifiers using HFETs HFET TriQuint Semiconductor has developed a range of Heterostructure FETs designed for power amplifier applications where high power-added efficiency is a key specification. They also offer the

atf-41435

Abstract: 99250 schematic diagram receiver data circuit satellite ATF-10235 5091-8823E
Contextual Info: Design of a 4 GHz LNA for a TVRO System Application Note A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is

atf-41435

Abstract: schematic diagram receiver satellite S2PB schematic diagram receiver data circuit satellite ATF-10235 AN-A002 tvro system in low power transmitter 2N2907 PNP Transistor to 92 2N2907 ATF10236
Contextual Info: Design of a 4 GHz LNA for a TVRO System Application Note AN A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is shown in

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