K T 315 Search Results

Contextual Info: X Ko nt ak t ano r d nu ng c o n t a c t arrangement 32 E i n l o t - K o n t a k t e 32 s o l d e r - c o n t a c t s 32 or 28 30 2k 20 22 26 El 16 12 U 18 8 10 1 k 6 El El El El El El El El El El El El El El El El El El El El El _a El Ei n l o t - K o n t a k t

Contextual Info: X Ko nt ak t ano r d nu ng c o n t a c t arrangement 32 E i n l o t - K o n t a k t e 32 s o l d e r - c o n t a c t s 32 or 28 30 24 26 20 22 16 12 14 18 8 10 l 2:1 k 6 El El El El El El El El El El El El El El El El El El El El El _a Ei n l o t - K o n t a k t

Contextual Info: X Ko nt ak t ano r d nu ng c o n t a c t arrangement l 2:1 32 E i n l o t - K o n t a k t e 32 s o l d e r - c o n t a c t s 32 or 28 30 24 26 20 22 16 18 12 U 8 10 k 6 El El El El El El El El El El El El El El El El El El 2 El _a El Ei n l o t - K o n t a k t

Contextual Info: X Ko nt ak t ano r d nu ng c o n t a c t arrangement l 2:1 32 E i n l b t - K o n t a k t e 32 s o l d e r - c o n t a c t s 32 or 28 30 24 26 20 22 16 18 12 U 8 10 k 6 El El El El El El El El El El El El El El El El El El El El 2 El _a El Ei n l o t - K o n t a k t

information applikation

Abstract: VEB mikroelektronik information applikation mikroelektronik mikroelektronik Heft 12 Mikroelektronik Information Applikation "Mikroelektronik" Heft mikroelektronik heft applikation heft mikroelektronik applikation a4100
Contextual Info: u Information Applikation rik K|D se o Fififlkif^ii \k i il •' n r i r Information Applikation H e f t 4 6 : L B I S T U H Q 3 B L E K T R 0 H I K Bipolarer Leist ungschalttransistor T e i l 2 v b h a l iW t T w r f c fm kf urfc/odr imvibliomhinit mlhrortBlurBiii

Contextual Info: s e MIKRO n SKiiP 362 GD 060 - 352 WT Absolute Maximum Ratings Symbol Values Units Operating DC link voltage T h e a ts in k —25 °C T h eatsin k = 25 °C; tp < 1 ms IGBT & Diode AC, 1 min. T heatsin k = 25 °C T heatsin k = 25 °C; tp < 1 ms tp = 10 ms; sin.; T j = 150 °C

eurosil

Abstract: ic tda 6108 tda 9351 SE116 BH 37 933 Eurosil Electronic tfk 635 EL131 TDA 785 LA
Contextual Info: Te m ic TELEFUN KEN Semiconductors Addresses Sales Offices Europe Hungary Sweden T E M IC D a n sk T EM 1C T E L E FU N K E N T E M IC T E L E F U N K E N T E M IC N o rd ic A B c /o A E G D a n s k A k tie s e ls k a b m ic ro e le c tro n ic ìm h H K r u p p s tr a s s e 6

BCD8

Abstract: 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS
Contextual Info: A Deep Trench Isolation integrated in a 0.13um BiCD process technology for analog power ICs. H. Kitahara, T. Tsukihara, M. Sakai, J. Morioka*, K. Deguchi*, K. Yonemura*, T. Kikuchi*, S. Onoue*, K. Shirai*, K. Watanabe* and K. Kimura*. Toshiba Semiconductor Company, 3500 Matsuoka, Oita, Oita, 870-0197, Japan,

Katalog tesla tranzistor

Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
Contextual Info: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA

information applikation

Abstract: information applikation mikroelektronik mikroelektronik Heft 12 Mikroelektronik Information Applikation mikroelektronik Heft A4100D "Mikroelektronik" Heft applikation heft mikroelektronik applikation VEB mikroelektronik
Contextual Info: m o N n ^ e le l-c te n o r iil-c Kp Information Applikation m L r r t l k < I r J[ S J E 2 l E l - < f c i r ,a r - | i t < Information Applikation H e f t : 40 L S - T T L - R e l h e Teil 1 ueb Halbleiterwerk frankfurt /oder* b o t r - ie b im v e t k o m b m a t m ik r o o le k t r o n « k

GS507

Abstract: Katalog tesla tranzistor Tesla katalog OC169 TRANZISTOR CATALOG GS506 156NU70 GS508 OC170 OC30 Tesla
Contextual Info: in t in t ili it t ilif germaniovvch tranzistorû T E IIA ROZNOV K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek

EL-1CL3H

Abstract: EL-315
Contextual Info: IHPKARED E M IT T IN G PIO D E G aA s EL-315 DIMENSIONS (Unit:m m ) E L - 3 1 5 « , «ÉH SB JI+ ItlS T i - .H* K S ih. *: S fctì * G a A s # f l t - K T'-fo » S U 'M T Ig i f g g f t o The EL-315 a high-power G a A s I R E D m ounted in a c le a r sid elo o k in g package,

3165* intel

Abstract: 82360SL intel 80386SL twc np 6001 28f200 tsop intel 28f200bx 28F002BX 28F002BX-B 28F002BX-T 28F200BX
Contextual Info: INTEL CORP HEHORY/PLD/ SbE D • 4fl2bl?b 007bBS3 flTb m i T L Z 0M lF K ß ! ilÄ T 0®If!!] in te l 'T W o 'K V ¿ k 28F200BX-T/B, 28F002BX-T/B 2 MBIT (128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B

Contextual Info: A lle Redite 20,32 ,27 -3 a> All rights mmed 2,54 x4=[10,16] s ,27 CM Vorbehalten/ $= 2,54 L n r- O sl P r in t e d board layout Compon en t s i d e L 01 1,27 J 1. Kon t a k t 2,54 1. K o n t a k t 1st contact 1st contact oil 1er c o n t a c t ^ holes i 00.05

valvo handbuch rohren

Abstract: VALVO Handbuch 6922 EH valvo E288CC E81L E180F VALVO GMBH E130L E186F
Contextual Info: VAIVO HANDBUCH S pezial-V erstärkerröhren 1970 S p e z ia l - V e r s tä r k e r r ö h r e n 1970 D a s V A L V O - H a n d b u c h ist v o r a lle m fü r K o n s tru k te u re und G e r ä t e e n t w ic k le r bestim m t. D a s H a n d b u c h g ib t k e in e A u s k u n ft ü b e r d ie L ie fe rm ö g lich k eit'

33 nec 125 t2

Abstract: AC10F dh 0734 AC10FGM AC10r AC10DGM AC10EGM AC10D
Contextual Info: T h y r is t o r s AC1ODGM.AC1OEGM.AC1 OFG M 10 A C 10r jG M m t m L v A ^E — ;P K T R IA C 10 A - 7 7 i '7 m ± t ± m v~6oo K TRIA CT", v ^ . f i : mm) t t . 10.5 M AX . 0 3.6 # 4.8 M AX . « o r - hhU K I , III, IV) T" 20 mA ^ —XCOtzishA'tfï&aX’h

K736

Abstract: K718 k736 transistor datasheet 433 315 MHz Power Amplifier TDK5100 Q62705-K721 TDK5100F printed antenna 868 434 mhz xtal oscillator Q62705-K735
Contextual Info: Product Brief TDK510x F Series 315/434/868 MHz, A S K / F S K Tra ns m i t t e r s ( -4 0 . . . + 1 25 ° C ) W i r e l e s s C o n t r o l – T h e T D K 5 1 0 x ( F ) f a m i l y is a group of single chip ASK/FSK transmitters for the frequency bands 311 – 317 MHZ, 433 – 435 MHz and 868 – 870 MHz. The IC offers a high

Contextual Info: 5 X K o n t a k t a n o r d n u n g / cont act arrangement 15 K o n t a k t e 15 cont act s 32 28 24 20 16 12 8 4 I 30 | 26 | 22 | 18 | U | 10 | 6 | l IX I ^ T^l ^ IX I T^l ^ ^ 1 I X I E^ 1 X I E^ 1 X I E X L o c h b i I d / board drillings z — d I 2: 1

Contextual Info: F-212 LSEM -120-06.0 -F -D V -A -N -K -T R LSEM-150-04.0 -F -D V -A -N -K -T R LSEM -120-01-L -D H -A -N -K -T R 0,80mm .0315" LSEM SERIES \ - HIGH SPEED HERMAPHRODITIC STRIP High Speed/High Density SPECIFICATIONS Mates with: LSEM Audible click when

gb120-315

Contextual Info: SEMIKRON SKiiP 632 GB 120 • 315 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1200 V IGBT & Inverse Diode V ces V cc 9> O perating DC link voltage lc T h e a t s in k T j 3> IG B T = 25 °C & Diode V is o l 4> AC, 1 mln. If T h e a t s in k

Contextual Info: • fll3fc. fc. 71 □□□5D31 310 S K iiP P A C K S K iiP 202 G D L 120 - 400 W T E/U A b s o lu te M a xim u m R a tin g s Values Units IGBT & Inve rse Diode V ces Operating D C link voltage V c c 10) T h e a tsin k = 25 °C lc T h e a tsin k — 25 °C; tp < 1 ms

"WF Berlin" srs 360

Abstract: SRS 4451 SRS551 SRS552 oszillografenrohren SRS360 SRS4451 Thyratron 5870 veb taschenbuch CV2131
Contextual Info: '* — ' . • â S P E Z IA L R O H R E N SPEZIALROHREN V E B W E R K F Ü R F E R N S E H E L E K T R O N IK . B E R L IN AUSGABE 1961 V V EB FU N K W ER K ERFU RT • T H Ü R IN G E N cjJlCo V E B P H Ö N IX R Ö N T G E N R O H R E N W E R K . R U D O L S T A D T

dot matrix 1157

Abstract: NJU6501 lm 2475 t 2295 a cl- 600 ir x-ts 640x200dot 640X200 NJU6501C LCD 640X200 lm 2025
Contextual Info: « T X -» "J K 8 • ffi h V * * 3 h ij ? i i ' K X L C D 7 - f ' < ¥ ■ *- » HJU6501 l i , F -y h v h ' fi -> ') T J l - X J j , 8 0 íü * = i K 7 'f /< T - » J U 6 5 1 1 £ '< 7 T i$ f f l l í t „ S fc x i - x < 64- 1 /2 5 6 £ T - H I s t * £ t 2 t ì > ± & m . < n V v

Katalog tesla tranzistor

Abstract: OC26 Tesla katalog GS507 156NU70 TESLA 102NU71 GF-50 OC30 Tesla 2NU74
Contextual Info: È o n s ìr n k É iii h i a l o j f germanìovych tranzistoru T E S L 4 R O Z N O V K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek