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    K18 DIODES Search Results

    K18 DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    K18 DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    209CmQ150

    Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
    Text: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78


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    PDF 10BQ100 10BQ015 10BQ040 10BQ060 30BQ100 30BQ015 30BQ040 30BQ060 209CmQ150 K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015

    Untitled

    Abstract: No abstract text available
    Text: 一華半導體股份有限公司 IR CONTROL MOSDESIGN SEMICONDUCTOR CORP. M21 22 IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能敘述 The M21(22) is a remote control transmitter ASIC for TV, VTR, etc. There are 65,536 customer codes setting by external diodes,


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    PDF PD6121/22

    Untitled

    Abstract: No abstract text available
    Text: 一華半導體股份有限公司 IR CONTROL MOSDESIGN SEMICONDUCTOR CORP. M21 22 IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能叙述 The M21(22) is a remote control transmitter ASIC for TV, VTR, etc. There are 65,536 customer codes setting by external diodes,


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    PDF PD6121/22

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


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    PDF BL301 BL301

    BL301

    Abstract: K558 Y460 ZNBT-60-1W
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT FREQ. RANGE MHz MODEL NO. fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


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    PDF BL301 BL301 K558 Y460 ZNBT-60-1W

    1gw 82

    Abstract: PBTC-1GW BL301 K558 Y460 ZNBT-60-1W
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT FREQ. RANGE MHz MODEL NO. fL-f U ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


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    PDF BL301 1gw 82 PBTC-1GW BL301 K558 Y460 ZNBT-60-1W

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES HIGH CURRENT 50Ω Surface Mount o 100 kHz to 6000 MHz JEBT MODEL NO. fL-fU ISOLATION*, dB CAPD DATA CASE STYLE RF-DC, RF&DC-DC (see RF/IF Designer handbook) Page Note B C O N N E C T I O N INSERTION LOSS*, dB FREQ. RANGE MHz L M U L M U Typ. Max.


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    PDF BL301 BL301

    BL301

    Abstract: K558 Y460 ZNBT-60-1W DSA0036977
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


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    PDF BL301 BL301 K558 Y460 ZNBT-60-1W DSA0036977

    1gw 75

    Abstract: JEBT-6G
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


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    PDF BL301 BL301 1gw 75 JEBT-6G

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES 50Ω Surface Mount o HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. fL-fU CAPD DATA ISOLATION*, dB INSERTION LOSS*, dB FREQ. RANGE MHz Note B C O N N E C T I O N BL301 BL301 hr hr 39.95 59.95 BL301 BL301 hr hr 59.95 69.95 CASE STYLE RF-DC, RF&DC-DC


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    PDF BL301 BL301

    RFDC

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G Note B C O N N E C T I O N — — — — — — BL301 BL301 hr hr 39.95 59.95 1.05 1.2 1.1 1.3 1.1 1.2 1.2 2.2 GU1041 GU1041


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    PDF BL301 BL301 TB-268 RFDC

    GU1041

    Abstract: 1gW 38
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


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    PDF BL301 BL301 TB-268 GU1041 1gW 38

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


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    PDF BL301 BL301 TB-268

    K18 diodes

    Abstract: TB268
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


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    PDF BL301 BL301 TB-268 K18 diodes TB268

    smd 58a transistor 6-pin

    Abstract: ISL75051SRH
    Text: 3A, Rad Hard, Positive, Ultra Low Dropout Regulator ISL75051SEH Features The ISL75051SEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. These devices operate over an input voltage range of 2.2V to 6.0V and are capable of providing


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    PDF ISL75051SEH ISL75051SEH 225mV 038mm) FN8294 smd 58a transistor 6-pin ISL75051SRH

    ISL75051SEHVFE

    Abstract: smd 58a transistor 6-pin ldr 3 pin metal package
    Text: 3A, Radiation Hardened, Positive, Ultra Low Dropout Regulator ISL75051SEH Features The ISL75051SEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. These devices operate over an input


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    PDF ISL75051SEH ISL75051SEH 225mV 038mm) FN8294 ISL75051SEHVFE smd 58a transistor 6-pin ldr 3 pin metal package

    ISL75051SEHVFE

    Abstract: ISL75051SEHVF 5962R1121202V9A
    Text: 3A, Rad Hard, Positive, Ultra Low Dropout Regulator ISL75051SEH Features The ISL75051SEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. These devices operate over an input voltage range of 2.2V to 6.0V and are capable of providing


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    PDF ISL75051SEH ISL75051SEH 225mV 038mm) FN8294 ISL75051SEHVFE ISL75051SEHVF 5962R1121202V9A

    5962R11212

    Abstract: No abstract text available
    Text: DATASHEET 3A, Radiation Hardened, Positive, Ultra Low Dropout Regulator ISL75051SEH Features The ISL75051SEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. These devices operate over an input


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    PDF ISL75051SEH ISL75051SEH 225mV 038mm) FN8294 5962R11212

    BZA100

    Abstract: SMD Diode KE 18-fold MBG393 MS-013AC S020 smd k7 diode
    Text: Philips Semiconductors Product specification 18-fold ESD transient voltage suppressor BZA100 FEATURES DESCRIPTION • S 0 2 0 SMD package allows 18 separate voltage regulator diodes in a common anode configuration 18-fold monolitic transient voltage suppressor. Its 18-fold junction


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    PDF 18-fold BZA100 OT163-1 MS-013AC BZA100 SMD Diode KE MBG393 MS-013AC S020 smd k7 diode

    1gw 75

    Abstract: HF 4093 N
    Text: Bias-Tee □ Mini-Circuits ZFBT ZFBT-FT 0.1 to 6000 MHz case style selection outline drawings see Table of Contents PBTC FREQ. MHz L MODEL NO. ZFBT-4R2G ZFBT-4R2G-FT ZFBT-6G ZFBT-6G-FT •fr ZFBT-4R2GW <• ZFBT-4R2GW-FT ■fr ZFBT-6GW 4- ZFBT-6GW-FT PBTC-1G


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    PDF 100mA 150mA 200mA 1gw 75 HF 4093 N

    R142.016.000 W

    Abstract: No abstract text available
    Text: B ias-T ees 50Q Surface Mount12 High Curren t TOO kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz ISOLATION* „ • (dB) (RF-bC, RF&DC-DC) INSERTION LOSS* (dB) M U Typ. M ax. Typ. M ax. Typ. Max. 0.6 0.7 1.2 1.4 0.6 1.3 0.6 0.7 1.2 1.4 0.6 1.3 JEBT-4R2G


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    PDF BL301 BL301 R142.016.000 W

    LC 7995

    Abstract: No abstract text available
    Text: Bias-Tees 50 Q Surface MountJ High Current 100 kHz to6000 MHz JEBT INSERTION LOSS*, dB FREQ. RANGE MHz MODEL NO. H CASE STYLE ISOLATION*, C» RF-DC, RF&DC-DC L M u L M u Typ. Max. Typ. Max. Typ. M ax. iy p . Min. Typ. Min. Typ . Min. Note B JEBT-4R2G JEBT-6G


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    PDF to6000 BL301 LC 7995

    20257

    Abstract: 203CNQ100
    Text: 1 I n t e r n a t io n a l R e c t if ie r PM Nuntfaor II Schottky Diodes 7 >F(AV)0Tc VfM*IFM A * (Veto) » te mJ (3) (7)tan fatodVmm Ur mA (Amp») Fw-on- •GW Mu l Tj •c Notes Dnnand Numbtr Cue Style, (Cm OuAm) (1) M od ul« « Center Tap 200CNQ035


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    PDF 200CNQ035 200CNQ040 200CNQ045 201CNQ035 201CNQ040 201CNQ045 201CNQ050 203CNQ080 203CNQ100 208CNQ060 20257

    PWR-8232X

    Abstract: No abstract text available
    Text: I L C DATA DEVICE CORP IDE D | 4^,7071^ □□QbDbS h D I PWR-82324 SERIES C ILC DATA DEVICE CORPORATION_ HIGH CURRENT H-BRIDGE WITH FLYBACK DIODES » - a s - 0 7 FEATURES •SMALL SIZE • HIGH CURRENT CAPABILITY DESCRIPTION The PWR-82324 Series are H-bridge


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    PDF PWR-82324 MIL-M-38510 MIL-STD-883C. PWR-8232X MIL-STD-883. MIL-STD-883