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    K2605 TOSHIBA Search Results

    K2605 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB6551FAG
    		Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Controller/Vout(V)=12/Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB6586FG
    		Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B006AFTG
    		Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB6552FNG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/2ch/Vout(V)=15/Iout(A)=1 Visit Toshiba Electronic Devices & Storage Corporation
    TB6640AFTG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=40/Iout(A)=3 Visit Toshiba Electronic Devices & Storage Corporation

    K2605 TOSHIBA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605
    Contextual Info: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original     		2SK2605 k2605 K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605 PDF

    K2605

    Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR
    Contextual Info: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2605 45oducts K2605 K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR PDF

    K2605

    Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA
    Contextual Info: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2605 K2605 K2605 transistor 2SK2605 K2605 TOSHIBA PDF

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605
    Contextual Info: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : |Yfs| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current


    Original     		2SK2605 k2605 K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605 PDF