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    K2613 TOSHIBA Search Results

    K2613 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR3DG28
    		Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA
    		Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TK2R4A08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    K2613 TOSHIBA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K2613

    Abstract: toshiba k2613 2SK2613
    Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) · High forward transfer admittance: ïYfsï = 6.0 S (typ.)


    Original     		2SK2613 K2613 toshiba k2613 2SK2613 PDF

    toshiba k2613

    Abstract: K2613 2SK2613
    Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: Yfs = 6.0 S (typ.)


    Original     		2SK2613 toshiba k2613 K2613 2SK2613 PDF

    toshiba k2613

    Abstract: K2613
    Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 toshiba k2613 K2613 PDF

    2SK2613

    Abstract: k2613 toshiba k2613 K2613 TOSHIBA K261
    Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 2SK2613 k2613 toshiba k2613 K2613 TOSHIBA K261 PDF

    toshiba k2613

    Abstract: K2613 K2613 TOSHIBA 2SK2613
    Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 toshiba k2613 K2613 K2613 TOSHIBA 2SK2613 PDF

    Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 PDF

    K2613

    Abstract: toshiba k2613 2SK2613
    Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 910lled K2613 toshiba k2613 2SK2613 PDF

    toshiba k2613

    Abstract: 2SK2613 K2613
    Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 910lled toshiba k2613 2SK2613 K2613 PDF

    Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Unit: mm (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		2SK2613 PDF

    toshiba k2613

    Abstract: K2613 2SK2613 SC-65
    Contextual Info: 2SK2613 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSIII 2SK2613 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 特 単位: mm 長 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		2SK2613 2-16C1B SC-65 toshiba k2613 K2613 2SK2613 SC-65 PDF