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    K3265 TRANSISTOR RELEVANT Search Results

    K3265 TRANSISTOR RELEVANT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K3265 TRANSISTOR RELEVANT Datasheets Context Search

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    Abstract: K3265 Transistor K3265 Transistor relevant K3265 DATASHEET 2SK3265
    Text: 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIV 2SK3265 Chopper Regulators DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK3265 k3265 K3265 Transistor K3265 Transistor relevant K3265 DATASHEET 2SK3265