K4E640811D Search Results

K4E640811D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
K4E640811D		Samsung Electronics	8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet		Original	PDF	422.18KB	21

K4E640811D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K4E640811D Abstract: K4E660811D Contextual Info: K4E660811D,K4E640811D CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.	Original	K4E660811D K4E640811D K4E660811D-JC 400mil K4E640811D	PDF

Catalog Datasheet

Type

Document Tags

PDF

K4E640811D

Abstract: K4E660811D
Contextual Info: K4E660811D,K4E640811D CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

Original

K4E660811D K4E640811D K4E660811D-JC 400mil K4E640811D

PDF