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    K4S280432M Search Results

    K4S280432M Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S280432M Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S280432M-TC/L10 Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). Original PDF
    K4S280432M-TC/L1H Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). Original PDF
    K4S280432M-TC/L1L Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). Original PDF
    K4S280432M-TC/L80 Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). Original PDF

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    K4S280432M

    Abstract: No abstract text available
    Text: K4S280432M CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432M CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S280432M 128Mbit K4S280432M A10/AP

    CDC2509

    Abstract: M377S3320MT3-C1H M377S3320MT3-C1L MA2180
    Text: M377S3320MT3 PC100 Registered DIMM M377S3320MT3 SDRAM DIMM Intel 1.2 ver Base 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S3320MT3 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S3320MT3 consists of eighteen CMOS 32Mx4 bit


    Original     		PDF M377S3320MT3 PC100 M377S3320MT3 32Mx72 32Mx4, 32Mx4 400mil 18bits CDC2509 M377S3320MT3-C1H M377S3320MT3-C1L MA2180