K6F8016 Search Results

K6F8016R6C

Contextual Info: K6F8016R6C Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft February 7, 2003 Preliminary 1.0 Finalize July 3, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6F8016U6C

Contextual Info: Preliminary CMOS SRAM K6F8016U6C Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark May 1, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6F8016R6A-EF70

Contextual Info: K6F8016R6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 21, 2000 Preliminary 0.1 Revise - Change package type from FBGA to TBGA

K6F8016U3A-TB55

Abstract: K6F8016U3A-RB55 K6F8016u3a
Contextual Info: K6F8016U3A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft December 11, 2000 Preliminary 1.0 Finalize - Isb1 change : 25µA to 15µA

Contextual Info: Preliminary CMOS SRAM K6F8016U6B Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 24, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6F8016R6D

Abstract: K6F8016R6D-F
Contextual Info: Preliminary CMOS SRAM K6F8016R6D Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft April 26, 2004 Preliminary 0.1 Revised - Updated DC parameters ICC1, ICC2, ISB1, IDR

K6F8016V6M_FF55

Abstract: k6f8016v6
Contextual Info: K6F8016V6M Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 23, 1999 Preliminary 1.0 Finalized - Errata correction - Change for tWHZ : 25 to 20 for 70ns product.

K6F8016U3M

Contextual Info: K6F8016U3M Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 23, 1999 Preliminary 1.0 Finalized - Errata correction - Change for tWHZ : 25 to 20ns for 70ns product.

Contextual Info: K6F8016V6M Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 23, 1999 Preliminary 1.0 Finalized - Errata correction - Change for tWHZ : 25 to 20 for 70ns product.

K6F8016R6M

Contextual Info: K6F8016R6M Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 30, 1999 Preliminary 1.0 Finalized - Errata correction - Change for tWHZ : 25 to 20ns for 70ns product.

K6F8016R6M

Abstract: K6F8016R6M-F
Contextual Info: K6F8016R6M Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 30, 1999 Preliminary 1.0 Finalized - Errata correction - Change for tWHZ : 25 to 20ns for 70ns product.

K6F8016R6B

Abstract: K6F8016R6B-F
Contextual Info: Preliminary CMOS SRAM K6F8016R6B Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 25, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: K6F8016S6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 14, 2000 Preliminary 0.1 Revise - Change package type from FBGA to TBGA

Contextual Info: Preliminary CMOS SRAM K6F8016U6D Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft April 26, 2004 Preliminary 0.1 Revised - Updated DC parameters ICC1, ICC2, ISB1, IDR

K6F8016U3A-TF55

Abstract: K6F8016U3A
Contextual Info: K6F8016U3A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark December 11, 2000 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6F8016V3M

Abstract: K6F8016V3M-TF55 K6F8016V3MTF55
Contextual Info: K6F8016V3M Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 23, 1999 Preliminary 1.0 Finalized - Errata correction - Change for tWHZ : 25 to 20ns for 70ns product.

K6F8016U6M

Contextual Info: K6F8016U6M Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft June 23, 1999 Advance 1.0 Finalized - Errata correction - Change for tWHZ : 25 to 20ns for 70ns product.

K6F8016U3

Contextual Info: K6F8016U3M Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 23, 1999 Preliminary 1.0 Finalized - Errata correction - Change for tWHZ : 25 to 20ns for 70ns product.

K6F8016V3A-TF55

Abstract: K6F8016V3A-TF70
Contextual Info: K6F8016V3A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft -Design Target July 4, 2001 Preliminary 1.0 Finalize September 26, 2001 Final

K6F8016U6D-XF70

Abstract: K6F8016U6D
Contextual Info: CMOS SRAM K6F8016U6D Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft April 26, 2004 Preliminary 0.1 Revised - Updated DC parameters ICC1, ICC2, ISB1, IDR

Contextual Info: K6F8016S6B Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 24, 2001 Preliminary 1.0 Finalize - ISB1 change : 15µA to 10µA October 24, 2001

CS-102

Abstract: K6F8016T6C
Contextual Info: Preliminary CMOS SRAM K6F8016T6C Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 30, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6F8016U6B-EF70

Abstract: K6F8016U6B-EF55 K6F8016U6B
Contextual Info: CMOS SRAM K6F8016U6B Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 24, 2001 Preliminary 1.0 Finalize - ICC2 change : 30mA to 28mA for 55ns product

K6F8016R6D

Abstract: K6F8016R6D-F
Contextual Info: K6F8016R6D Family CMOS SRAM 8Mb 512K x 16 bit Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.